Myung-Sik Son

Electrical simulation of the flicker in poly-Si TFT-LCD pixels for the large-area and high-quality TFT-LCD development and manufacturing

Simulation of the DC and the millimeter-wave characteristics of 0.1-μm offset Γ-shaped gate InxGa1-xAs/In0.52Al0.48As/GaAs MHEMTs with various InxGa1-xAs channels

Phenomenological monte carlo simulation model for predicting B, BF₂, As, P and Si implant profiles in silicon - based semiconductor device

Effects of the gate recess structure on the DC electrical behavior of 0.1-μm metamorphic high-electron-mobility transistors

Development of physically based 3D computer simulation code TRICSI for ion implantation into crystalline silicon

Optimization of sub-0.1-μm offset Γ-shaped gate MHEMTs for millimeter-wave applications

Effects of silicon-nitride passivation on the electrical behavior of 0.1-μm pseudomorphic high-electron-mobility transistors

Monte Carlo electron beam lithography simulation of sub-0.1-μm T-gate process for millimeter-wave HEMTs considering 50-kV and 100-kV electron beam exposure systems

An Analysis of the Kink Phenomena in GaAs-based Short-gate MHEMTs Using 2D Hydrodynamic Device Simulation(Session A2 Compound Semiconductor Devices I)(2004 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (AWAD 2004))

Effects of the silicon nitride passivation on the DC and RF performance of 0.1 μm pseudomorphic hemts