Mohamed N. Darwish
Christiana Care Health System
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Publication
Featured researches published by Mohamed N. Darwish.
international symposium on power semiconductor devices and ic s | 2003
Mohamed N. Darwish; Christina Yue; Kam Hong Lui; Frederik P. Giles; Ben Chan; Kuo-In Chen; Deva Pattanayak; Qufei Chen; Kyle Terrill; King Owyang
A new power Trench MOSFET with W-shaped gate structure (WMOSFET) that demonstrates a significant reduction in gate-drain charge Qgd, a low on-resistance, and good production process margin is reported. The gate is formed using a thicker oxide at the bottom of the trench that is self-aligned to the P-body/N-epi junction. Fabricated 35 V N-channel devices exhibit a Rdson*Qgd Figure of Merit of 12.5 m/spl Omega/.nC with V/sub GS/=10V and V/sub DD/=15V. Experimental data of devices fabricated using LOCOS and Sub Atmospheric CVD (SACVD) processes to form the thicker oxide layer along with simulation results are presented.
Archive | 2002
Mohamed N. Darwish; Kyle Terrill; Jainhai Qi
Archive | 2005
Mohamed N. Darwish; Kyle Terrill; Jainhai Qi; Qufei Chen
Archive | 2005
Mohamed N. Darwish; Kyle Terrill; Jainhai Qi; Qufei Chen
Archive | 2001
Mohamed N. Darwish; Frederick P. Giles; Kam Hong Lui; Kuo-In Chen; Kyle Terrill
Archive | 2002
Karl Lichtenberger; Frederick P. Giles; Christiana Yue; Kyle Terrill; Mohamed N. Darwish; Deva Pattanayak; Kam Hong Lui; Robert Xu; Kuo-In Chen
Archive | 2002
Ben Chan; Kam Hong Lui; Christiana Yue; Ronald Wong; David Chang; Frederick P. Giles; Kyle Terrill; Mohamed N. Darwish; Deva Pattanayak; Robert Xu; Kuo-In Chen
Archive | 2002
Mohamed N. Darwish; Christiana Yue; Frederick P. Giles; Kam Hong Lui; Kuo-In Chen; Kyle Terrill; Deva Pattanayak
Archive | 2002
Mohamed N. Darwish; Frederick P. Giles; Kam Hong Lui; Kuo-In Chen; Kyle Terrill
Archive | 2002
Christiana Yue; Mohamed N. Darwish; Frederick P. Giles; Kam Hong Lui; Kuo-In Chen; Kyle Terrill; Deva Pattanayak
