Morley M. Blouke

Ultraviolet downconverting phosphor for use with silicon CCD imagers

The properties and application of a UV downconverting phosphor (coronene) to silicon charge coupled devices are discussed. Measurements of the absorption spectrum have been extended to below 1000 A, and preliminary results indicate the existence of useful response to at least 584 A. The average conversion efficiency of coronene was measured to be ~20% at 2537 A. Imagery at 3650 A using a backside illuminated 800 x 800 CCD coated with coronene is presented.

Coronene and liumogen as VUV sensitive coatings for Si CCD imagers: a comparison

Phosphor coatings have long been employed in the detection of UV radiation. With the interest in the use of silicon charge coupled device (CCD) imagers as the detector for the space telescope and other space-borne astronomical missions, a UV sensitive phosphor is desired the emission spectrum of which usefully matches the spectral response of the CCD. Such a phosphor would provide an unparalleled opportunity to image in the UV, the visible, and near IR wavelengths with the same detector. A recent study has suggested that coronene and sodium salicylate (which emit at 500 and 420 nm, respectively) are the most promising candidate phosphors. The potential of a third organic phosphor, liumogen, is the subject of this Letter.

800 X 800 Charge-Coupled Device Image Sensor

The design and performance of an 800 X 800 pixel charge-coupled device (CCD) imager are described. This device is fabricated utilizing a three-phase, three-level polysilicon gate process. The chip is thinned to 8 um and is employed in the rear illumination mode. Detailed measurements of the device performance, including dark current as a function of temperature, linearity, and noise, are presented. The device is coated with an ultraviolet (UV) downconverting phosphor which allows imaging with the same device over an extremely wide optical bandwidth.

Texas Instruments (TI) 800X800 Charge-Coupled Device (CCD) Image Sensor

The design and performance of the Texas Instruments 800 x 800 CCD imager are described. This device is fabricated utilizing a three phase, three level polysilicon gate process. The chip is thinned to ~ 8 μm and is employed in the rear illumination mode. Detailed measurements of device performance including dark current as a function of temperature, linearity, and noise are presented. The device is coated with a UV downconverting phosphor which allows imaging with the same device over an extremely wide optical bandwidth.

Traps and Deferred Charge in CCDs

Defects which collect charge and then release it into subsequent pixels are the major problem facing CCD users and manufacturers. These defects are categorized loosely into three groups: design, material, and processing induced traps. This paper discusses the current state of the understanding of these single pixel defects in terms of both experimental characterization and theoretical modelling.

Preliminary Characterization of Two High-Speed, Back-Illuminated CCD Image Sensors

This paper discusses the performance of two new sensors: a 2K×2K and a 4K×4K pixel array. These thinned arrays are intended for high frame rate, scientific applications

SIOO2A: a three side buttable 2048 x 4096 CCD image sensor

This paper will describe in some detail a new large area CCD image sensor designed specifically to be used either as a single imager or assembled in large, tightly configured mosaics of CCDs. The device has 2048 X 4096, 15 micrometers pixels. Performance data are presented on both front- and back-illuminated parts.

Progress In 800x800 Charge-Coupled Device (CCD) Imager Development And Applications

The Jet Propulsion Laboratory (JPL) is currently developing two imaging sensors using 800 x 800 charge coupled devices (CCDs) developed by Texas Instruments (TI). The Space Telescope Wide Field and Planetary Camera uses a three phase device. The original intent was to use the same device for the Project Galileo imaging system, however the radiation environment near Jupiter would have caused problems of both radiation damage and radiation induced noise with the three phase device. The availability of virtual phase technology provided a solution to the radiation problem. This paper compares the performance of the two different imagers and describes plans for further development of large scale virtual phase imagers.*