Mourad Benamara

Pure and stable metallic phase molybdenum disulfide nanosheets for hydrogen evolution reaction

Metallic-phase MoS2 (M-MoS2) is metastable and does not exist in nature. Pure and stable M-MoS2 has not been previously prepared by chemical synthesis, to the best of our knowledge. Here we report a hydrothermal process for synthesizing stable two-dimensional M-MoS2 nanosheets in water. The metal–metal Raman stretching mode at 146 cm−1 in the M-MoS2 structure, as predicted by theoretical calculations, is experimentally observed. The stability of the M-MoS2 is associated with the adsorption of a monolayer of water molecules on both sides of the nanosheets, which reduce restacking and prevent aggregation in water. The obtained M-MoS2 exhibits excellent stability in water and superior activity for the hydrogen evolution reaction, with a current density of 10 mA cm−2 at a low potential of −175 mV and a Tafel slope of 41 mV per decade.

Two-Dimensional Water-Coupled Metallic MoS2 with Nanochannels for Ultrafast Supercapacitors

MoS2 is a promising electrode material for energy storage. However, the intrinsic multilayer pure metallic MoS2 (M-MoS2) has not been investigated for use in supercapacitors. Here, an ultrafast rate supercapacitor with extraordinary capacitance using a multilayer M-MoS2-H2O system is first investigated. Intrinsic M-MoS2 with a monolayer of water molecules covering both sides of nanosheets is obtained through a hydrothermal method with water as solvent. The super electrical conductivity of the as-prepared pure M-MoS2 is beneficial to electron transport for high power supercapacitor. Meanwhile, nanochannels between the layers of M-MoS2-H2O with a distance of ∼1.18 nm are favorable for increasing the specific space for ion diffusion and enlarging the surface area for ion adsorption. By virtue of this, M-MoS2-H2O reaches a high capacitance of 380 F/g at a scan rate of 5 mV/s and still maintains 105 F/g at scan rate of 10 V/s. Furthermore, the specific capacitance of the symmetric supercapacitor based on M-MoS2-H2O electrodes retain a value as high as 249 F/g under 50 mV/s. These findings suggest that multilayered M-MoS2-H2O system with ion accessible large nanochannels and efficient charge transport provide an efficient energy storage strategy for ultrafast supercapacitors.

1.3-μm InAs/GaAs quantum-dot lasers monolithically grown on Si substrates using InAlAs/GaAs dislocation filter layers

We report on the operation of electrically pumped 1.3μm InAs QD laser directly grown on a Si substrate using InAlAs/GaAs dislocation filter layers with a threshold current density of 194A/cm2 and output power of ~80mW.

Uniform thickness and colloidal-stable CdS quantum disks with tunable thickness: Synthesis and properties

AbstractUniform thickness and colloidal-stable CdS quantum disks have been reproducibly prepared using cadmium acetate, elemental sulfur, fatty acids and octadecene as the starting materials without any size/shape sorting. The thickness could be varied between 1.2 and 2.2 nm, i.e., 4.5, 5.5, 6.5 and 7.5 monolayers of CdS along the thickness direction. These single crystalline disks with lateral dimensions between 20 and 100 nm adopted the zinc blende crystal structure with 〈100〉 (possibly mixed with 〈111〉) as the thickness direction. The basal planes and side facets were terminated with cadmium carboxylates, which dictated the thicknesses to be half a monolayer more than an integer number. Formation of CdS quantum disks probably occurs through a “nucleation-growth” mechanism, instead of aggregation of pre-formed magic clusters. Completion of a full monolayer along the lateral direction was found to be rather fast if two-dimensional nucleation was initiated on existing disks, which helped formation of atomically flat and thickness-controlled disks. As disk thickness decreased, the crystal lattice was found to dilate gradually, which has not been observed with CdS quantum dots. Compared with CdS quantum dots and rods, the disks displayed weakened quantum confinement and their photoluminescence lifetime (tens of picoseconds) was about two orders of magnitude shorter.

Aharonov-Bohm interference in neutral excitons: effects of built-in electric fields

We report a comprehensive discussion of quantum interference effects due to the finite structure of neutral excitons in quantum rings and their first experimental corroboration observed in the optical recombinations. The signatures of built-in electric fields and temperature on quantum interference are demonstrated by theoretical models that describe the modulation of the interference pattern and confirmed by complementary experimental procedures.

