Mt Martin Hill

A fast low-power optical memory based on coupled micro-ring lasers

The increasing speed of fibre-optic-based telecommunications has focused attention on high-speed optical processing of digital information. Complex optical processing requires a high-density, high-speed, low-power optical memory that can be integrated with planar semiconductor technology for buffering of decisions and telecommunication data. Recently, ring lasers with extremely small size and low operating power have been made, and we demonstrate here a memory element constructed by interconnecting these microscopic lasers. Our device occupies an area of 18 × 40 µm2 on an InP/InGaAsP photonic integrated circuit, and switches within 20 ps with 5.5 fJ optical switching energy. Simulations show that the element has the potential for much smaller dimensions and switching times. Large numbers of such memory elements can be densely integrated and interconnected on a photonic integrated circuit: fast digital optical information processing systems employing large-scale integration should now be viable.

Lasing in metal-insulator-metal sub-wavelength plasmonic waveguides

We demonstrate lasing in Metal-Insulator-Metal (MIM) waveguides filled with electrically pumped semiconductor cores, with core width dimensions below the diffraction limit. Furthermore these waveguides propagate a transverse magnetic (TM0) or so called gap plasmon mode [1-4]. Hence we show that losses in sub-wavelength MIM waveguides can be overcome to create small plasmon mode lasers at wavelengths near 1500 nm. We also give results showing room temperature lasing in MIM waveguides, with approximately 310 nm wide semiconductor cores which propagate a transverse electric mode.

Optical packet switching and buffering by using all-optical signal processing methods

We present a 1 /spl times/ 2 all-optical packet switch. All the processing of the header information is carried out in the optical domain. The optical headers are recognized by employing the two-pulse correlation principle in a semiconductor laser amplifier in loop optical mirror (SLALOM) configuration. The processed header information is stored in an optical flip-flop memory that is based on a symmetric configuration of two coupled lasers. The optical flip-flop memory drives a wavelength routing switch that is based on cross-gain modulation in a semiconductor optical amplifier. We also present an alternative optical packet routing concept that can be used for all-optical buffering of data packets. In this case, an optical threshold function that is based on a asymmetric configuration of two coupled lasers is used to drive a wavelength routing switch. Experimental results are presented for both the 1 /spl times/ 2 optical packet switch and the optical buffer switch.

Nonlinear polarization rotation in semiconductor optical amplifiers: theory and application to all-optical flip-flop memories

We present a model for polarization-dependent gain saturation in strained bulk semiconductor optical amplifiers. We assume that the polarized optical field can be decomposed into transverse electric and transverse magnetic components that have indirect interaction with each other via the gain saturation. The gain anisotropy due to tensile strain in the amplifier is accounted for by a population imbalance factor. The model is applied to a nonlinear polarization switch, for which results are obtained, that are in excellent agreement with experimental data. Finally, we describe an all-optical flip-flop memory that is based on two coupled nonlinear polarization switches.

IST-LASAGNE: towards all-optical label swapping employing optical logic gates and optical flip-flops

The Information Society Technologies-all-optical LAbel SwApping employing optical logic Gates in NEtwork nodes (IST-LASAGNE) project aims at designing and implementing the first, modular, scalable, and truly all-optical photonic router capable of operating at 40 Gb/s. The results of the first project year are presented in this paper, with emphasis on the implementation of network node functionalities employing optical logic gates and optical flip-flops, as well as the definition of the network architecture and migration scenarios.

All-optical flip-flop based on coupled laser diodes

An all-optical set-reset flip-flop is presented that is based on two coupled lasers with separate cavities and lasing at different wavelengths. The lasers are coupled so that lasing in one of the lasers quenches lasing in the other laser. The flip-flop state is determined by the laser that is currently lasing. A rate-equation based model for the flip-flop is developed and used to obtain steady-state characteristics. Important properties of the system, such as the minimum coupling between lasers and the optical power required for switching, are derived from the model. These properties are primarily dependent on the laser mirror reflectivity, the inter-laser coupling, and the power emitted from one of the component lasers, affording the designer great control over the flip-flop properties. The flip-flop is experimentally demonstrated with two lasers constructed from identical semiconductor optical amplifiers (SOAs) and fiber Bragg gratings of different wavelengths. Good agreement between the theory and experiment is obtained. Furthermore, switching over a wide range of input wavelengths is shown; however, increased switching power is required for wavelengths far from the SOA gain peak.

Wavelength conversion using nonlinear polarization rotation in a single semiconductor optical amplifier

We discuss an all-optical wavelength converter based on nonlinear polarization rotation in a single semiconductor optical amplifier. We show that inverted and noninverted wavelength conversion can be realized. We also demonstrate this wavelength-conversion concept can operate over a large wavelength range. Experiments show that error-free wavelength conversion can be obtained at a bit rate of 10 Gb/s.

Record performance of electrical injection sub-wavelength metallic-cavity semiconductor lasers at room temperature

We demonstrate a continuous wave (CW) sub-wavelength metallic-cavity semiconductor laser with electrical injection at room temperature (RT). Our metal-cavity laser with a cavity volume of 0.67λ3 (λ = 1591 nm) shows a linewidth of 0.5 nm at RT, which corresponds to a Q-value of 3182 compared to 235 of the cavity Q, the highest Q under lasing condition for RT CW operation of any sub-wavelength metallic-cavity laser. Such record performance provides convincing evidences of the feasibility of RT CW sub-wavelength metallic-cavity lasers, thus opening a wide range of practical possibilities of novel nanophotonic devices based on metal-semiconductor structures.

Optical signal processing based on self-induced polarization rotation in a semiconductor optical amplifier

We demonstrate novel optical signal processing functions based on self-induced nonlinear polarization rotation in a semiconductor optical amplifier (SOA). Numerical and experimental results are presented, which demonstrate that a nonlinear polarization switch can be employed to achieve all-optical logic. We demonstrate an all-optical header processing system, an all-optical seed pulse generator for packet synchronization, and an all-optical arbiter that can be employed for optical buffering at a bit rate of 10 Gb/s. Experimental results indicate that optical signal processing functions based on self-polarization rotation have a higher extinction ratio and a lower power operation compared with similar functions based on self-phase modulation.

Status and prospects for metallic and plasmonic nano-lasers [Invited]

A remarkable miniaturization of lasers has occurred in just the past few years by employing metals to form the laser resonator. From having minimum laser dimensions being at least several wavelengths of the light emitted, many devices have been shown where the laser size is of a wavelength or less. Additionally some devices show lasing in structures significantly smaller than the wavelength of light in several dimensions, and the optical mode is far smaller than allowed by the diffraction limit. In this article we review what has been achieved then look forward to what some of the directions development could take and where possible applications could lie. In particular we show that there are devices with an optical size slightly larger or near the diffraction limit which could soon be employed in many applications requiring coherent light sources. Application of devices with dimensions far below the diffraction limit is also on the horizon, but may take more time.