Mustafa Yüksek

Good optical limiting performance of indium and gallium phthalocyanines in a solution and co-polymer host

The optical limiting characteristics of tetra- and octasubstituted gallium and indium phthalocyanine complexes have been studied by means of the open-aperture Z-scan technique with nanosecond pulses at 532 nm. The nonlinear response demonstrated that all investigated compounds exhibited strong reverse saturable absorption for both solution and solid-state-based experiments. The results showed that the ratio of the excited to ground state absorption cross section κ and effective nonlinear absorption coefficient βeff are largely dependent on the linear absorption coefficient. All compounds in chloroform exhibited almost the same optical limiting performance at the same linear absorption coefficient. Pc/PMMA composite films display a much larger effective nonlinear absorption coefficient, lower ratio of the excited to ground state absorption cross section and lower saturation fluence for optical limiting when compared to the same Pc molecules in solution. All gallium and indium complexes of phthalocyanines are good candidates for optical limiting applications.

Synthesis, characterization and nonlinear absorption of novel octakis-POSS substituted metallophthalocyanines and strong optical limiting property of CuPc

In this study, the preparation of some novel metallophthalocyanine (MPcs) complexes substituted with octakis(mercaptopropylisobutyl-POSS) functional group was achieved. By the reaction of [1-(3-mercapto)propyl-3,5,7,9,11,13,15-isobutylpentacyclo[9.5.1.1(3,9).1(5,15).1(7,13)]octasiloxane 1 with 4,5-dichloro-1,2-dicyanobenzene 2 in THF as the solvent in the presence of K2CO3 as the base, the phthalonitrile derivative 3 was synthesized. Compound 3 reacted with CoCl2 x 6H2O in ethylene glycol to furnish a novel cobalt(II) phthalocyanine . The tetramerization of 3 with urea and CuCl in the absence of solvent gave the novel Cu(II) phthalocyanine 4; while with Zn(OAc)2 x 2H2O in dry DMF gave the novel zinc(ii) phthalocyanine 6. The structures of the target compounds were confirmed by elemental analysis, UV/VIS, IR, MALDI-TOF MS and 1H NMR spectra. Nonlinear absorptions of MPcs in chloroform solution were investigated by using Z-scan measurement technique with 4 ns pulses at 532 nm wavelength. While CuPc 5 showed very high nonlinear absorption, MPcs 4 and 6 did not show considerable nonlinear absorption. Investigations of optical limiting properties of 5 revealed that this material is a very good candidate for optical limiting applications.

Nonlinear and saturable absorption characteristics of amorphous InSe thin films

We prepared very thin amorphous InSe films and investigated the thickness dependence of the nonlinear absorption by pump-probe and open aperture Z-scan techniques. While thinner films (20 and 52 nm) exhibit saturable absorption, thicker films (70 and 104 nm) exhibit nonlinear absorption for 4 ns, 65 ps, and 44 fs pulse durations. This behavior is attributed to increasing localized defect states in the energy band gap as the film thickness increases. We developed a theoretical model incorporating one photon, two photon, and free carrier absorptions and their saturations to derive the transmission in the open aperture Z-scan experiment. The theory of open aperture Gaussian beam Z-scan based on the Adomian decomposition method was used to fit the experimental curves. Nonlinear absorption coefficients along with saturation intensity thresholds were extracted from fitting the experimental results for all pulse durations. The lowest saturation threshold was found about 3×10−3u2002GW/cm2 for 20 nm film thickness wit...

The effect of thickness and/or doping on the nonlinear and saturable absorption behaviors in amorphous GaSe thin films

We investigated the nonlinear and saturable absorption characteristics of very thin amorphous undoped GaSe, Ge (0.01 at.u2009%), and Sn (0.5 at.u2009%) doped GaSe films by pump-probe and open aperture Z-scan techniques. Linear absorption measurements indicate blueshift in energy with increasing film thickness. Thinner films exhibit saturable absorption while thicker films exhibit nonlinear absorption for 4 ns and 65 ps pulse durations. The films exhibit competing effects between nonlinear and saturable absorption. Saturable absorption behavior weakens while nonlinear absorption appears with increasing film thickness. In addition to that, saturable absorption behavior is very sensitive to doping. Doping causes absorption behaviors to appear in thinner films compared to undoped films. These behaviors are attributed to increasing localized defect states with increasing film thickness and doping. To derive the transmission in open aperture Z-scan data, a theoretical model incorporating one photon, two photon, and fre...

The effect of thickness and doping on the nonlinear absorption behaviour of IIIA-VIA group amorphous semiconductor thin films

The nonlinear optical absorption of InSe, GaSe and GaxIn1−xSe amorphous films with varying thickness and doping has been studied by open-aperture Z-scan experiment with 4 ns and 65 ps pulse durations at 1064 nm wavelength and femtosecond pump-probe spectroscopy. Our results show that the dopant and film thickness (from 20 nm to 104 nm) results in switching from saturable absorption to nonlinear absorption for equal input intensities. This behaviour is attributed to increasing localized defect states with increasing film thickness and/or dopant. The experimental curves were fitted to the theory of open aperture Gaussian beam Z-scan based on the Adomian decomposition method incorporating one photon, two photon, and free carrier absorptions and their saturations. By preparing very thin amorphous thin films the saturation threshold has been lowered significantly.

Switching from negative to positive nonlinear absorption in Sn-doped GaSe crystal

25th European Crystallographic Meeting, ECM 25, İstanbul, 2009 Acta Cryst. (2009). A65, s 213 Page s 213 FA2-MS07-P01 Switching from Negative to Positive Nonlinear Absorption in Sn Doped GaSe Crystal. Ayhan Elmalia, Mustafa Yükseka, Mevlüt Karabulutb, G. M. Mamedovb. aDepartment of Engineering Physics, Faculty of Engineering, Ankara University, 06100 Beşevler, Ankara, Turkey. bDepartment of Physics, Kafkas University, 36100 Kars, Turkey. E-mail: elmali@eng.ankara.edu.tr