N. Q. Vinh

Coherent control of Rydberg states in silicon

Laser cooling and electromagnetic traps have led to a revolution in atomic physics, yielding dramatic discoveries ranging from Bose–Einstein condensation to the quantum control of single atoms. Of particular interest, because they can be used in the quantum control of one atom by another, are excited Rydberg states, where wavefunctions are expanded from their ground-state extents of less than 0.1 nm to several nanometres and even beyond; this allows atoms far enough apart to be non-interacting in their ground states to strongly interact in their excited states. For eventual application of such states, a solid-state implementation is very desirable. Here we demonstrate the coherent control of impurity wavefunctions in the most ubiquitous donor in a semiconductor, namely phosphorus-doped silicon. In our experiments, we use a free-electron laser to stimulate and observe photon echoes, the orbital analogue of the Hahn spin echo, and Rabi oscillations familiar from magnetic resonance spectroscopy. As well as extending atomic physicists’ explorations of quantum phenomena to the solid state, our work adds coherent terahertz radiation, as a particularly precise regulator of orbitals in solids, to the list of controls, such as pressure and chemical composition, already familiar to materials scientists.

Dielectric spectroscopy of proteins as a quantitative experimental test of computational models of their low-frequency harmonic motions.

Decades of molecular dynamics and normal mode calculations suggest that the largest-scale collective vibrational modes of proteins span the picosecond to nanosecond time scale. Experimental investigation of these harmonic, low-amplitude motions, however, has proven challenging. In response, we have developed a vector network analyzer-based spectrometer that supports the accurate measurement of both the absorbance and refractive index of solvated biomolecules over the corresponding gigahertz to terahertz frequency regime, thus providing experimental information regarding their largest-scale, lowest frequency harmonic motions. We have used this spectrometer to measure the complex dielectric response of lysozyme solutions over the range 65 to 700 GHz and an effective medium model to separate the dielectric response of the solvated protein from that of its buffer. In doing so, we find that each lysozyme is surrounded by a tightly bound layer of 165 ± 15 water molecules that, in terms of their picosecond dynamics, behave as if they are an integral part of the protein. We also find that existing computational descriptions of the proteins dynamics compare poorly with the results of our experiment. Specifically, published normal mode and molecular dynamics simulations do not explain the measured dielectric response unless we introduce a cutoff frequency of 250 GHz below which the density of vibrational modes drops to zero. This cutoff is physically plausible, given the known size of the protein and the known speed of sound in proteins, raising questions as to why it is not apparent in computational models of the proteins motions.

Silicon as a model ion trap: Time domain measurements of donor Rydberg states

One of the great successes of quantum physics is the description of the long-lived Rydberg states of atoms and ions. The Bohr model is equally applicable to donor impurity atoms in semiconductor physics, where the conduction band corresponds to the vacuum, and the loosely bound electron orbiting a singly charged core has a hydrogen-like spectrum according to the usual Bohr–Sommerfeld formula, shifted to the far-infrared because of the small effective mass and high dielectric constant. Manipulation of Rydberg states in free atoms and ions by single and multiphoton processes has been tremendously productive since the development of pulsed visible laser spectroscopy. The analogous manipulations have not been conducted for donor impurities in silicon. Here, we use the FELIX pulsed free electron laser to perform time-domain measurements of the Rydberg state dynamics in phosphorus- and arsenic-doped silicon and we have obtained lifetimes consistent with frequency domain linewidths for isotopically purified silicon. This implies that the dominant decoherence mechanism for excited Rydberg states is lifetime broadening, just as for atoms in ion traps. The experiments are important because they represent a step toward coherent control and manipulation of atomic-like quantum levels in the most common semiconductor and complement magnetic resonance experiments in the literature, which show extraordinarily long spin lattice relaxation times—key to many well known schemes for quantum computing qubits—for the same impurities. Our results, taken together with the magnetic resonance data and progress in precise placement of single impurities, suggest that doped silicon, the basis for modern microelectronics, is also a model ion trap.

