N. Chaaben

GaN growth on porous silicon by MOVPE

Abstract GaN films have been grown at 1050 °C on porous silicon (PS) substrates by metalorganic vapour phase epitaxy. The annealing phase of PS has been studied in temperature range from 300 to 1000 °C during 10 min under a mixture of ammonia (NH 3 ) and hydrogen (H 2 ). The PS samples were characterized after annealing by scanning electronic microscope (SEM). We observed that the annealing under the GaN growth conditions does not affect the porous structure. For the growth of the active GaN layer we used a thin AlN layer in order to improve wetting between GaN and PS/Si substrate. The growth of AlN and GaN films was controlled by laser-reflectometry. We estimated the porosity of PS samples from the evolution of the reflectivity signal during the AlN growth. The crystalline quality and surface morphology of GaN films were determined by X-ray diffraction and SEM, respectively. Preferential growth of hexagonal GaN with (0002) direction is observed and is clearly improved when the thickness of AlN layer increases. Epitaxial GaN layers were characterized by photoluminescence.