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Featured researches published by Mitsuo Kasori.


Journal of The European Ceramic Society | 1995

Thermal conductivity improvement of YAG added A1N ceramics in the grain boundary elimination process

Mitsuo Kasori; Fumio Ueno

Abstract The primary cause of the thermal conductivity improvement in Y 2 O 3 -containing AlN ceramics caused by elimination of the grain boundary phase was investigated. Y 3 Al 5 O 12 (YAG)-containing AlN powder compacts were sufficiently densified by firing at 1800 °C for 30 min, but had low thermal conductivity (90–110 Wm −1 K −1 ). Improvement to 245 Wm −1 K −1 and elimination of the grain boundary phases was brought about by annealing in a carbo-reductive atmosphere at 1850 °C for up to 100 h. During annealing, YAlO 3 , Y 4 Al 2 O 9 and Y 2 O 3 appeared as a result of the reduction-nitridation of the Al 2 O 3 constituent in the YAG. Subsequently, these yttrium rich phases acted as oxygen getters for the dissolved Al 2 O 3 which was originally included in the AlN grains. The Al 2 O 3 continuously changed into AlN by reduction-nitridation. The cyclic oxygen removal from the AlN through the grain boundary phase composition change is seen as the primary cause for the thermal conductivity improvement.


Archive | 1985

Circuit substrate having high thermal conductivity

Nobuo Iwase; Kazuo Anzai; Kazuo Shinozaki; Akihiko Tsuge; Kazutaka Saitoh; Kiyoshi Iyogi; Noboru Sato; Mitsuo Kasori


Archive | 1992

Method of manufacturing circuit board and circuit board itself manufactured by said method

Fumio Ueno; Mitsuo Kasori; Yoshiko Goto; Akihiro Horiguchi


Archive | 1988

AlN sintered body having high thermal conductivity and a method of fabricating the same

Akihiro Horiguchi; Fumio Ueno; Mitsuo Kasori; Yoshiko Sato; Masaru Hayashi; Hiroshi Endo; Kazuo Shinozaki; Akihiko Tsuge


Archive | 1988

Production of sintered aluminum nitride having high thermal conductivity

Akihiro Horiguchi; Mitsuo Kasori; Yoshiko Sato; Akihiko Tsuge; Fumio Ueno


Archive | 1996

High thermal conductivity silicon nitride circuit substrate and semiconductor device using the same

Hiroyasu Sumino; Akihiro Horiguchi; Mitsuo Kasori; Fumio Ueno


Archive | 1998

Silicon nitride circuit substrate and semiconductor device containing same

Hiroyasu Sumino; Akihiro Horiguchi; Mitsuo Kasori; Fumio Ueno


Archive | 2003

Aluminum negative electrode battery

Hidesato Saruwatari; Haruchika Ishii; Takahiro Hirai; Norio Takami; Mitsuo Kasori


Journal of the American Ceramic Society | 1994

Effects of Transition‐Metal Additions on the Properties of AlN

Mitsuo Kasori; Fumio Ueno; Akihiko Tsuge


Archive | 1985

Manufacture of aluminum nitride

Mitsuo Kasori; Kazuo Shinozaki; Kazuo Anzai; Akihiko Tsuge

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