N. I. Sinitsyn

ELECTRON FIELD EMISSION FROM NANOFILAMENT CARBON FILMS

Abstract Considerable field emission has been observed from the surface of nanofilament carbon structure films on various substrates (Si, quartz, glass): the density of emission current was up to 1 A/cm 2 while the electric field was about 100 V/μm. The ‘reconstruction’ and ‘inversion’ effects of field emission have also been observed on some structures after current breakdown.

Field emitter arrays on nanotube carbon structure films

We present the finding of newly performed experiments of considerable field emission from the films consisting of nanotube carbon structures. Density of emission current was up to 1–3 A/cm2, while in 20–100 V/μm electric field it was 0.1–1 mA/mm2.

Thin films consisting of carbon nanotubes as a new material for emission electronics

The investigation results for the emission characteristics of thin films composed of nanotube carbon structures are described. These films are shown to provide high field electron emission and substantial thermal electron emission even at low temperatures. They exhibit low electron work functions and ensure stable field emission under conditions of operating vacuum.

Influence of external factors on electron field emission from thin‐film nanofilament carbon structures

The influence of temperature and residual gas pressure on the field emission of thin‐film nanotube carbon structures has been studied. These structures are shown to exhibit low work functions. They are promising for fabrication of effective low‐voltage field emitters and low‐temperature thermal emitters.

Ponderomotive forces effect on the field emission of carbon nanotube films

Abstract This paper presents theoretical investigations of the influence of ponderomotive forces on the field emission from aligned carbon nanotube films. The model of vertically aligned nanotubes, regularly arranged in honeycomb order, are used. Various configurations of nanotubes are considered. Computational techniques for this problem are described in detail. A new parameterization for tight-binding Harrison’s model is proposed. Young’s modulus of carbon nanotubes is theoretically estimated. A precise method of field emission current calculations via wave packet scattering simulation is introduced.

New solutions for designing promising devices based on low-voltage field emission from carbon nanostructures

New approaches to the problems of criticality of field emission with respect to the construction and technological factors are analyzed, and examples of their practical application are considered. These approaches provide practical applications of carbon nanotubes and carbonaceous planar-edge field-emission structures in extreme electronics areas.

Modeling and characterization of a slow-wave structure for a sheet-beam sub-THz TWT amplifier

Microfabricated sheet-beam traveling-wave tubes for THz and sub-THz operation have attracted a considerable interest. In this paper we discuss design issues of a double-vane slow-wave structure (SWS) for a 0.2 THz amplifier. A fast and accurate code for calculation of electrodynamic characteristics of the SWS is developed.

Two‐stage distributed amplifier on field emitter arrays

A two‐stage distributed microwave amplifier with field emitter arrays is analyzed. It is shown to be capable of operating in the millimeter wavelength band and to provide better performance as compared with reported amplifier designs.

Fundamental and applied directions of field emission electronics using nanocluster carbon materials

Fundamental and applied directions of field emission electronics on the base of carbon nanocluster materials are considered. The emission properties of thin films composed of nanotube and nanocluster carbon structures are described. Potentials for their improvement on the path to apply them in various electronic devices are discussed.

Analysis of the possibility of performing microelectronic microwave vacuum devices with extended interaction on field emitter arrays

The possibility of microminiature microwave vacuum devices with extended interaction to be designed on the base of field emitter arrays is considered theoretically. The optimal designs of planar slow‐wave systems on dielectric substrates and of edge field emitter arrays electron guns for such systems are defined. High coupling resistances achieved in the above structures with low acceleration voltages in a wide frequency range and electron beams formed with suitable electron trajectory spread prove the assimilation of microwave range to be possible by such devices, including the millimeter‐wavelength band.