N. Armour

Liquid Phase Diffusion Growth of SiGe Single Crystals under Magnetic Fields

The manuscript presents the results of a combined experimental and modeling study on the Liquid Phase Diffusion (LPD) growth of single crystal SixGe1-x on Germanium with and with the application of magnetic fields. Although the LPD process is mainly diffusion driven through out the growth period, strong natural thermosolutal convection occurs in the first five hours of growth, and the growth interface is concave to the melt. Applied rotating and static magnetic fields were considered to examine the growth and silicon dissolution processes in the LPD system. Results show that the application of a combined applied magnetic is beneficial.

Numerical simulation of the dissolution process of silicon into germanium melt

Numerical simulations were carried out to study the thermosolutal and flow structures observed in the dissolution experiments of silicon into a germanium melt. In the present model, the computational domain was assumed axisymmetric. Governing equations of the liquid phase (Si-Ge mixture), namely the equations of conservation of mass, momentum balance, energy balance, and solute (species) transport balance were solved using the Stabilized Finite Element Methods (ST-GLS for fluid flow, SUPG for heat and solute transport).