Monu Mishra

Probing the correlation between structure, carrier dynamics and defect states of epitaxial GaN film on (110) sapphire grown by rf-molecular beam epitaxy

A systematic study has been performed to correlate structural, optical and electrical properties with defect states in the GaN films grown on a-plane (110) sapphire substrate via rf-plasma molecular beam epitaxy. Morphological analysis reveals the presence of small lateral size (30–70 nm) hexagonally shaped V-pits on the GaN films. These V-defects possibly contribute as the main source of non-radiative decay. High resolution X-ray diffraction reveals highly single crystalline GaN film grown on a-plane sapphire substrate where the threading dislocations are the cause of V-defects in the film. Photoluminescence measurement shows a highly luminescence band to band emission of GaN film at 3.41 eV along with a broad defect band emission centered at 2.2 eV. A detailed optical and electrical analysis has been carried out to study the defect states and related carrier dynamics for determining the efficacy of the film for device fabrication. The variation in the low temperature current voltage measurements confirms the presence of deep level defects in the mid-band gap region while transient spectroscopy shows that non radiative decay is the dominant relaxation mechanism for the photo excited-carriers from these defect states.

Optical band gap tuning of Ag doped Ge2Sb2Te5 thin films

Thin films of (Ge2Sb2Te5)100−xAgx (x = 0, 1, 3, 5 and 10) were deposited using thermal evaporation technique. X-ray diffraction, scanning electron microscopy and energy dispersive X-ray spectroscopy was used to confirm the amorphous nature, uniformity and chemical compositions of deposited films respectively. Transmission spectra divulged the highly transparent nature of films in near infra red region. The average transmission in near infra red region and optical band gap (estimated by Tauc’s plot) was increased with Ag doping upto x = 3 while it decreased for higher values of x. The increase in transmission and optical band gap was attributed to the reduction in density of localized states and vacancies. However, the decrease in the transmission and optical band gap is due to the increase in distortion of the host Ge2Sb2Te5 lattice because Ag is doped at the expense of Ge, Sb and Te. The increased optical band gap could be utilized to reduce threshold current which enhances switching speed in phase change materials.

Electrochemical and magnetic properties of nanostructured CoMn2O4 and Co2MnO4

In this study, we have focused on the synthesis of cobalt manganite nanostructures using a simplistic hydrothermal route. We have explored these spinels as alternative low-cost bifunctional electrocatalysts for oxygen reduction/evolution reactions (ORR/OER). Herein, we have developed energy-saving, facile and rapid synthetic methodologies for highly active spinel electrocatalysts. Two spinel phases, cubic Co2MnO4 and tetragonal CoMn2O4 have been successfully obtained by tuning the stoichiometric ratio of Co and Mn salts respectively. These CoMn2O4 and Co2MnO4 nanocubes have been used as bifunctional catalysts towards OER and ORR. Electrocatalytic experiments show that cubic Co2MnO4 nanocubes show five times higher activity towards ORR than tetragonal CoMn2O4 nanocubes while the tetragonal phase is a better electrocatalyst towards OER than the cubic Co2MnO4 phase. XPS studies revealed two types of oxygen (lattice O and surface adsorbed O species like OH−) and the efficiency of the catalyst could be related to the binding affinity of oxygen. This explains the better catalytic activity of cubic Co2MnO4 which has a large percentage of adsorbed oxygen species. The stability of the catalyst was confirmed by carrying out TEM studies on a sample after carrying out 25 cycles. Magnetization experiments reveal that both the tetragonal CoMn2O4 as well as cubic Co2MnO4 show hysteresis at 10 K and 100 K without reaching saturation, which confirms an existing ferrimagnetic order in the samples. Both the tetragonal and cubic phases show Tc ∼ 110 K and 150 K respectively.

Fabrication of sensitive bioelectrode based on atomically thin CVD grown graphene for cancer biomarker detection

