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Dive into the research topics where Muhammad Hussain is active.

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Featured researches published by Muhammad Hussain.


New Journal of Chemistry | 2014

Enhanced photocatalytic and electrochemical properties of Au nanoparticles supported TiO2 microspheres

Muhammad Hussain; M. Ahmad; Amjad Nisar; Hongyu Sun; S. Karim; Maaz Khan; Sabih D Khan; Munawar Iqbal; Syed Zahid Hussain

Au/TiO2 composites were synthesized by a two-step hydrothermal approach and their photocatalytic and electrochemical properties were investigated. It is found that Au/TiO2 composites with a large specific surface area, stability and catalytic activity of Au nanoparticles (NPs) demonstrate enhanced photocatalytic activity compared to pure TiO2 microspheres. Furthermore, the electrochemical properties of the Au/TiO2 composite electrode demonstrate its ability to electrocatalyze the oxidation of hydrogen peroxide and substantially increase the response current. In addition, this modified electrode also exhibits a very rapid and sensitive response towards glucose detection at the low operating potential. The modified electrode shows a linear response from 1.0 to 15 mM with a reproducible sensitivity of 1350 μA mM−1 cm−2 within a response time of less than 6 s. The photocatalytic and electrochemical activity of Au/TiO2 composites provides a new platform for environmental remediation and biomedical applications. All these results reveal that Au/TiO2 composites exhibit great prospects for developing efficient non-enzymatic biosensors.


Chinese Physics B | 2014

Bipolar tri-state resistive switching characteristics in Ti/CeOx/Pt memory device

Muhammad Ismail; M. W. Abbas; Anwar Manzoor Rana; Ijaz Talib; E. Ahmed; Muhammad Younus Nadeem; Tsung-Ling Tsai; Umesh Chand; Nazar Abbas Shah; Muhammad Hussain; Abdul Aziz; M. T. Bhatti

Highly repeatable multilevel bipolar resistive switching in Ti/CeOx/Pt nonvolatile memory device has been demonstrated. X-ray diffraction studies of CeO2 films reveal the formation of weak polycrystalline structure. The observed good memory performance, including stable cycling endurance and long data retention times (> 104 s) with an acceptable resistance ratio (~102), enables the device for its applications in future non-volatile resistive random access memories (RRAMs). Based on the unique distribution characteristics of oxygen vacancies in CeOx films, the possible mechanism of multilevel resistive switching in CeOx RRAM devices has been discussed. The conduction mechanism in low resistance state is found to be Ohmic due to conductive filamentary paths, while that in the high resistance state was identified as Ohmic for low applied voltages and a space-charge-limited conduction dominated by Schottky emission at high applied voltages.


Journal of Nanoparticle Research | 2016

Noble metal nanoparticle-functionalized ZnO nanoflowers for photocatalytic degradation of RhB dye and electrochemical sensing of hydrogen peroxide

Muhammad Hussain; Hongyu Sun; S. Karim; Amjad Nisar; Maaz Khan; Anwar ul Haq; Munawar Iqbal; M. Ahmad


Procedia - Social and Behavioral Sciences | 2011

Anxiety and Attitude Of Secondary School Students Towards Foreign Language Learning

Muhammad Hussain; Saeed Shahid; Amir Zaman


Solid State Communications | 2015

Room-temperature fabricated, fully transparent resistive memory based on ITO/CeO2 /ITO structure for RRAM applications

Muhammad Ismail; Anwar Manzoor Rana; Ijaz Talib; Tsung-Ling Tsai; Umesh Chand; E. Ahmed; Muhammad Younus Nadeem; Abdul Aziz; Nazar Abbas Shah; Muhammad Hussain


Materials Chemistry and Physics | 2016

AgTiO2 nanocomposite for environmental and sensing applications

Muhammad Hussain; Saima Tariq; M. Ahmad; Hongyu Sun; K. Maaz; Ghafar Ali; Syed Zahid Hussain; Munawar Iqbal; S. Karim; Amjad Nisar


Electroanalysis | 2015

Development of Silver Nanowires Based Highly Sensitive Amperometric Glucose Biosensor

M. Ahmad; Hongyu Sun; Muhammad Hussain; S. Karim; Amjad Nisar; Maaz Khan


Materials Science in Semiconductor Processing | 2015

Thickness effect on the bipolar switching mechanism for nonvolatile resistive memory devices based on CeO2 thin films

Anwar Manzoor Rana; Muhammad Ismail; E. Ahmed; Ijaz Talib; Tahira Khan; Muhammad Hussain; Muhammad Younus Nadeem


Materials Chemistry and Physics | 2015

Electrical transport properties of single crystal vanadium pentoxide nanowires

Muhammad Hussain; M. Nadeem; Hongyu Sun; S. Karim; Amjad Nisar; Maaz Khan; M. Ahmad


Applied Physics A | 2018

Influence of argon and oxygen pressure ratio on bipolar-resistive switching characteristics of CeO 2− x thin films deposited at room temperature

Muhammad Ismail; Rehmat Ullah; Riaz Hussain; Ijaz Talib; Anwar Manzoor Rana; Muhammad Hussain; Khalid Mahmood; Fayyaz Hussain; E. Ahmed; Dinghua Bao

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Anwar Manzoor Rana

Bahauddin Zakariya University

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E. Ahmed

Bahauddin Zakariya University

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Ijaz Talib

Bahauddin Zakariya University

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Hongyu Sun

Technical University of Denmark

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Munawar Iqbal

University of the Punjab

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Dinghua Bao

Sun Yat-sen University

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Muhammad Ismail

National Chiao Tung University

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Abdul Aziz

Bahauddin Zakariya University

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Fayyaz Hussain

Bahauddin Zakariya University

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