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Featured researches published by Mitsunori Yokoyama.


Journal of Crystal Growth | 1989

Flux growth of perovskite-type La2/3TiO3-x crystals

Mitsunori Yokoyama; Toshitaka Ota; Iwao Yamai; Junichi Takahashi

Crystals of perovskite-type lanthanum titanate La2/3TiO3-x were grown from a flux of the system KF-Na2B4O7. Cubic crystals were obtained above 1000°C and tetragonal crystals were obtained below 950°C. Oxygen deficiency seemed to be not so much a problem as has been reported for powdered sample. Growth conditions, X-ray diffraction analysis, crystal morphology and dielectric properties are described.


Journal of Crystal Growth | 1984

Vapor phase growth of titania whiskers by hydrolysis of titanium flouride

Toshitaka Oota; Iwao Yamai; Mitsunori Yokoyama

Abstract The chemical vapor deposition of TiO 2 crystals from the system TiF 4 −H 2 O was studied at elevated temperatures. When Na 2 TiF 6 was used as a TiF 4 source, rutile-type TiO 2 needles grew to 30 mm in length in a comparatively short time over the melt in a platinum crucible in air. The needles were mostly skeletal or twinned intergrowths of acicular crystals. Rutile gradually changed to Na 2 Ti 6 O 13 by the reaction with NaF and moisture in the air. The formation of Na 2 Ti 6 O 13 was inhibited by addition of TiO 2 to the raw material. The rutile whiskers were grown under controlled conditions by means of a flow method from the system Na 2 TiF 6 −TiO 2 −H 2 O. The needles or whiskers were found to grow preferentially in the [001] direction.


Journal of Crystal Growth | 1989

Flux growth of rare-earth stabilized zirconia and hafnia crystals

Mitsunori Yokoyama; Toshitaka Ota; Iwao Yamai

Abstract Crystals of zirconia and hafnia stabilized with rare-earth oxides (Nd 2 O 3 , Sm 2 O 3 , Gd 2 O 3 , Dy 2 O 3 , Er 2 O 3 , Yb 2 O 3 ) were grown from a flux of the system KF - Na 2 B 4 O 7 . Flourite-type or pyrochlore-type crystals were obtained according to the kind of rare-earth oxide doped. The rare-earth oxide content in the grown crystal was estimated by precision lattice parameter measurement. Crystal morphology and growth process are described.


Journal of Crystal Growth | 1986

Flux growth of yttria-stabilized zirconia crystals

Mitsunori Yokoyama; Toshitaka Ota; Iwao Yamai

Abstract Flux growth of stabilized zirconia single crystals is reported. Among some conventional stabilizers, only yttria formed a cubic zirconia solid solution. Various fluxes previously employed to grow monoclinic zirconia crystals were investigated. The system KF-Na 2 B 4 O 7 proved to be suitable for crystal growth of an yttria-stabilized zirconia solid solution. Starting compositions and growth conditions for the KF-Na 2 B 4 O 7 system are reported.


Journal of Crystal Growth | 1984

Vapor phase growth of fibrous potassium titanates from fluorine containing melts

Mitsunori Yokoyama; Toshitaka Oota; Iwao Yamai

Abstract Fibrous crystals of K 2 Ti 6 O 13 and K 2 Ti 4 O 9 were grown from the vapor phase by the reaction of K 2 TiF 6 or KF -TiO 2 mixture with moisture at elevated temperature. K 2 Ti 6 O 13 fibers and a small amount of rutile needles were grown with K 2 TiF 6 as the starting material. The deposition of the rutile phase was considered to relate to the vapor pressure of water. Fine fibers of K 2 Ti 4 O 9 were grown from KF-TiO 2 as the starting material. In order to obtain K 2 Ti 6 O 13 crystals from KF-TiO 2 mixture, it was necessary to prevent an evaporation of excess KF.


ieee international symposium on compound semiconductors | 1998

GaAs surface passivation with MBE grown GaS thin film

Naoya Okamoto; Naoki Hara; Mitsunori Yokoyama; Hitoshi Tanaka

We report on the successful GaAs surface passivation with GaS thin film grown by MBE employing the single precursor, tertiarybutyl-gallium sulfide-cubane ([(t-Bu)GaS]/sub 4/). GaAs bandgap PL intensity increased by passivating with GaS and has been maintained for a year. Furthermore, we investigated the relationship between the interface state density and the GaAs surface reconstruction before GaS passivation. The PL intensity for c(4/spl times/4)As was largest among the surface reconstructions investigated. Also, a minimum interface state density as low as 5/spl times/10/sup 10/ eV/sup -1/ cm/sup -2/ was obtained for an Al/GaS/n-GaAs MIS structure of c(4/spl times/4)As. In addition, we demonstrated the feasibility of GaS passivation for device applications.


Journal of Crystal Growth | 1990

Flux growth of some rare-earth titanate crystals

Mitsunori Yokoyama; Toshitaka Ota; Iwao Yamai; J. Takahashi

Rare-earth titanate crystals of perovskite-type R2/3TiO3-x (R = Nd, Sm and Gd) and pyrochlore-type R2Ti2O7 (R = Dy, Er and Yb) have been grown from a flux in the system KF-Na2B4O7. The crystal forms corresponded to each crystal symmetry. XRD analysis showed that perovskite-type R2/2TiO3-x has cubic, tetragonal or orthorhombic modifications according to the growth conditions. The lattice parameters have been determined by precision XRD measurements.


Journal of Crystal Growth | 1986

Vapor phase growth of stabilized zirconia crystals by hydrolysis of zirconium fluoride

Mitsunori Yokoyama; Toshitaka Ota; Iwao Yamai

Abstract The vapor phase growth of ZrO2 crystals by the hydrolysis of ZrF4 gas at elevated temperatures is reported. A suitable ZrF4 vaporization rate for crystal growth was obtained with a starting melt containing ZrF4 and alkalifluoride. Stabilized cubic ZrO2 crystals were grown by adding Y2O3 to the melt. The crystal faces were well developed under low water vapor pressures.


Archive | 1998

Compound semiconductor device having a reduced source resistance

Mitsunori Yokoyama; Hitoshi Tanaka; Jun Wada


Archive | 2006

Semiconductor device, method of manufacturing the same, and substrate for manufacturing the same

Mitsunori Yokoyama; Kenji Imanishi; Toshihide Kikkawa

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Iwao Yamai

Nagoya Institute of Technology

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Toshitaka Ota

Nagoya Institute of Technology

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Toshitaka Oota

Nagoya Institute of Technology

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J. Takahashi

Nagoya Institute of Technology

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Junichi Takahashi

Nagoya Institute of Technology

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