Motivation behind the present work is to fabricate a cost effective and scalable biosensing platform for an easy and reliable detection of cancer biomarker Carcinoembryonic antigen (CEA). Here, we report the sensitive and selective detection of CEA using graphene based bio-sensing platform. Large sized (~ 2.5 × 1.0cm2), uniform, continuous, single and few layers graphene films have been grown on copper (Cu) substrate employing chemical vapor deposition (CVD) technique using hexane as a liquid precursor. Functional group has been created over Graphene/Cu substrate through π-π stacking of 1- pyrenebutanoic acid succinimidyl ester (PBSE). Further, to make the sensor specific to CEA, antibody of CEA (anti-CEA) has been covalently immobilized onto PBSE/Graphene/Cu electrode. Selective and sensitive detection of CEA is achieved by anti-CEA/PBSE/Graphene/Cu electrode through electrochemical impedance spectroscopy (EIS) measurements. Under optimal condition, the fabricated sensor shows linear response in the physiological range 1.0-25.0ngmL-1 (normal value ~ 5.0ngmL-1), revealing sensitivity 563.4Ωng-1mLcm-2 with a correlation coefficient of 0.996 and limit of detection (LOD) 0.23ngmL-1. In this way, one step electrode fabrication with high specific surface area provides a light weight, low cost, reliable and scalable novel biosensing platform for sensitive and selective detection of CEA. We believe that this bioelectrode equipped with specific recognition elements could be utilized for detection of other biomolecules too.

Light Induced Electron-Phonon Scattering Mediated Resistive Switching in Nanostructured Nb Thin Film Superconductor

abstractThe elemental Nb is mainly investigated for its eminent superconducting properties. In contrary, we report of a relatively unexplored property, namely, its superior optoelectronic property in reduced dimension. We demonstrate here that nanostructured Nb thin films (NNFs), under optical illumination, behave as room temperature photo-switches and exhibit bolometric features below its superconducting critical temperature. Both photo-switch and superconducting bolometric behavior are monitored by its resistance change with light in visible and near infrared (NIR) wavelength range. Unlike the conventional photodetectors, the NNF devices switch to higher resistive states with light and the corresponding resistivity change is studied with thickness and grain size variations. At low temperature in its superconducting state, the light exposure shifts the superconducting transition towards lower temperature. The room temperature photon sensing nature of the NNF is explained by the photon assisted electron-phonon scattering mechanism while the low temperature light response is mainly related to the heat generation which essentially changes the effective temperature for the device and the device is capable of sensing a temperature difference of few tens of milli-kelvins. The observed photo-response on the transport properties of NNFs can be very important for future superconducting photon detectors, bolometers and phase slip based device applications.

Structural, optical and magnetic properties of Fe-doped CeO 2 samples probed using X-ray photoelectron spectroscopy

The present study reports the effect of Fe-doping on the structural, optical, magnetic and electronic properties of polycrystalline CeO2 (for 5 and 10% doping concentration of Fe-cation) samples synthesized by low-temperature solid-state reaction method. Rietveld refinement of the X-ray diffraction patterns establishes fluorite-type face-centred cubic structure of the Fe-doped CeO2 samples and also confirms successful incorporation of Fe ions in the CeO2 lattice. The UV–Vis–NIR absorption spectra displays reduce band gap energy with rising fluency of Fe-ions, which confirm red shifts in the Fe-doped CeO2 samples. The electronic structure of the pure CeO2 and Fe-doped CeO2 polycrystalline samples have been investigated by X-ray photoemission spectroscopy (XPS). The XPS spectra of Ce 3d reveals the reduction of Ce4+ to Ce3+ states Fe-doped CeO2 samples, which are well supported by the Fe 2p and O 1s spectra. Pure polycrystalline CeO2 displays diamagnetic behaviour at room temperature. Interestingly, 5% Fe-doped CeO2 sample displays S-shape hysteresis loop and establishes room temperature ferromagnetism, whereas, 10% Fe-doped CeO2 sample shows weak ferromagnetic behaviour. A decrement is observed in the magnetization on increasing the doping concentration. The possible reason for ferromagnetism in the Fe-doped CeO2 samples may be incorporation of oxygen vacancies, which are further discussed using F-centre exchange mechanism and double exchange interaction. These experimental findings offer potential opportunities for spintronics and optoelectronics applications by integrating them into device structures and evaluating their performance as a function of their material properties.

