Mohammad Khaled Shakfa

Evolution of multi-mode operation in vertical-external-cavity surface-emitting lasers

The longitudinal multi-mode emission in a vertical-external-cavity surface-emitting laser is investigated using both single shot streak camera measurements and interferometric measurement techniques. For this, the laser is operated in the single- and two-color emission regime using both an etalon and a free-running configuration without etalon, respectively. The laser emission is analyzed with respect to pump power and output coupling losses for a long and for a short resonator. We observe a steep increase of emission bandwidth close to the laser threshold and monitor the transition between longitudinal single- and multi-mode operation. Additionally, the results indicate that a stable two-color operation is related to a sufficiently high number of oscillating longitudinal modes within each color.

Quantitative study of localization effects and recombination dynamics in GaAsBi/GaAs single quantum wells

Localization effects on the optical properties of GaAs1−xBix/GaAs single quantum wells (SQWs), with Bi contents ranging from x = 1.1% to 6.0%, are investigated using continuous-wave and time-resolved photoluminescence. The temperature- and excitation density dependence of the PL spectra are systematically studied, and the carrier recombination mechanisms are analyzed. At low temperatures, the time-integrated PL emission is dominated by the recombination of localized electron-hole pairs due to the varying content and clustering of Bi in the alloy. The extracted energy scales fluctuate tremendously when the Bi content is varied with a weak tendency to increase with Bi content. Relatively low energy scales are found for the SQW with x = 5.5%, which makes it a potential candidate for long-wavelength optoelectronic devices.

Time-dynamics of the two-color emission from vertical-external-cavity surface-emitting lasers

The temporal stability of a two-color vertical-external-cavity surface-emitting laser is studied using single-shot streak-camera measurements. The collected data is evaluated via quantitative statistical analysis schemes. Dynamically stable and unstable regions for the two-color operation are identified and the dependence on the pump conditions is analyzed.

Compact diode-laser-based system for continuous-wave and quasi-time-domain terahertz spectroscopy

We present a multimodal diode-laser-based terahertz (THz) spectroscopy system. In contrast to other laser-based THz setups that provide either cw or broadband THz generation, our configuration combines the advantages of both approaches. Our low complexity setup enables fast switching from cw difference frequency generation to broadband THz emission, enabling sophisticated data analysis like much more complex time domain spectroscopy systems.

Industrial applications of THz systems

Terahertz time-domain spectroscopy (THz TDS) holds high potential as a non-destructive, non-contact testing tool. We have identified a plethora of emerging industrial applications such as quality control of industrial processes and products in the plastics industry. Polymers are transparent to THz waves while additives show a significantly higher permittivity. This dielectric contrast allows for detecting the additive concentration and the degree of dispersion. We present a first inline configuration of a THz TDS spectrometer for monitoring polymeric compounding processes. To evaluate plastic components, non-destructive testing is strongly recommended. For instance, THz imaging is capable of inspecting plastic weld joints or revealing the orientation of fiber reinforcements. Water strongly absorbs THz radiation. However, this sensitivity to water can be employed in order to investigate the moisture absorption in plastics and the water content in plants. Furthermore, applications in food technology are discussed. Moreover, security scanning applications are addressed in terms of identifying liquid explosives. We present the vision and first components of a handheld security scanner. In addition, a new approach for parameter extraction of THz TDS data is presented. All in all, we give an overview how industry can benefit from THz TDS completing the tool box of non-destructive evaluation.

Thermal quenching of photoluminescence in Ga(AsBi)

We report on a comparative experimental and theoretical study of the thermal quenching of the photoluminescence (PL) intensity in Ga(AsBi)/GaAs heterostructures. An anomalous plateau in the PL thermal quenching is observed at intermediate temperatures under relatively low excitation intensities. Theoretical analysis based on a well-approved approach shows that this peculiar behavior points at a non-monotonous density of states (DOS) in the disorder-induced band tails with at least two-energy-scales. While in previous studies carried out at relatively high excitation intensities a single-energy-scale was sufficient to fit the thermal quenching of the PL in Ga(AsBi), our study at lower excitation intensities proves that two-energy-scales of disorder contribute to the thermal quenching of the PL. Possible energy shapes of the DOS, which can fit experimental data, are revealed.

High-Power Quantum-Dot Vertical-External-Cavity Surface-Emitting Laser Exceeding 8 W

We report on a record-high output power from an optically pumped quantum-dot vertical-external-cavity surface-emitting laser, optimized for high-power emission at 1040 nm. A maximum continuous-wave output power of 8.41 W is obtained at a heat sink temperature of 1.5°C. By inserting a birefringent filter inside the laser cavity, a wavelength tuning over a range of 45 nm is achieved.

High-Power Operation of Quantum-Dot Semiconductor Disk Laser at 1180 nm

In this letter, we report on a high-power operation of an optically pumped quantum-dot semiconductor disk laser designed for emission at 1180 nm. As a consequence of the optimization of the operation conditions, a record-high continuous-wave output power exceeding 7 W is obtained for this wavelength at a heat-sink temperature of 2 °C. A wavelength tuning over a range of 37 nm is achieved using a birefringent filter inside the cavity.

Energy scale of compositional disorder in Ga(AsBi)

We report on a study of compositional disorder in Ga(AsBi) structures. Temperature-dependent photoluminescence measurements on Ga(AsBi)/GaAs heterostructures with different Bi contents are performed. Experimental observations show an essentially non-monotonous dependence of the energy scale of disorder on the Bi content. Our theoretical analysis concludes that this peculiar behavior is a consequence of an essential bowing of the valence band edge as a function of Bi content and of a specific compositional dependence of the hole effective mass in Ga(AsBi) compounds.

Systematic investigation of single- and multi-mode operation in vertical-external-cavity surface-emitting lasers

We systematically study the single- and multi-mode emission of vertical-external-cavity surface-emitting lasers (VECSELs) using streak camera measurements and interferometric measurement techniques. In all experiments, the VECSEL chip is based on (GaIn)As multi-quantum wells as active medium designed for laser emission around 1010 nm. The emission is analyzed in dependence of the pump power, employing two resonator designs as well as different output couplers. We monitor the evolution of emission bandwidth and show that in our setups a stable two-color lasing –with both lasing intensities sharing the same gain region on the chip– is related to a sufficiently high number of longitudinal modes participating in the laser emission.