N. Koteeswara Reddy

Microstructure dependent physical properties of evaporated tin sulfide films

In the field of photovoltaics, semiconductors of the III-V group such as GaAs and InP have been considered as the most efficient absorber materials due to their direct energy band gap and high mobility. In these compounds, arsenic and phosphorus are highly toxic and expensive. In this work we present systematic preparation of low cost SnS thin films and characterize these films to test their suitability for photovoltaic applications. We have observed that the films (with thickness ≅0.5μm) grown at the substrate temperature of 275°C exhibit a low resistive single SnS phase and have a direct optical band gap of 1.35eV with an absorption coefficient of ∼105cm−1. SnS films could be alternative semiconductor materials as absorbers for the fabrication of photovoltaic devices.

Behavior of n-ZnO nanorods/p-Si heterojunction devices at higher temperatures

This work explores the temperature dependent heterojunction behavior of n-type zinc oxide (ZnO) nanorods/ZnO∕p-Si diodes. The as-grown ZnO nanorod structures on ZnO coated p-Si substrates are single crystalline and grown along the [001] direction. The p-n diode showed an excellent stability over the temperature range of 20–150°C due to highly doped p-type Si substrate. The turn-on and breakdown voltage of the device slightly decreased with an increase of temperature whereas the saturation current of the device increased from 0.42to0.67μA. The device behavior at different temperatures in forward as well as reverse biased conditions are studied and reported.

Influence of annealing on physical properties of evaporated SnS films

The effect of annealing on the composition, crystal structure, surface features and electro-optical properties of tin mono-sulfide (SnS) films, deposited by thermal evaporation at

Temperature-dependent structural and optical properties of SnS films

300^\circ C

Low Resistive Micrometer-Thick SnS : Ag Films for Optoelectronic Applications

, has been studied. Elemental analysis of the films shows sulfur deficiency, which increases at higher annealing temperatures

Thickness Effect on the Physical Properties of Evaporated SnS Films

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Ohmic contacts to SnS films: Selection and estimation of thermal stability

. The SnS structure in the as-deposited and annealed films remains orthorhombic. With an increase in

Review on Tin (II) Sulfide (SnS) Material: Synthesis, Properties, and Applications

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Selection of non-alloyed ohmic contacts for ZnO nanostructure based devices

, the grain size and the surface roughness are reduced. The electrical resistivity also decreases with increasing

Synthesis and Characterization of Nanocrystalline SnS Films Grown by Thermal Evaporation Technique

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