Bio-functionalization of grade V titanium alloy with type I human collagen for enhancing and promoting human periodontal fibroblast cell adhesion – an in-vitro study

Surface modification of medical grade V titanium alloy (Ti-6Al-4V) with biomolecules is an important and vital step for tailoring it for various biomedical applications. Present study investigates theinfluence of type I human collagen (T1HC) bio-conjugation through a three stage process. Polished grade V titanium alloy discs were functionalizedwith free OH group by means of controlled heat and alkali treatment followed by coating of 3-aminopropyltriethoxy (APTES) silane couplingagent. T1HC were bio-conjugated through 1-ethyl-3-(3-dimethyl aminopropyl) carbodiimide hydrochloride N-hydroxysuccinimide (EDCNHS)coupling reaction. At each stage, grade V titanium alloy surfaces were characterized by atomic force microscopy (AFM), scanning electronmicroscopy (SEM), Fourier transform infrared spectroscopy (FTIR) and Xrayphotoelectron spectroscopy (XPS). FTIR and XPS studies confirms thecovalent attachment of APTES with titanium alloy surface while terminalamine groups of APTES remained free for further attachment of T1HCthrough covalent bond. Aqueous stability of bio-conjugated titanium discsat various pH and time intervals (i.e. at pH of 5.5, 6.8 and 8.0 at timeinterval of 27 and 48h) confirmed the stability of T1HC bioconjugated collagen on titanium surface. Further human periodontalfibroblast cell line (HPdlF) culture revealed enhanced adhesion on theT1HC bio-conjugated surface compared to the polystyrene and polishedgrade V titanium alloy surfaces.

Surface-Engineered Nanostructure-Based Efficient Nonpolar GaN Ultraviolet Photodetectors

Surface-engineered nanostructured nonpolar (112̅0) gallium nitride (GaN)-based high-performance ultraviolet (UV) photodetectors (PDs) have been fabricated. The surface morphology of a nonpolar GaN film was modified from pyramidal shape to flat and trigonal nanorods displaying facets along different crystallographic planes. We report the ease of enhancing the photocurrent (5.5-fold) and responsivity (6-fold) of the PDs using a simple and convenient wet chemical-etching-induced surface engineering. The fabricated metal–semiconductor–metal structure-based surface-engineered UV PD exhibited a significant increment in detectivity, that is, from 0.43 to 2.83 (×108) Jones, and showed a very low noise-equivalent power (∼10–10 W Hz–1/2). The reliability of the nanostructured PD was ensured via fast switching with a response and decay time of 332 and 995 ms, which were more than five times faster with respect to the unetched pyramidal structure-based UV PD. The improvement in device performance was attributed to increased light absorption, efficient transport of photogenerated carriers, and enhancement in conduction cross section via elimination of recombination/trap centers related to defect states. Thus, the proposed method could be a promising approach to enhance the performance of GaN-based PD technology.

High transmittance contrast in amorphous to hexagonal phase of Ge2Sb2Te5: Reversible NIR-window

Ge2Sb2Te5 (GST) is one of the best phase change materials because of its splendid set of properties, viz., high thermal stability, fast crystallization speed, good endurance, scalability, and reliability. Phase transition [amorphous → face centered cubic (fcc) → hexagonal close packed (hcp)] of GST thin films with annealing was studied using X-ray diffraction. Thin films in amorphous, fcc, and hcp phases are highly, medium, and negligible transparent in the near infra-red region, respectively. The optical transmission in amorphous, fcc, and hcp phases is ∼92%, ∼46%, and ∼2%, respectively, at the wavelength of 2740 nm. At 2740 nm, a high transmission contrast (∼90%) is observed with phase transition from the amorphous to hcp phase. By utilizing large transmission contrast, it is demonstrated that GST can be availed as a potential candidate for reversible near infra-red-window. The sharp change in optical transmission with phase transition can be understood from the change in density of states in the valenc...

Highly selective and reversible NO2 gas sensor using vertically aligned MoS2 flake networks

We demonstrate a highly selective and reversible NO2 resistive gas sensor using vertically aligned MoS2 (VA-MoS2) flake networks. We synthesized horizontally and vertically aligned MoS2 flakes on SiO2/Si substrate using a kinetically controlled rapid growth CVD process. Uniformly interconnected MoS2 flakes and their orientation were confirmed by scanning electron microscopy, x-ray diffraction, Raman spectroscopy and x-ray photoelectron spectroscopy. The VA-MoS2 gas sensor showed two times higher response to NO2 compared to horizontally aligned MoS2 at room temperature. Moreover, the sensors exhibited a dramatically improved complete recovery upon NO2 exposure at its low optimum operating temperatures (100 °C). In addition, the sensing performance of the sensors was investigated with exposure to various gases such as NH3, CO2, H2, CH4 and H2S. It was observed that high response to gas directly correlates with the strong interaction of gas molecules on edge sites of the VA-MoS2. The VA-MoS2 gas sensor exhibited high response with good reversibility and selectivity towards NO2 as a result of the high aspect ratio as well as high adsorption energy on exposed edge sites.