Muhammad Y. Afridi

A monolithic CMOS microhotplate-based gas sensor system

A monolithic CMOS microhotplate-based conductance-type gas sensor system is described. A bulk micromachining technique is used to create suspended microhotplate structures that serve as sensing film platforms. The thermal properties of the microhotplates include a 1-ms thermal time constant and a 10/spl deg/C/mW thermal efficiency. The polysilicon used for the microhotplate heater exhibits a temperature coefficient of resistance of 1.067/spl times/10/sup -3///spl deg/C. Tin(IV) oxide and titanium(IV) oxide (SnO/sub 2/,TiO/sub 2/) sensing films are grown over postpatterned gold sensing electrodes on the microhotplate using low-pressure chemical vapor deposition (LPCVD). An array of microhotplate gas sensors with different sensing film properties is fabricated by using a different temperature for each microhotplate during the LPCVD film growth process. Interface circuits are designed and implemented monolithically with the array of microhotplate gas sensors. Bipolar transistors are found to be a good choice for the heater drivers, and MOSFET switches are suitable for addressing the sensing films. An on-chip operational amplifier improves the signal-to-noise ratio and produces a robust output signal. Isothermal responses demonstrate the ability of the sensors to detect different gas molecules over a wide range of concentrations including detection below 100 nanomoles/mole.

Microhotplate Temperature Sensor Calibration and BIST

In this paper we describe a novel long-term microhotplate temperature sensor calibration technique suitable for Built-In Self Test (BIST). The microhotplate thermal resistance (thermal efficiency) and the thermal voltage from an integrated platinum-rhodium thermocouple were calibrated against a freshly calibrated four-wire polysilicon microhotplate-heater temperature sensor (heater) that is not stable over long periods of time when exposed to higher temperatures. To stress the microhotplate, its temperature was raised to around 400 °C and held there for days. The heater was then recalibrated as a temperature sensor, and microhotplate temperature measurements were made based on the fresh calibration of the heater, the first calibration of the heater, the microhotplate thermal resistance, and the thermocouple voltage. This procedure was repeated 10 times over a period of 80 days. The results show that the heater calibration drifted substantially during the period of the test while the microhotplate thermal resistance and the thermocouple-voltage remained stable to within about plus or minus 1 °C over the same period. Therefore, the combination of a microhotplate heater-temperature sensor and either the microhotplate thermal resistance or an integrated thin film platinum-rhodium thermocouple can be used to provide a stable, calibrated, microhotplate-temperature sensor, and the combination of the three sensor is suitable for implementing BIST functionality. Alternatively, if a stable microhotplate-heater temperature sensor is available, such as a properly annealed platinum heater-temperature sensor, then the thermal resistance of the microhotplate and the electrical resistance of the platinum heater will be sufficient to implement BIST. It is also shown that aluminum- and polysilicon-based temperature sensors, which are not stable enough for measuring high microhotplate temperatures (>220 °C) without impractically frequent recalibration, can be used to measure the silicon substrate temperature if never exposed to temperatures above about 220 °C.

A monolithic implementation of interface circuitry for CMOS compatible gas-sensor system

A monolithic micro-gas-sensor system, designed and fabricated in a standard CMOS process, is described. The gas-sensor system incorporates an array of four microhotplate-based gas-sensing structures. The system utilizes a thin film of tin oxide (SnO/sub 2/) as a sensing material. The interface circuitry on the chip has digital decoders to select each element of the sensing array and an operational amplifier to monitor the change in conductance of the film. The chip is post-processed to create microhotplates using bulk micro-machining techniques. Measurements are presented for various portions of the interface circuitry used for the gas-sensor system.

Simple Thermal-Efficiency Model for CMOS-Microhotplate Design

Simple, semi-empirical, first-order, analytic approximations to the current, voltage, and power as a function of microhotplate temperature are derived. To lowest order, the voltage is independent of, and the power and current are inversely proportional to, the length of the microhotplate heater legs. A first-order design strategy based on this result is described.

Novel electrostatic discharge protection structure for a monolithic gas sensor systems-on-a-chip

A new on-chip electrostatic discharge (ESD) protection scheme is demonstrated for microelectromechanical systems (MEMS)-based embedded sensor (ES) system-on-a-chip (SoC). The ESD protection scheme includes ground-referenced protection cells implemented with novel multifinger thyristor-type devices for (1) input/output (I/O) protection; (2) power supply clamp; (3) protection at the internal sensor electrodes. The I-V characteristics of the thyristor-type protection cells are adjusted to provide an optimum ESD protection per unit area. Transmission line pulsing (TLP) measurements and ESD testing show superb high conductance on-state I-V characteristics with no latch-up problem when thyristor-type devices are subjected to an ESD event, while very low leakage current is obtained at the SoC operating voltage.