Mun Ja Kim

Growth characteristics of carbon nanotubes via aluminum nanopore template on Si substrate using PECVD

Abstract Well ordered nano sized pore was fabricated on Si substrate using anodic oxidation method. Carbon nanotubes (CNTs) were grown on the well-ordered anodic aluminum oxide (AAO) template formed on Si substrate using plasma enhanced chemical vapor deposition with acetylene (C2H2). Without catalytic metal on the bottom of the AAO template, CNTs were grown on the top and within a nano-channel of the alumina template at 550 °C. The effect of process parameters such as plasma intensity, temperature and gas composition on the morphology of CNTs was investigated.

Growth of carbon nanotubes with anodic aluminum oxide formed on the catalytic metal-coated Si substrate

In order to improve the selectivity and uniformity of carbon nanotubes (CNTs), we have examined growth of CNTs on a porous alumina template. Well-ordered, nano-sized pores were fabricated on a Si substrate using an anodic oxidation method. CNTs were grown on the well-ordered anodic aluminum oxide template, which was formed on the Si substrate using plasma enhanced chemical vapor deposition with acetylene. With the catalytic metal at the bottom of the anodic aluminum oxide template, CNTs were grown within a nano-channel of the alumina template at 550 °C.

Study of nanometer-thick graphite film for high-power EUVL pellicle

Extreme ultraviolet (EUV) lithography has received much attention in the semiconductor industry as a promising candidate to extend dimensional scaling beyond 10nm. Recently EUV pellicle introduction is required to improve particle level inside scanner for EUV mass production. We demonstrate that a new pellicle material, nanometer-thick graphite film (NGF), is one of the best candidates of EUV pellicle membrane. A NGF pellicle with excellent thermal (ε≥0.4 @R.T, <100nm), mechanical (415MPa @~100nm), chemical and optical (24hrs durability under exposure of EUV/H2 at 4W/cm2 with pH2~5Pa) properties can be a promising and superb candidate for EUV pellicle membrane compared to Si pellicles with capping layers.

EUV mask readiness for HVM (Conference Presentation)

Currently, we are supplying defect-free EUV mask for device development. This was one of the biggest challenges in the implementation of EUV lithography for high volume manufacturing (HVM). It became possible to hide all multi-layer defects by using defect avoidance technique through improvement of blank mask defectivity and development of actinic blank inspection tool. In addition, EUV pellicle is also considered as a requisite to guarantee predictable yield. Both development of mask shop tools and preparation of EUV scanner for pellicle are going well. However, still membrane needs to be much improved in terms of transmittance and robustness for HVM. At the conference, EUV mask readiness for HVM will be discussed including blank defect improvement, preparation of actinic tools and pellicle development.

30nm full field quartz template replicated from Si master for FLASH active layer NIL

38nm half pitch pattern was replicated from Si master pattern to quartz blank template. It is a novel approach different from typical quartz to quartz replication. This replication concept is expected to alleviate the burden not only in cost but also resolution for NIL template fabrication. In this study, full field Si master fabricated by ArF immersion lithography, UV-transparent hard mask for quartz blank template and core-out quartz blank template were applied to prove the concept. And the replica template was evaluated with NIL and subsequent etching.

Characterization of Brightness of ZnS Electroluminescent Device with Dielectric Materials of SOG or TEOS

Spin on glass (SOG) and Tetraethylorthosilicate (TEOS) as a dielectric material were applied for inorganic powder type electroluminescent (EL) device. The spin coating method was used for the SOG layer or TEOS layer formation and phosphor layer formation. The phosphor layer was composed of ZnS:Cu,Cl powders and organic binder. The brightness of powder EL has been measured.

Characterization of Brightness of Electroluminescent Device Using Powder Phosphor Composite with ZnO or TiO2

For the growth of Electroluminescent (EL) device market, the attention of many researchers is centered on improving the properties such as brightness, power consumption, device reliability, etc. The powder EL device is one of solutions for the easy mass production, the simplification of structure, and low cost. Although the powder process is the solution, that has the problem with the poor brightness than the film process. So, we focused on increasing the brightness of powder EL device. The emissive layer was made up the composites adding metal oxide nanopowder such as TiO2 and ZnO to powder phosphors. As the data of previous researcher, the TiO2 and ZnO had the different dominating traps by photovoltage measure, that is, TiO2 show hole traps, ZnO show electron traps [1]. The brightness of powder EL device proportions to the high electricfield formation. The TiO2 or ZnO in the powder phosphor composite can help the emission that may be advantageous to form high electricfield at low voltage. The EL devices with green ZnS phosphor were fabricated using spin coating method. The effect of TiO2 and ZnO on the luminescent property of EL device was investigated. The brightness was obtained as applied driving voltage at 400 Hz and frequency variation at 50 V.