Enhanced performance of resonant sub-terahertz detection in a plasmonic cavity

A multi-gate high electron mobility transistor coupled to a log-periodic antenna was engineered to detect sub-terahertz radiation through resonant excitation of plasmon modes in the channel. The device was integrated with a silicon hyper-hemispherical lens in order to enhance radiation collection and eliminate parasitic substrate modes. The continuous detector response spectrum from 185 GHz to 380 GHz indicates the presence of distinct collective plasmonic cavity modes resulting from the quantization of the plasmon wavevector. In a bolometric detection mode, a noise equivalent power of less than 50 pW/Hz1/2 and a responsivity exceeding 100 kV/W have been measured at 11.5 K.

High-precision gigahertz-to-terahertz spectroscopy of aqueous salt solutions as a probe of the femtosecond-to-picosecond dynamics of liquid water

Because it is sensitive to fluctuations occurring over femtoseconds to picoseconds, gigahertz-to-terahertz dielectric relaxation spectroscopy can provide a valuable window into waters most rapid intermolecular motions. In response, we have built a vector network analyzer dielectric spectrometer capable of measuring absorbance and index of refraction in this frequency regime with unprecedented precision. Using this to determine the complex dielectric response of water and aqueous salt solutions from 5.9 GHz to 1.12 THz (which we provide in the supplementary material), we have obtained strong new constraints on theories of waters collective dynamics. For example, while the salt-dependencies we observe for waters two slower relaxations (8 and 1 ps) are easily reconciled with suggestions that they arise due to rotations of fully and partially hydrogen bonded molecules, respectively, the salt-dependence of the fastest relaxation (180 fs) appears difficult to reconcile with its prior assignment to liberations of single hydrogen bonds.

Quantum ratchet effects induced by terahertz radiation in GaN-based two-dimensional structures

Photogalvanic effects are observed and investigated in wurtzite (0001)-oriented GaN/AlGaN low-dimensional structures excited by terahertz radiation. The structures are shown to represent linear quantum ratchets. Experimental and theoretical analysis exhibits that the observed photocurrents are related to the lack of an inversion center in the GaN-based heterojunctions.

Inducing an incipient terahertz finite plasmonic crystal in coupled two dimensional plasmonic cavities.

We measured a change in the current transport of an antenna-coupled, multigate, GaAs/AlGaAs field-effect transistor when terahertz electromagnetic waves irradiated the transistor and attribute the change to bolometric heating of the electrons in the two dimensional electron channel. The observed terahertz absorption spectrum indicates coherence between plasmons excited under adjacent biased device gates. The experimental results agree quantitatively with a theoretical model we developed that is based on a generalized plasmonic transmission line formalism and describes an evolution of the plasmonic spectrum with increasing electron density modulation from homogeneous to the crystal limit. These results demonstrate an electronically induced and dynamically tunable plasmonic band structure.

A terahertz plasmon cavity detector

Sensitivity of a plasmonic detector is enhanced by integrating a broadband log-periodic antenna with a two-dimensional plasma cavity that is defined by source, drain, and multiple gates of a GaAs/AlGaAs high electron mobility transistor. Both narrow-band terahertz detection and a rich harmonic spectrum are evident. With a bolometric sensor in the channel, we report responsivity, on resonance at 235–240 GHz and at 20 K, of up to 7 kV/W and a noise equivalent power of 5×10−10 W/Hz1/2.

Fast detector of the ellipticity of infrared and terahertz radiation based on HgTe quantum well structures

We report a fast, room temperature detection scheme for the polarization ellipticity of laser radiation, with a bandwidth that stretches from the infrared to the terahertz range. The device consists of two elements, one in front of the other, that detect the polarization ellipticity and the azimuthal angle of the ellipse. The elements, respectively, utilize the circular photogalvanic effect in a narrow gap semiconductor and the linear photogalvanic effect in a bulk piezoelectric semiconductor. For the former we characterized both a HgTe quantum well and bulk Te, and for the latter, bulk GaAs. In contrast with optical methods we propose is an easy to handle all-electric approach, which is demonstrated by applying a large number of different lasers from low power, continuous wave systems to high power, pulsed sources.

Terahertz Detection by a Homodyne Field Effect Transistor Multiplicative Mixer

We demonstrate an efficient scheme for mixing and down-conversion of two orthogonally polarized terahertz beams in a field effect transistor at frequencies far above frequencies where the transistor has gain. One signal is applied between gate and source and the other between drain and source. The mixer is a field detector with 960 pW/Hz noise-equivalent power at a local oscillator (LO) power of 8 μW . Orthogonal LO and signal power allows for simple diplexing.