N.-C. Yeh

Surface-Dominated Conduction in a 6 nm thick Bi2Se3 Thin Film

We report a direct observation of surface dominated conduction in an intrinsic Bi(2)Se(3) thin film with a thickness of six quintuple layers grown on lattice-matched CdS (0001) substrates by molecular beam epitaxy. Shubnikov-de Haas oscillations from the topological surface states suggest that the Fermi level falls inside the bulk band gap and is 53 ± 5 meV above the Dirac point, which is in agreement with 70 ± 20 meV obtained from scanning tunneling spectroscopies. Our results demonstrate a great potential of producing genuine topological insulator devices using Dirac Fermions of the surface states, when the film thickness is pushed to nanometer range.

Single-step deposition of high-mobility graphene at reduced temperatures

Current methods of chemical vapour deposition (CVD) of graphene on copper are complicated by multiple processing steps and by high temperatures required in both preparing the copper and inducing subsequent film growth. Here we demonstrate a plasma-enhanced CVD chemistry that enables the entire process to take place in a single step, at reduced temperatures (<420 °C), and in a matter of minutes. Growth on copper foils is found to nucleate from arrays of well-aligned domains, and the ensuing films possess sub-nanometre smoothness, excellent crystalline quality, low strain, few defects and room-temperature electrical mobility up to (6.0±1.0) × 10(4) cm(2) V(-1) s(-1), better than that of large, single-crystalline graphene derived from thermal CVD growth. These results indicate that elevated temperatures and crystalline substrates are not necessary for synthesizing high-quality graphene.

Evidence of Doping-Dependent Pairing Symmetry in Cuprate Superconductors

Scanning tunneling spectroscopy studies reveal long-range spatial homogeneity and predominantly d(x(2)-y(2))-pairing spectral characteristics in under- and optimally doped YBa2Cu 3O (7-delta) superconductors, whereas STS on YBa2(Cu 0.9934Zn 0.0026Mg (0.004))3O (6.9) exhibits microscopic spatial modulations and strong scattering near the Zn or Mg impurity sites, together with global suppression of the pairing potential. In contrast, in overdoped (Y 0.7Ca (0.3))Ba 2Cu 3O (7-delta), (d(x(2)-y(2))+s)-pairing symmetry is found, suggesting significant changes in the superconducting ground state at a critical doping value.

Evidence for Strain-Induced Local Conductance Modulations in Single-Layer Graphene on SiO2

Graphene has emerged as an electronic material that is promising for device applications and for studying two-dimensional electron gases with relativistic dispersion near two Dirac points. Nonetheless, deviations from Dirac-like spectroscopy have been widely reported with varying interpretations. Here we show evidence for strain-induced spatial modulations in the local conductance of single-layer graphene on SiO(2) substrates from scanning tunneling microscopic (STM) studies. We find that strained graphene exhibits parabolic, U-shaped conductance vs bias voltage spectra rather than the V-shaped spectra expected for Dirac fermions, whereas V-shaped spectra are recovered in regions of relaxed graphene. Strain maps derived from the STM studies further reveal direct correlation with the local tunneling conductance. These results are attributed to a strain-induced frequency increase in the out-of-plane phonon mode that mediates the low-energy inelastic charge tunneling into graphene.

Competing weak localization and weak antilocalization in ultrathin topological insulators.

We demonstrate evidence of a surface gap opening in topological insulator (TI) thin films of (Bi(0.57)Sb(0.43))(2)Te(3) below six quintuple layers through transport and scanning tunneling spectroscopy measurements. By effective tuning the Fermi level via gate-voltage control, we unveil a striking competition between weak localization and weak antilocalization at low magnetic fields in nonmagnetic ultrathin films, possibly owing to the change of the net Berry phase. Furthermore, when the Fermi level is swept into the surface gap of ultrathin samples, the overall unitary behaviors are revealed at higher magnetic fields, which are in contrast to the pure WAL signals obtained in thicker films. Our findings show an exotic phenomenon characterizing the gapped TI surface states and point to the future realization of quantum spin Hall effect and dissipationless TI-based applications.

