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Featured researches published by N. E. Sluchanko.


Jetp Letters | 2014

Anomalous spin relaxation and quantum criticality in Mn1 − xFexSi solid solutions

S. V. Demishev; A. N. Samarin; V. V. Glushkov; M. I. Gilmanov; I. I. Lobanova; N. A. Samarin; A. V. Semeno; N. E. Sluchanko; N. M. Chubova; V. A. Dyadkin; S. V. Grigoriev

We report results of the high frequency (60 GHz) electron spin resonance (ESR) study of the quantum critical metallic system Mn1 − xFexSi. The ESR is observed for the first time in the concentration range 0 < x < 0.24 at temperatures up to 50 K. The application of the original experimental technique allowed carrying out line shape analysis and finding full set of spectroscopic parameters, including oscillating magnetization, line width and g factor. The strongest effect of iron doping consists in influence on the ESR line width and spin relaxation is marked by both violation of the classical Korringa-type relaxation and scaling behavior. Additionally, the non-Fermi-liquid effects in the temperature dependence of the ESR line width, which may be quantitatively described in the theory of Wölfle and Abrahams, are observed at quantum critical points x* ∼ 0.11 and xc ∼ 0.24.


Journal of Non-crystalline Solids | 1987

The bulk amorphous A3B5 semiconductor: Technological and physical aspects

Sergei V. Demishev; Yu.V. Kosichkin; A. G. Lyapin; N. E. Sluchanko; M.M. Aleksandrova; V. I. Larchev; S. V. Popova; G. G. Skrotskaya

Abstract Electrophysical properties of the bulk amorphous A 3 B 5 semiconductor a-GaSb are studied for the first time. It is shown that in amorphous-crystalline gallium antimonide system a metal-insulator transition can be induced as the content of the amorphous phase increases gradually. Analysis of the relaxation of electrical conductivity demonstrated the complex nature of amorphous phase in GaSb which can be subdivided into some units.


Journal of Physics: Condensed Matter | 1993

An enhanced superconductivity in the supersaturated Al-Si solid solutions

V. V. Brazhkin; V. V. Glushkov; Sergei V. Demishev; Yu V Kosichkin; N. E. Sluchanko; A. I. Shul'gin

The Al LII-III X-ray emission spectra, galvanomagnetic properties and superconductive-state parameters were investigated in supersaturated Al1-xSix: FCC solid solutions obtained by a high-pressure treatment (P<8.0 GPa). A drastic decrease in the charge carrier mobility and an anomalous behaviour of the hole concentration were found. The previous model which was used to describe the superconducting properties of Al-Si is reviewed, Anomalous galvanomagnetic properties and enhancement of the value of the superconducting temperature Tc are assumed to be connected with the local soft regions in the vicinity of the lattice instability.


Physics-Uspekhi | 1994

Amorphous semiconductors prepared by quenching under high pressure

Sergei V. Demishev; Yu. V. Kosichkin; N. E. Sluchanko; A. G. Lyapin


Journal of Experimental and Theoretical Physics | 1993

Raman scattering in amorphous gallium antimonide

Sergei V. Demishev; Yu. V. Kosichkin; A. G. Lyapin; N. N. Mel'nik; D. V. Nekhaev; N. E. Sluchanko; O. A. Turok


Journal of Experimental and Theoretical Physics | 1993

Crystallization of metastable phases and superconductivity in amorphous gallium antimonide

Sergei V. Demishev; Yu. V. Kosichkin; N. E. Sluchanko; M. S. Sharambeyan; A. G. Lyapin; D. Parsons


Physics of the Solid State | 1993

Hall effect in Al1−xSix solid solutions

V. V. Brazhkin; V. V. Glushkov; Sergei V. Demishev; Yu. V. Kosichkin; N. E. Sluchanko; A. I. Shul'gin; A. Tybulewicz


Soviet physics, JETP | 1992

Metal-insulator transition in a-GaSb:Cu

V. V. Brazhkin; Sergei V. Demishev; Yu. V. Kosichkin; A. G. Lyapin; N. E. Sluchanko; S. V. Frolov; M. S. Sharambeyan; S. Torstveit


Soviet physics, JETP | 1991

The metal-insulator transition in amorphous gallium antimonide

Sergei V. Demishev; Yu. V. Kosichkin; D. G. Lunts; A. G. Lyapin; N. E. Sluchanko; M. S. Sharambeyan; F. J. Crowne


Jetp Letters | 1988

Low-temperature anomalies in the magnetoelectric properties of amorphous gallium antimonide

Sergei V. Demishev; Yu V Kosichkin; A. G. Lyapin; N. E. Sluchanko

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Sergei V. Demishev

Russian Academy of Sciences

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A. G. Lyapin

Russian Academy of Sciences

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A. N. Samarin

Russian Academy of Sciences

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A. V. Semeno

Russian Academy of Sciences

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I. I. Lobanova

Russian Academy of Sciences

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M. I. Gilmanov

Russian Academy of Sciences

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N. A. Samarin

Russian Academy of Sciences

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S. V. Demishev

Moscow Institute of Physics and Technology

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S. V. Grigoriev

Petersburg Nuclear Physics Institute

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