Mohammad Ghaffari
Bilkent University
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Publication
Featured researches published by Mohammad Ghaffari.
IEEE Electron Device Letters | 2012
Feyza B. Oruc; Furkan Cimen; Ayman Rizk; Mohammad Ghaffari; Ammar Nayfeh; Ali K. Okyay
A thin-film ZnO-based single-transistor memory cell with a gate stack deposited in a single atomic layer deposition step is demonstrated. Thin-film ZnO is used as channel material and charge-trapping layer for the first time. The extracted mobility and subthreshold slope of the thin-film device are 23 cm2/V·s and 720 mV/dec, respectively. The memory effect is verified by a 2.35-V hysteresis in the Idrain- Vgate curve. Physics-based TCAD simulations show very good agreement with the experimental results providing insight to the charge-trapping physics.
Materials & Design | 2013
Morteza Alizadeh; Hossein Akbari beni; Mohammad Ghaffari; Rasool Amini
Electrochimica Acta | 2012
Mohammad Ghaffari; M. Burak Cosar; Halil Ibrahim Yavuz; Macit Ozenbas; Ali K. Okyay
Composites Part B-engineering | 2014
Hossein Akbari beni; Morteza Alizadeh; Mohammad Ghaffari; Rasool Amini
Materials Characterization | 2012
E. Ganjeh; H. Sarkhosh; M.E. Bajgholi; H. Khorsand; Mohammad Ghaffari
Materials & Design | 2012
E. Ganjeh; H. Sarkhosh; H. Khorsand; H. Sabet; E.H. Dehkordi; Mohammad Ghaffari
Materials & Design | 2014
Fatemeh Alijani; Rasool Amini; Mohammad Ghaffari; Morteza Alizadeh; Ali K. Okyay
Journal of Alloys and Compounds | 2013
M. Mojtahedi; M. Goodarzi; M.R. Aboutalebi; Mohammad Ghaffari; V. Soleimanian
Ceramics International | 2013
Morteza Alizadeh; Hamed Ahmadi Ardakani; Rasool Amini; Mohammad Reza Ghazanfari; Mohammad Ghaffari
Materials Letters | 2012
Morteza Ghadimi; Ali Shokuhfar; Hamid Reza Rostami; Mohammad Ghaffari