Effects of lattice distortion and Jahn-Teller coupling on the magnetoresistance of La0.7Ca0.3MnO3 and La0.5Ca0.5CoO3 epitaxial films

Studies of La0.7Ca0.3MnO3 epitaxial films on substrates with a range of lattice constants reveal two dominant contributions to the occurrence of colossal negative magnetoresistance (CMR) in these manganites: at high temperatures (T → TC, TC being the Curie temperature), the magnetotransport properties are predominantly determined by the conduction of lattice polarons, while at low temperatures (T ≪ TC/, the residual negative magnetoresistance is correlated with the substrate-induced lattice distortion which incurs excess magnetic domain wall scattering. The importance of lattice polaron conduction associated with the presence of Jahn–Teller coupling in the manganites is further verified by comparing the manganites with epitaxial films of another ferromagnetic perovskite, La0.5Ca0.5CoO3. Regardless of the differences in the substrate-induced lattice distortion, the cobaltite films exhibit much smaller negative magnetoresistance, which may be attributed to the absence of Jahn–Teller coupling and the high electron mobility that prevents the formation of lattice polarons. We therefore suggest that lattice polaron conduction associated with the Jahn–Teller coupling is essential for the occurrence of CMR, and that lattice distortion further enhances the CMR effects in the manganites.

Tunneling evidence of half-metallicity in epitaxial films of ferromagnetic perovskite manganites and ferrimagnetic magnetite

Direct evidence of half-metallic density of states is observed by scanning tunneling spectroscopy of ferromagnetic La0.7Ca0.3MnO3 and La1−xSrxMnO3 (x=0.3, 0.33) epitaxial films which exhibit colossal magnetoresistance (CMR). At 77 K, well below the Curie temperatures, the normalized tunneling conductance (dI/dV)/〈I/V〉 for all samples exhibits similar pronounced peak structures, consistent with the spin-split density of states spectra for the itinerant bands in the ferromagnetic state. The exchange energy splitting between the majority and minority spins, as well as an apparent energy gap near the Fermi level, show variations with the chemical composition and the temperature. For comparison, the tunneling spectrum of a half-metallic ferrimagnet Fe3O4 is also studied. The characteristic spin-split density of states spectrum is observed, and the similarities and differences of Fe3O4 compared with the perovskite manganites are discussed.

Spectroscopic evidence for anisotropic s-wave pairing symmetry in MgB2

Scanning tunneling spectroscopy of superconducting MgB2 (T-c = 39 K) were studied on high-density pellets and c-axis oriented films. The sample surfaces were chemically etched to remove surface carbonated, and hydroxides, and the data were compared with calculated spectra for all symmetry-allowed pairing channels. The pairing potential (Delta(k)) is best described by an anisotropic s-wave pairing model, with Delta(k) = Delta(xy) sin(2)theta(k) +Delta(z) cos(2)theta(k), where theta(k) is the angle relative to the crystalline c-axis, Delta(z) similar to 8.0 meV, and Delta(xy) similar to 5.0 meV.

Strain-induced pseudo-magnetic fields and charging effects on CVD-grown graphene

Atomically resolved imaging and spectroscopic characteristics of graphene grown by chemical vapor deposition (CVD) on copper are investigated by means of scanning tunneling microscopy and spectroscopy (STM/STS). For CVD-grown graphene remaining on the copper substrate, the monolayer carbon structures exhibit ripples and appear strongly strained, with different regions exhibiting different lattice structures and electronic density of states (DOS). In particular, ridges appear along the boundaries of different lattice structures, which exhibit excess charging effects. Additionally, the large and non-uniform strain induces pseudo-magnetic field up to ~ 50 T, as manifested by the DOS peaks at quantized energies that correspond to pseudo-magnetic field-induced integer and fractional Landau levels. In contrast, for graphene transferred from copper to SiO_2 substrates after the CVD growth, the average strain on the whole diminishes, so do the corresponding charging effects and pseudo-magnetic fields except for sample areas near topological defects. These findings suggest feasible nano-scale “strain engineering” of the electronic states of graphene by proper design of the substrates and growth conditions.

Measurement of a Sign-Changing Two-Gap Superconducting Phase in Electron-Doped Ba(Fe_(1-x)Co_x)_2As_2 Single Crystals Using Scanning Tunneling Spectroscopy

Scanning tunneling spectroscopic studies of Ba(Fe(1-x)Co(x))(2)As(2) (x=0.06, 0.12) single crystals reveal direct evidence for predominantly two-gap superconductivity. These gaps decrease with increasing temperature and vanish above the superconducting transition T(c). The two-gap nature and the slightly doping- and energy-dependent quasiparticle scattering interferences near the wave vectors (±π, 0) and (0, ±π) are consistent with sign-changing s-wave superconductivity. The excess zero-bias conductance and the large gap-to-T(c) ratios suggest dominant unitary impurity scattering.