N. Pliatsikas
Aristotle University of Thessaloniki
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Publication
Featured researches published by N. Pliatsikas.
ACS Applied Materials & Interfaces | 2015
Hendrik Faber; Yen-Hung Lin; Stuart Thomas; Kui Zhao; N. Pliatsikas; Martyn A. McLachlan; Aram Amassian; P. Patsalas; Thomas D. Anthopoulos
The use of ultrasonic spray pyrolysis is demonstrated for the growth of polycrystalline, highly uniform indium oxide films at temperatures in the range of 200-300 °C in air using an aqueous In(NO3)3 precursor solution. Electrical characterization of as-deposited films by field-effect measurements reveals a strong dependence of the electron mobility on deposition temperature. Transistors fabricated at ∼250 °C exhibit optimum performance with maximum electron mobility values in the range of 15-20 cm(2) V (-1) s(-1) and current on/off ratio in excess of 10(6). Structural and compositional analysis of as-grown films by means of X-ray diffraction, diffuse scattering, and X-ray photoelectron spectroscopy reveal that layers deposited at 250 °C are denser and contain a reduced amount of hydroxyl groups as compared to films grown at either lower or higher temperatures. Microstructural analysis of semiconducting films deposited at 250 °C by high resolution cross-sectional transmission electron microscopy reveals that as-grown layers are extremely thin (∼7 nm) and composed of laterally large (30-60 nm) highly crystalline In2O3 domains. These unique characteristics of the In2O3 films are believed to be responsible for the high electron mobilities obtained from transistors fabricated at 250 °C. Our work demonstrates the ability to grow high quality low-dimensional In2O3 films and devices via ultrasonic spray pyrolysis over large area substrates while at the same time it provides guidelines for further material and device improvements.
Science of The Total Environment | 2015
K. Simeonidis; E. Kaprara; Theodoros Samaras; M. Angelakeris; N. Pliatsikas; G. Vourlias; Manassis Mitrakas; N. Andritsos
The potential of magnetite nanoparticles to be applied in drinking water treatment for the removal of hexavalent chromium is discussed. In this study, a method for their preparation which combines the use of low-cost iron sources (FeSO4 and Fe2(SO4)3) and a continuous flow mode, was developed. The produced magnetite nanoparticles with a size of around 20 nm, appeared relatively stable to passivation providing a removal capacity of 1.8 μg Cr(VI)/mg for a residual concentration of 50 μg/L when tested in natural water at pH7. Such efficiency is explained by the reducing ability of magnetite which turns Cr(VI) to an insoluble Cr(OH)3 form. The successful operation of a small-scale system consisting of a contact reactor and a magnetic separator demonstrates a way for the practical introduction and recovery of magnetite nanoparticles in water treatment technology.
Beilstein Journal of Nanotechnology | 2015
Anna Pappa; Varvara Karagkiozaki; Silke Krol; S. Kassavetis; Dimitris M. Konstantinou; C. Pitsalidis; Lazaros Tzounis; N. Pliatsikas; S. Logothetidis
Summary Electrospun nanofibrous scaffolds have been extensively used in several biomedical applications for tissue engineering due to their morphological resemblance to the extracellular matrix (ECM). Especially, there is a need for the cardiovascular implants to exhibit a nanostructured surface that mimics the native endothelium in order to promote endothelialization and to reduce the complications of thrombosis and implant failure. Thus, we herein fabricated poly-ε-caprolactone (PCL) electrospun nanofibrous scaffolds, to serve as coatings for cardiovascular implants and guide tissue regeneration. Oxygen plasma treatment was applied in order to modify the surface chemistry of the scaffold and its effect on cell attachment and growth was evaluated. The conditions of the surface modification were properly adjusted in order to define those conditions of the treatment that result in surfaces favorable for cell growth, while maintaining morphological integrity and mechanical behavior. Goniometry (contact angle measurements), scanning electron microscopy (SEM), atomic force microscopy (AFM), and X-ray photoelectron spectroscopy (XPS) measurements were used to evaluate the morphological and chemical changes induced by the plasma treatment. Moreover, depth-sensing nanoindentation was performed to study the resistance of the plasma-treated scaffolds to plastic deformation. Lastly, the cell studies indicated that all scaffolds were cytocompatible, with the plasma-treated ones expressing a more pronounced cell viability and adhesion. All the above findings demonstrate the great potential of these biomimetic tissue-engineering constructs as efficient coatings for enhanced compatibility of cardiovascular implants.