Molecular beam epitaxial growth of Bi2Te3 and Sb2Te3 topological insulators on GaAs (111) substrates: a potential route to fabricate topological insulator p-n junction

High quality Bi2Te3 and Sb2Te3 topological insulators films were epitaxially grown on GaAs (111) substrate using solid source molecular beam epitaxy. Their growth and behavior on both vicinal and non-vicinal GaAs (111) substrates were investigated by reflection high-energy electron diffraction, atomic force microscopy, X-ray diffraction, and high resolution transmission electron microscopy. It is found that non-vicinal GaAs (111) substrate is better than a vicinal substrate to provide high quality Bi2Te3 and Sb2Te3 films. Hall and magnetoresistance measurements indicate that p type Sb2Te3 and n type Bi2Te3 topological insulator films can be directly grown on a GaAs (111) substrate, which may pave a way to fabricate topological insulator p-n junction on the same substrate, compatible with the fabrication process of present semiconductor optoelectronic devices.

Effects of spatial confinement and layer disorder in photoluminescence of GaAs1−xBix/GaAs heterostructures

The structural and optical properties of a set of high-quality GaAs1−xBix/GaAs quantum well (QW) heterostructures with Bi concentrations ranging from 3.5% to 6.7% are studied. The energies of the excitonic ground state transitions are determined as a function of Bi concentration and spatial confinement. The influence of material disorder on the optical properties of QWs is investigated. It is determined that trap-related luminescence responds differently to temperature changes depending on whether the Bi concentration is more or less than 5%. Below 5% it contributes significantly to the overall photoluminescence line shape whereas above 5%, it is insignificant.

Molecular beam epitaxy growth of GaAsBi/GaAs/AlGaAs separate confinement heterostructures

GaAsBi/GaAs/AlGaAs separate confinement heterostructures are grown using an asymmetric temperature profile due to the low optimal growth temperature of GaAsBi; the bottom AlGaAs barrier is grown at 610 °C, while the GaAsBi quantum well and the top AlGaAs barrier are grown at 320 °C. Cross-sectional transmission electron microscopy and room temperature photoluminescence measurements indicate that this approach results in samples with excellent structural and optical properties. The high quality of the low temperature AlGaAs barrier is attributed to the presence of Bi on the surface as indicated by a (1 × 3) surface reconstruction persisting throughout the low temperature growth.

Tunneling-barrier controlled excitation transfer in hybrid quantum dot-quantum well nanostructures

A systematic spectroscopic study of the carrier transfer between quantum dot (QD) and quantum well (QW) layers is carried out in a hybrid dot-well system based on InAs QDs and InGaAs QWs. We observe a strong dependence of the QD and QW photoluminescence (PL) both on the dot-well barrier thickness and height. For thick (or high) barriers QD and QW systems accumulate independently sufficient photogenerated carrier densities to be seen in PL even at low nonresonant excitation power. For thin (or low) barriers it is impossible to detect the PL signal from QW at low excitation densities due to effective carrier transfer from QW to QDs. Strong state-filling effects of the excited QD states influence the carrier transfer efficiencies. By investigating the carrier dynamics using time-resolved spectroscopy and the state-filling effects in the continuous wave excitation regime the basic characteristics of interlevel, intersublevel, and dot-well relaxation are determined. The mechanisms of the dot-well coupling are ...

Nanoscale Footprints of Self-Running Gallium Droplets on GaAs Surface

In this work, the nanoscale footprints of self-driven liquid gallium droplet movement on a GaAs (001) surface will be presented and analyzed. The nanoscale footprints of a primary droplet trail and ordered secondary droplets along primary droplet trails are observed on the GaAs surface. A well ordered nanoterrace from the trail is left behind by a running droplet. In addition, collision events between two running droplets are investigated. The exposed fresh surface after a collision demonstrates a superior evaporation property. Based on the observation of droplet evolution at different stages as well as nanoscale footprints, a schematic diagram of droplet evolution is outlined in an attempt to understand the phenomenon of stick-slip droplet motion on the GaAs surface. The present study adds another piece of work to obtain the physical picture of a stick-slip self-driven mechanism in nanoscale, bridging nano and micro systems.