N. D. Il’inskaya

High-power picosecond and femtosecond pulse generation from a two-section mode-locked quantum-dot laser

We demonstrate mode locking in a two-section quantum-dot laser that produces output powers up to 45 mW at 1260 nm. The pulse duration could be varied from 2 ps to as short as 400 fs at the 21 GHz pulse repetition rate.

High‐power buried InGaAsP/GaAs (λ=0.8 μm) laser diodes

Buried InGaAsP/GaAs (λ=0.78 μm) separate confinement‐single quantum well laser diodes have been prepared and studied for the first time. It has been shown that a stable far field pattern can be observed even at 500 mW continuous wave (cw) output power for diodes with active region width of about 7 μm, and single zero‐mode operation has been obtained up to 170 mW cw for diodes with a width of 3.8 μm. Mirror facet overheating for the diodes studied was an order of magnitude less than that for similar AlGaAs/GaAs diodes.

Sources of spontaneous emission based on indium arsenide

The results obtained for light-emitting diodes based on heterostructures that contain InAs in the active region and are grown by the methods of liquid-phase, molecular-beam, and vapor-phase epitaxy from organometallic compounds are reviewed. The emission intensity, the near-field patterns, and the light-current and current-voltage characteristics of light-emitting diodes that have flip-chip structure or feature a point contact are analyzed.

Experimental Demonstration of Reduced Light Absorption by Intracavity Metallic Layers in Tamm Plasmon-based Microcavity

We demonstrate experimentally a microcavity based on SiO2/TiO2 with two gold layers directly attached to the central base of the microcavity. The design of optical modes based on the peculiarities of Tamm plasmons provides reduced absorption due to the fixing of the node of the electric field of optical mode to metallic layers. Experimentally measured reflection and transmission spectra exhibits three features, corresponding to three hybrid modes of the microcavity. The widths of spectral features confirm that absorption of light by metallic layers is vanishing for optimized mode. The latter is confirmed by resonant transmission of light through the structure. In case of the laser structure, two intracavity metallic layers could serve as contacts for electrical pumping.

Room-temperature broadband InAsSb flip-chip photodiodes with λcut off = 4.5 μm

Equilibrium and nonequilibrium IR images of p-InAsSbP/n-InAsSb/n+-InAs photodiodes including the images obtained in the electroluminescence and negative luminescence modes have been analyzed. The contact reflectivity has been evaluated. The influence of the substrate’s doping level and mesa depth on the quantum efficiency and sensitivity of a backside illuminated photodiode sensitive in the 2.7–4.5 μm range is discussed.

Flip-chip LEDs with deep mesa emitting at 4.2 µm

The spectral, current-voltage, and emission-current characteristics under forward and reverse biases, and the near-field emission pattern of flip-chip LEDs based on heterostructures with an InAsSb active layer (emission wavelength of 4.2 µm at 300 K) and a mesa of 40–50 µm in depth and 240 µm in diameter are analyzed. The possibility of raising the emission output by varying the configuration of the structure and selecting the optimal operation mode dependently on the working temperature are discussed.

Excess leakage currents in high-voltage 4H-SiC Schottky diodes

The high-voltage 4H-SiC Schottky diodes are fabricated with a nickel barrier and a guard system in the form of “floating” planar p-n junctions. The analysis of I–V characteristics measured in a wide temperature range shows that the forward current is caused by thermionic emission; however, the current is “excessive” in the reverse direction. It is assumed that the reverse current flows locally through the points of the penetrating-dislocation outcrop to the Ni-SiC interface. The shape of reverse I–V characteristics makes it possible to conclude that the electron transport is governed by the monopolar-injection mechanism (the space-charge limited current) with participation of capture traps.

Infrared whispering-gallery-mode lasers (λ= 2.4 μm) with convex disk cavity operating at room temperature

A whispering gallery mode (WGM) semiconductor laser with a convex disk cavity operating at room temperature in the middle-IR range (λ = 2.4 μm) has been created for the first time. The convex cavity was formed by etching in a specially selected CrO3-HF-H2O mixture. The room-temperature emission spectra have been measured. The laser generates WGMs at room temperature in a pulsed regime.

Highly sensitive submillimeter InSb photodetectors

Submillimeter photoconductivity of the electron gas in bulk InSb has been studied. A new design of the InSb photodetector in the form of planar coils with a length-to-width ratio of two orders of magnitude is suggested. This design enables fabrication of highly sensitive photodetectors with the responsivity peak tunable by magnetic field.

Experimental 4H-SiC junction-barrier Schottky (JBS) diodes

Abstract4H-SiC junction-barrier Schottky (JBS) diodes have been fabricated with local p–n junctions under the Schottky contact formed by nonequilibrium diffusion of boron. Static and dynamic characteristics of the JBS diodes are compared with those of similar 4H-SiC Schottky diodes. It is shown that, compared with ordinary Schottky diodes, the JBS diodes have leakage currents that are, on average, a factor of 200 lower at the same reverse bias. The reverse recovery charge is the same for both types of diodes and equal to the charge of majority carriers removed from the n-type base region in switching.