Applied Physics Letters | 2014
Stuart Thomas; George Adamopoulos; Yen-Hung Lin; Hendrik Faber; Labrini Sygellou; Emmanuel Stratakis; N. Pliatsikas; P. Patsalas; Thomas D. Anthopoulos
We report on thin-film transistors based on Ga2O3 films grown by ultrasonic spray pyrolysis in ambient atmosphere at 400–450 °C. The elemental, electronic, optical, morphological, structural, and electrical properties of the films and devices were investigated using a range of complementary characterisation techniques, whilst the effects of post deposition annealing at higher temperature (700 °C) were also investigated. Both as-grown and post-deposition annealed Ga2O3 films are found to be slightly oxygen deficient, exceptionally smooth and exhibit a wide energy bandgap of ∼4.9 eV. Transistors based on as-deposited Ga2O3 films show n-type conductivity with the maximum electron mobility of ∼2 cm2/V s.
Science Advances | 2017
Hendrik Faber; Satyajit Das; Yen-Hung Lin; N. Pliatsikas; Kui Zhao; Thomas Kehagias; G. P. Dimitrakopulos; Aram Amassian; P. Patsalas; Thomas D. Anthopoulos
Engineering of solution-grown metal oxide heterointerfaces presents an alternative strategy for thin-film transistor development. Thin-film transistors made of solution-processed metal oxide semiconductors hold great promise for application in the emerging sector of large-area electronics. However, further advancement of the technology is hindered by limitations associated with the extrinsic electron transport properties of the often defect-prone oxides. We overcome this limitation by replacing the single-layer semiconductor channel with a low-dimensional, solution-grown In2O3/ZnO heterojunction. We find that In2O3/ZnO transistors exhibit band-like electron transport, with mobility values significantly higher than single-layer In2O3 and ZnO devices by a factor of 2 to 100. This marked improvement is shown to originate from the presence of free electrons confined on the plane of the atomically sharp heterointerface induced by the large conduction band offset between In2O3 and ZnO. Our finding underscores engineering of solution-grown metal oxide heterointerfaces as an alternative strategy to thin-film transistor development and has the potential for widespread technological applications.
Nanotechnology | 2015
Nikolaos T. Panagiotopoulos; N. Kalfagiannis; K C Vasilopoulos; N. Pliatsikas; S. Kassavetis; G. Vourlias; M A Karakassides; P. Patsalas
Perhaps the simplest method for creating metal nanoparticles on a substrate is by driving their self-assembly with the thermal annealing of a thin metal film. By properly tuning the annealing parameters one hopes to discover a recipe that allows the pre-determined design of the NP arrangement. However, thermal treatment is known for detrimental effects and is not really the manufacturers route of choice when it comes to large-scale applications. An alternative method is the use of microwave annealing, a method that has never been applied for metal processing, due to the high reflectance of microwave radiation at the surface of a metal. However, in this work we challenge the widely used nanostructuring methods by proving the microwaves annealing ability to produce plasmonic templates, out of extremely thin metal films, by simply using a domestic microwave oven apparatus. We show that this process is generic and independent of the deposition method used for the metal and we further quantify the suitability of these plasmonic templates for use in surface-enhanced Raman scattering applications.
