Mizuaki Suzuki

Low-Temperature Synthesis of Aluminium Nitride Film by HCD-Type Ion Plating

Aluminium nitride (AlN) thin films were deposited on glass substrates, using aluminium and nitrogen as source materials, by hollow cathode discharge (HCD)-type ion plating. The films were evaluated using X-ray diffraction, scanning electron microscopy, infrared transmission spectroscopy and Auger electron spectroscopy, and their densities were measured. The phase of the deposits changed from Al to Al+AlN and to AlN with an increase in nitrogen flow rate. The structure of the AlN films varied from a dense structure to columnar structure with a rise in nitrogen flow rate. The film with the dense structure had a density near the theoretical value. Oxygen caused by the attack of H2O in air was detected only on the surface of films with the dense structure, but throughout the inside of the films with the columnar structure.

Effect of RF Bias on Low-Temperature Synthesis of Aluminium Nitride Film by Hollow Cathode Discharge-Type Ion Plating

The effects of RF bias potential on the synthesis of aluminium nitride (AlN) film on a glass substrate using the hollow cathode discharge (HCD) ion plating technique, and on some properties of the film were investigated. The deposits were characterized by X-ray diffraction and scanning electron microscopy. The AlN films prepared with application of RF bias potential were superior in flatness to those prepared without applying of RF bias potential, but excess RF bias voltage to the substrate caused the film to come off not just from the substrate, but also with peeling of the glass substrate surface. The Vickers microhardness of film consisting of AlN single phase was estimated to be about 2300 kg/mm2. The film density was increased by applying RF bias voltage, its value being close to the theoretical value.