N. Holonyak

Impurity-disordered, coupled-stripe AlxGa1−xAs-GaAs quantum well laser

Continuous room‐temperature operation of impurity‐disordered, coupled‐stripe Al x Ga1−x As‐GaAs quantum wellheterostructure lasers is described. Silicon (donor) diffusion at 850u2009°C is used to produce layer disordering and index guiding, in addition to providing carrier confinement in a ten‐stripe coupled array (8‐μm‐wide stripes on 10‐μm centers).

cw room‐temperature operation of GaAlAs single quantum well visible (7300 Å) diode lasers at 100 mW

100‐mW room‐temperature cw laser operation at 7300 A has been achieved in a Ga1−xAlxAs (x∼0.22), ∼300 A thick, single quantum well double heterostructure diode grown by organometallic vapor phase epitaxy. The proton‐delineated stripe contact is 6 μm wide, and the front and rear laser facets are coated for antireflection and high reflection respectively. The cw threshold current is 86 mA for a 250‐μm‐long device, and linear output power versus current characteristics are observed up to 100 mW with an external differential quantum efficiency of 1 W/A (59%). cw output power exceeds 13 mW at 100u2009°C. Between 25–55u2009°C, the pulsed threshold current varies exponentially with temperature T as exp(T/T0), where T0∼187 K.

Photopumped low threshold Alx″Ga1−x″As ‐Alx′Ga1−x′As‐AlxGa1−xAs (x″∼0.85, x′∼0.3, x=0) single quantum well lasers

Data are presented showing that it is possible to photopump and operate a quantum well heterostructure laser at equivalent current densities (J/sub eq/) as low as 70 A/cm/sup 2/. Continuous 300-K laser operation of a single 60-A GaAs (x = 0) quantum well in the center of a approx.0.12-..mu..m-thick xapprox.0.30 Al/sub x/Ga/sub 1-x/As waveguide (and carrier reservoir), which is confined by xapprox.0.85 Al/sub x/Ga/sub 1-x/As layers, is demonstrated at I/sub eq/approx.0.4 mA (168 W/cm/sup 2/, J/sub eq/approx.70 A/cm/sup 2/). These quantum well heterostructures are grown by organometallic vapor phase epitaxy.Data are presented showing that it is possible to photopump and operate a quantum well heterostructure laser at equivalent current densities (Jeq) as low as 70 A/cm2. Continuous 300‐K laser operation of a single 60‐A GaAs (x=0) quantum well in the center of a ∼0.12‐μm‐thick x′∼0.30 Alx′Ga1−x′As waveguide (and carrier reservoir), which is confined by x″∼0.85 Alx″Ga1−x″As layers, is demonstrated at Ieq∼0.4 mA (168 W/cm2, Jeq∼70 A/cm2). These quantum well heterostructures are grown by organometallic vapor phase epitaxy.

High‐energy (λ≲7300 Å) 300 K operation of single‐ and multiple‐stripe quantum‐well heterostructure laser diodes in an external grating cavity

A set of high performance single‐ and multiple‐stripe Alx′Ga1−x′As ‐AlxGa1−xAs quantum‐well heterostructure (QWH) laser diodes coupled to an external grating cavity is used to demonstrate the tuning properties of a semiconductor laser at short wavelength (λ≲7300 A). A single‐stripe laser diode (6‐μm stripe width) with a single AlxGa1−xAs (x∼0.22) quantum well of size Lz≊400 A is broadly tunable (7080≤λ≤7370 A, Δℏω∼70 meV) and delivers a single dominant longitudinal mode of moderate output power (Pout∼50 mW at 200 mA, pulsed). In continuous (cw) operation (I=135 mA) a single‐stripe laser has a 36‐meV tuning range, 7168≤λ≤7322 A. Phase‐locked twenty‐ and forty‐stripe diodes (3.5‐μm stripe width) from the same QWH wafer are capable of single‐longitudinal‐mode output at higher power (peak Pout∼1.6 W at a 8.0‐A, 200‐ns pulse) although at slightly longer wavelength and reduced tuning range (7225≤λ≤7425 A). Data are presented illustrating the wavelength dependence of the gain and power output as well as the part...