Miyoshi Yokura

Peculiar Electrical and Magnetic Properties of La(Ba)MnO3 Thin Films

Tamio Endo, Kenichi Uehara, Tatsuya Yoshii, Miyoshi Yokura, Hong Zhu, Josep Nogues, Jose Colino, Kazuhiro Endo 1) Graduate School of Engineering, Mie University, Tsu, Mie 514-8507, JAPAN Fax: 81-59-231-9409, e-mail: endo@elec.mie-u.ac.jp 2) Kawamura Sangyo CO., LTD, Yokkaichi, Mie 512-8052, JAPAN 3) Department of Physics, University of Science and Technology of China, Hefei, Anhui, 230026, CHINA 4) Centre d’Investigació en Nanociència i Nanotecnologia (ICN-CSIC), Edifici CM7, Campus Universitat Autònoma de Barcelona, 08193 Bellaterra, SPAIN 5) Instituto de Nanociencia y Nanotecnologia, Universidad de Castilla-La Mancha, 45071 Toledo, SPAIN 6) The Research Laboratory for Integrated Technological Systems, Kanazawa Institute of Technology, Hakusan, Ishikawa 924-0838, JAPAN

Double-layer fabrication of cubic-manganites/hexagonal-ZnO on various substrates by ion beam sputtering, and variable electrical property

Hetero double-layers of LaBaMnO3 (LBMO)/ZnO were fabricated by ion beam sputtering on substrates of MgO, sapphire (SP), LaAlO3 (LAO), and SrTiO3 (STO). All the surfaces of substrates, ZnO and LBMO have step-terrace morphology. The p-LBMO/n-ZnO/SP shows junction rectification at different temperatures. The junction resistance follows from colossal magnetoresistance (CMR) of LBMO based on DEC model. The different LBMO/ZnO junctions on the different substrates show different junction behaviors at room temperatures. LBMO/ZnO/STO has the largest rectification factor of 210. After running measurement currents, LBMO/ZnO/STO shows current?voltage (I?V) switchings. LBMO/ZnO/MgO shows very clear switching and large hysteresis between upward and downward voltage sweeps. These are interpreted by CMR and DEC model, and phase separation. The switching is caused by disconnection of percolation path consisting of ferromagnetic metallic grains. The higher resistant state cannot be quickly transformed back to the lower resistant state during the downward sweep.

Evolution of I-V Characteristics and Photo Effects of Heterojunction LBMO/ZnO Prepared by IBS

The hetero p-n junctions of LBMO/ZnO were fabricated by ion beam sputtering. The sample shows clear temperature-dependent rectifying current (I)-voltage (V) characteristics, and junction resistance vs temperature curve is reflected by the CMR nature based on DEC model. The sample shows two-step switching, then the I-V is composed of very-low-resistance (VLR), low-resistance (LR) and high-resistance (HR) regions. The whole I-V behavior is changed by measurement running current. The switching is caused by the spot current, and the original VLR is restored when the current is reduced. The mechanism of switching is proposed in terms of the percolation paths composed of metallic FM-grains. Photo illumination effect on the I-V was investigated. The currents are increased in VLR and HR regions by the illumination. Two origins are possible, electronic process due to hole injection, and phase process. The percolation path might be reinforced by the light.

Long Lifetime of Plasma Effect on Bonding of Poly(ethylene terephthalate) Films and Surface Analyses

Poly(ethylene terephthalate) (PET) films can be bonded directly by oxygen plasma irradiation and heat press at low temperatures of 100–160 °C. The irradiated films were kept in the atmosphere for six years, yet they can be bonded tightly. The irradiated surface is extremely active just after the irradiation, and it is considerably active after five years. Dry- and wet-peel tests suggest hydrogen bonding and chemical bonding. The films are bonded by these two elements at lower press temperatures, while by the pure chemical bonding at higher temperatures. Fourier transform infrared spectroscopy (FTIR) results on the non-irradiated, irradiated and bonded samples indicate that OH and COOH groups are created at the surface, they are responsible for the both bondings. Dehydrated condensation reaction is proposed for the chemical bonding. The hydrogen bonding is broken by water penetration, causing smaller peel strength under the wet-peel test. Cross-linking layer may be the origin for the long lifetime.

Water adsorption and desorption on plasma-activated PET film surface, indication of hydrogen bonding

A plasma-irradiated poly(ethylene terephthalate) (PET) film has a long lifetime of bonding capability. To clarify its origin, a PET film was irradiated with oxygen plasma. It was then exposed to normal atmosphere including water vapor. FTIR absorption on the irradiated and non-irradiated films was measured at different times after the start of evacuation. The irradiated film has a larger amount of OH than the non irradiated film, and OH is generated on the film surface. The irradiated film has a larger amount of adsorbed water, because the surface is activated by the created OH. The adsorbed water is desorbed rapidly with increasing evacuation time in the non irradiated film, but it is desorbed more gradually in the irradiated film. Water has hydrogen bonds with OH; thus, the water desorption is suppressed. The OH absorption band is shifted to the lower wave number side owing to the hydrogen bonds. The irradiated surface may be protected by the water from the atmosphere.

Hetero-epitaxial Growth of Cubic La(Sr)MnO3 on Hexagonal ZnO, In-Plane Orientations of La(Sr)MnO3 (001), (110), and (111) Phases

Hexagonal ZnO was grown on a hexagonal (001) sapphire substrate. Then cubic La(Sr)MnO3 (LSMO) was grown on a ZnO underlayer by ion beam sputtering at various substrate temperatures to obtain double-layers of LSMO/ZnO and to investigate hetero-epitaxial orientation growth. Out-of-plane (001)-oriented ZnO was grown with an in-plane orientation of [100](001)ZnO ∥ [110](001)sapphire (B-mode). Three phases of LSMO with out-of-plane (001), (110), and (111) orientations were grown on (001) ZnO generally. However, each single phase of LSMO could be grown only by controlling the deposition conditions. We achieved the in-plane orientation growth of LSMO, [110](001)LSMO ∥ [100](001)ZnO (B-mode), [10](110)LSMO ∥ [100](001)ZnO (A-mode), and [10](111)LSMO ∥ [110](001)ZnO (B-mode). The A-mode is defined as the mode in which both in-plane fundamental axes are parallel. The B-mode entails no parallel axes. The LSMO(001)- and (110)-grains have three equivalent in-plane domains, and the LSMO(111)-grain has a single domain. Lattice matching calculation can be used to partially interpret the orientation growth.