Mohamed Ismaeel Maricar

Experimentally estimated dead space for GaAs and InP based planar Gunn diodes

An experimental method has been used to estimate the dead space of planar Gunn diodes which were fabricated using GaAs and InP based materials, respectively. The experimental results indicate that the dead space was approximately 0.23 μm and the saturation domain velocity 0.96 × 105 m s−1 for an Al0.23Ga0.77As based device, while for an In0.53Ga0.47As based device, the dead space was approximately 0.21 μm and the saturation domain velocity 1.93 × 105 m s−1. Further, the results suggest that the saturation domain velocity is reduced or there is an increase in the dead-space due to local field distortions when the active channel length of the planar Gunn diode is less than 1 micron.

Non-interfering channels in a near-field MIMO communication

Realization of a non-interfering and equally strong multi-channel MIMO communication in the near-field regime is presented. This is achieved by introducing decoupling and matching networks that optimize the transmitted power. A demonstration of such communication is given for by a simple 2×2 MIMO configuration whose transfer matrix is obtained from full-wave electromagnetic simulations.

Towards near-field dense MIMO communications

An application of a decoupling and power matching scheme for near-field MIMO communication using arrays of dipole antenna beyond the 2×2 case is demonstrated. The application of the decoupling and power matching procedure introduces intermediary networks between the generator and the receiver load to allow the creation of strong (non-interfering) channels. Implementing these networks leads to an increase in the channel communication capacity. The methodology described in this paper is important step towards the realisation of wireless interconnects for chip-to-chip communication.