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Dive into the research topics where N. S. Yuksek is active.

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Featured researches published by N. S. Yuksek.


Semiconductor Science and Technology | 2003

Thermally stimulated current analysis of shallow levels in TlGaS2 layered single crystals

N. S. Yuksek; N.M. Gasanly; H. Özkan

We have carried out thermally stimulated current measurements on as-grown TlGaS2 layered single crystals in the temperature range of 10–60 K with various heating rates. We found experimental evidence for the presence of three trapping centres in TlGaS2, located at 6, 12 and 26 meV. We have determined the trap parameters using various methods of analysis, and these agree well with each other. The retrapping process is negligible for these levels, as confirmed by the good agreement between the experimental results and the theoretical predictions of the model that assumes slow retrapping.


Journal of Physics: Condensed Matter | 2002

Temperature-?and excitation intensity-dependent photoluminescence in TlInSeS single crystals

N.M. Gasanly; Atilla Aydinli; N. S. Yuksek

Photoluminescence (PL) spectra of TlInSeS layered single crystals were investigated in the wavelength region 460–800 nm and in the temperature range 10–65 K. We observed one wide PL band centred at 584 nm (2.122 eV) at T = 10 K and an excitation intensity of 7.5 W cm−2. We have also studied the variation of the PL intensity versus excitation laser intensity in the range from 0.023 to 7.5 W cm−2. The red shift of this band with increasing temperature and blue shift with increasing laser excitation intensity was observed. The PL was found to be due to radiative transitions from the moderately deep donor level located at 0.243 eV below the bottom of the conduction band to the shallow acceptor level at 0.023 eV located above the top of the valence band. The proposed energy-level diagram permits us to interpret the recombination processes in TlInSeS layered single crystals.


Materials Research Bulletin | 2003

Thermally stimulated currents in n-InS single crystals

N.M. Gasanly; Atilla Aydinli; N. S. Yuksek

Thermally stimulated current measurements are carried out on as-grown n-InS single crystals in the temperature range of 10–125 K. Experimental evidence is found for four trapping centers present in InS. They are located at 20, 35, 60 and 130 meV. The trap parameters have been determined by various methods of analysis, and they agree well with each other. # 2002 Elsevier Science Ltd. All rights reserved.


Physica B-condensed Matter | 2004

Trapping center parameters of TlGaSe2 layered crystals

N. S. Yuksek; H. Kavas; N.M. Gasanly; H. Özkan


Applied Physics A | 2003

Trapping centers in undoped GaS layered single crystals

N.M. Gasanly; Atilla Aydinli; N. S. Yuksek; Ö. Salihoğlu


Journal of Alloys and Compounds | 2006

Determination of trapping center parameters of Tl2InGaS4-layered crystals by thermally stimulated current measurements

Nader A.P. Mogaddam; N. S. Yuksek; N.M. Gasanly; H. Özkan


Crystal Research and Technology | 2005

Temperature dependence of Raman-active mode frequencies and linewidths in TlGaSe2 layered crystals

N. S. Yuksek; N.M. Gasanly


Journal of Raman Spectroscopy | 2004

Anharmonic line shift and linewidth of the Raman modes in TlInS2 layered crystals

N. S. Yuksek; N.M. Gasanly; Atilla Aydinli


Crystal Research and Technology | 2004

Infrared photoluminescence from TlGaS2 layered single crystals

N. S. Yuksek; N.M. Gasanly; Atilla Aydinli; H. Özkan; M. Acikgoz


Physica Status Solidi (a) | 2004

Thermally stimulated currents in layered Ga4SeS3 semiconductor

S. Aytekin; N. S. Yuksek; M. Goktepe; N.M. Gasanly; Atilla Aydinli

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N.M. Gasanly

Middle East Technical University

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H. Özkan

Middle East Technical University

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H. Kavas

Middle East Technical University

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M. Acikgoz

Middle East Technical University

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Nader A.P. Mogaddam

Middle East Technical University

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