Mukul K. Das
Indian Institutes of Technology
Network
Latest external collaboration on country level. Dive into details by clicking on the dots.
Publication
Featured researches published by Mukul K. Das.
international conference on numerical simulation of optoelectronic devices | 2017
Prakash Pareek; Ravi Ranjan; Mukul K. Das
This work investigates performance of strain balanced SiGeSn/GeSn multi quantum well infrared photodetector by numerical analysis. Expression of responsivity is obtained by solving rate equation and continuity equation at steady state considering carrier transport mechanism across multiple well-barrier interfaces. The result shows a significant responsivity is achieved in mid-IR wavelength region which further increase on with no. of wells. Responsivity is also studied under variation of Sn content in quantum well.
international conference on numerical simulation of optoelectronic devices | 2017
Ravi Ranjan; Prakash Pareek; Mukul K. Das
In this work we present an analysis of static response of Ge-Si<inf>0.12</inf>Ge<inf>0.73</inf>Sn<inf>0.15</inf>/Si<inf>0.11</inf>Ge<inf>0.73</inf>Sn<inf>0.16</inf> n-p-n mid-infrared transistor laser (TL) with strain balanced Ge<inf>0.85</inf>Sn<inf>0.15</inf> single quantum well (QW) in the base. Laser rate equation and continuity equation are used to obtain the static response. The estimated results illustrate that design of group IV material based TL is feasible that has a potential application in mid-infrared optoelectronics integrated circuit.
Proceedings of SPIE | 2017
Prakash Pareek; Ravi Ranjan; Mukul K. Das
In this work carrier transport mechanism in strain balanced SiGeSn/GeSn QWIP is studied to obtain the frequency response. Initially, a QWIP model is proposed in which a 76Å thick Ge0.83Sn0.17 layer is sandwiched between two tensile strained Si0.09Ge0.8 Sn0.11 layers to form a type-I single strain balanced quantum-well infrared photodetector (SQWIP). The rate equation in quantum well and continuity equation over the well are solved simultaneously to obtain frequency response. The 3dB bandwidth obtained from frequency response is evaluated as 47 GHz at zero bias which increased with the applied bias. Also, the effect of bias dependent escape rates of carrier from the quantum well on the 3dB bandwidth is studied.
Superlattices and Microstructures | 2017
Prakash Pareek; Mukul K. Das; Subindu Kumar
Superlattices and Microstructures | 2016
Bindu Priyadarshini; Mukul K. Das; Mrinal Sen; Subindu Kumar
international conference on microwave and photonics | 2018
Ravi Ranjan; Kuntal Barman; Mukul K. Das
Opto-electronics Review | 2018
Prakash Pareek; Mukul K. Das; Subindu Kumar
Optics and Laser Technology | 2018
Ravi Ranjan; Mukul K. Das; Subindu Kumar
Journal of Computational Electronics | 2018
Prakash Pareek; Mukul K. Das; Subindu Kumar
Superlattices and Microstructures | 2017
Md. Aref Billaha; Mukul K. Das; Subindu Kumar