Journal of Physics D | 2015
A Siozios; Dc Koutsogeorgis; Elefterios Lidorikis; G. P. Dimitrakopulos; N. Pliatsikas; G. Vourlias; Th. Kehagias; Ph. Komninou; Wayne Cranton; C. Kosmidis; P. Patsalas
Nanocomposite thin films incorporating silver nanoparticles are emerging as photosensitive templates for optical encoding applications. However, a deep understanding of the fundamental physicochemical mechanisms occurring during laser-matter interactions is still lacking. In this work, the photosensitivity of AlN:Ag plasmonic nanocomposites is thoroughly examined and a series of UV laser annealing parameters, such as wavelength, fluence and the number of pulses are investigated. We report and study effects such as the selective crystallization of the AlN matrix, the enlargement of the Ag nanoparticle inclusions by diffusion of laser-heated Ag and the outdiffusion of Ag to the films surface. Detailed optical calculations contribute to the identification and understanding of the aforementioned physical mechanisms and of their dependency on the laser processing parameters. We are then able to predetermine the plasmonic response of processed AlN:Ag nanocomposites and demonstrate its potential by means of optically encoding an overt or covert cryptographic pattern.
Surface Engineering | 2017
D. Chaliampalias; N. Pliatsikas; E. Pavlidou; K. Kolaklieva; R. Kakanakov; N. Vouroutzis; P. Patsalas; Efstathios K. Polychroniadis; K. Chrissafis; G. Vourlias
The thermal stability and the resistance against oxidation of quaternary compositionally gradient CrAlSiN coatings deposited on steel substrate are investigated by examining their structural, morphological and chemical features before and after oxidation tests, as well as by quantitative thermal analysis. The as-deposited samples exhibit a columnar structure, with each column consisting of nanocrystals as fine as 20 nm. The as-deposited coating is mainly composed of CrxAl1−xN solid solution nanocrystals, which are embedded in an amorphous SiNx matrix. When exposed to high-temperature dry air environment the coated samples exhibit remarkable stability as they remained intact up to 800°C. Over 800°C, elements from the substrate outdiffused and modified the chemical content of the film, but still remain oxidation-resistant up to 900°C.
Surface Engineering | 2018
D. Stathokostopoulos; D. Chaliampalias; N. Pliatsikas; S. Kassavetis; E. Pavlidou; P. Patsalas; S. Logothetidis; K. Chrissafis; G. Vourlias
ABSTRACT Copper is widely applied however its disadvantages such as low hardness and poor oxidation resistance. TiN coatings are often used industrially for overriding such disadvantages of ferrous components. In this examination the deposition of TiN on Cu substrates is investigated for the first time by pack cementation process with which one or more elements can be deposited simultaneously by gas and solid-state diffusion reactions. This feature makes this process very attractive for industrial use as it is economic and time saving. Microstructural examination of the deposited samples revealed the formation of thick coatings corresponding to Ti–Cu phases. Focusing on the coating surface it was found that a TiN thin layer is formed. This was verified also from hardness measurements which showed that there was a significant increase of the surface hardness. Furthermore, the oxidation resistance of the coated samples has considerably increased as implied from the thermogravimetric measurements.
Scientific Reports | 2018
S. Dellis; N. Pliatsikas; N. Kalfagiannis; Ortal Lidor-Shalev; A. Papaderakis; G. Vourlias; S. Sotiropoulos; Dc Koutsogeorgis; Yitzhak Mastai; P. Patsalas
The fabrication, by an all electrochemical process, of porous Si/ZnO nanostructures with engineered structural defects, leading to strong and broadband deep level emission from ZnO, is presented. Such nanostructures are fabricated by a combination of metal-assisted chemical etching of Si and direct current electrodeposition of ZnO. It makes the whole fabrication process low-cost, compatible with Complementary Metal-Oxide Semiconductor technology, scalable and easily industrialised. The photoluminescence spectra of the porous Si/ZnO nanostructures reveal a correlation between the lineshape, as well as the strength of the emission, with the morphology of the underlying porous Si, that control the induced defects in the ZnO. Appropriate fabrication conditions of the porous Si lead to exceptionally bright Gaussian-type emission that covers almost the entire visible spectrum, indicating that porous Si/ZnO nanostructures could be a cornerstone material towards white-light-emitting devices.