N. Skukan

Direct fabrication of three-dimensional buried conductive channels in single crystal diamond with ion microbeam induced graphitization

Abstract We report on a novel method for the fabrication of three-dimensional buried graphitic micropaths in single crystal diamond with the employment of focused MeV ions. The use of implantation masks with graded thickness at the sub-micrometer scale allows the formation of conductive channels which are embedded in the insulating matrix at controllable depths. In particular, the modulation of the channels depth at their endpoints allows the surface contacting of the channel terminations with no need of further fabrication stages. In the present work we describe the sample masking, which includes the deposition of semi-spherical gold contacts on the sample surface, followed by MeV ion implantation. Because of the significant difference between the densities of pristine and amorphous or graphitized diamond, the formation of buried channels has a relevant mechanical effect on the diamond structure, causing localized surface swelling, which has been measured both with interferometric profilometry and atomic force microscopy. The electrical properties of the buried channels are then measured with a two point probe station: clear evidence is given that only the terminal points of the channels are electrically connected with the surface, while the rest of the channels extends below the surface. IV measurements are employed also to qualitatively investigate the electrical properties of the channels as a function of implantation fluence and annealing.

Electrical stimulation of non-classical photon emission from diamond color centers by means of sub-superficial graphitic electrodes.

Focused MeV ion beams with micrometric resolution are suitable tools for the direct writing of conductive graphitic channels buried in an insulating diamond bulk, as already demonstrated for different device applications. In this work we apply this fabrication method to the electrical excitation of color centers in diamond, demonstrating the potential of electrical stimulation in diamond-based single-photon sources. Differently from optically-stimulated light emission from color centers in diamond, electroluminescence (EL) requires a high current flowing in the diamond subgap states between the electrodes. With this purpose, buried graphitic electrode pairs, 10 μm spaced, were fabricated in the bulk of a single-crystal diamond sample using a 6 MeV C microbeam. The electrical characterization of the structure showed a significant current injection above an effective voltage threshold of 150 V, which enabled the stimulation of a stable EL emission. The EL imaging allowed to identify the electroluminescent regions and the residual vacancy distribution associated with the fabrication technique. Measurements evidenced isolated electroluminescent spots where non-classical light emission in the 560–700 nm spectral range was observed. The spectral and auto-correlation features of the EL emission were investigated to qualify the non-classical properties of the color centers.

An ultra-thin diamond membrane as a transmission particle detector and vacuum window for external microbeams

Several applications of external microbeam techniques demand a very accurate and controlled dose delivery. To satisfy these requirements when post-sample ion detection is not feasible, we constructed a transmission single-ion detector based on an ultra-thin diamond membrane. The negligible intrinsic noise provides an excellent signal-to-noise ratio and enables a hit-detection efficiency of close to 100%, even for energetic protons, while the small thickness of the membrane limits beam spreading. Moreover, because of the superb mechanical stiffness of diamond, this membrane can simultaneously serve as a vacuum window and allow the extraction of an ion microbeam into the atmosphere.

Time of flight elastic recoil detection analysis with a position sensitive detector

A position sensitive detection system based on the microchannel plate detector has been constructed and installed at the existing time of flight (TOF) spectrometer in order to perform a kinematic correction and improve the surface time/depth resolution of elastic recoil detection analysis (ERDA) system. The position resolution of the detector has been tested for different types of ions and anode voltages. TOF spectra of recoiled O ions from SiO(2) and F from CaF(2) were collected in coincidence with position sensitive detector signal. Kinematic correction of TOF spectra improved surface time/depth resolution by approximately 20% for our system; however even higher improvements could be obtained in larger solid angle TOF-ERDA systems.

Formation of buried conductive micro-channels in single crystal diamond with MeV C and He implantation

Abstract As demonstrated in previous works, implantation with a MeV ion microbeam through masks with graded thickness allows the formation of conductive micro-channels in diamond which are embedded in the insulating matrix at controllable depths [P. Olivero et al., Diamond Relat. Mater. 18 (5–8), 870–876 (2009)]. In the present work we report about the systematic electrical characterization of such micro-channels as a function of several implantation conditions, namely: ion species and energy, implantation fluence. The current–voltage (IV) characteristics of the buried channels were measured at room temperature with a two point probe station. Significant parameters such as the sheet resistance and the characteristic exponent (α) of the IV power-law trend were expressed as a function of damage density, with satisfactory compatibility between the results obtained in different implantation conditions.

First Measurement of the 19F(α, p)22Ne Reaction at Energies of Astrophysical Relevance

The observational 19F abundance in stellar environments systematically exceeds the predicted one, thus representing one of the unsolved challenges for stellar modeling. It is therefore clear that further investigation is needed in this field. In this work, we focus our attention on the measurement of the 19F(α, p) 22Ne reaction in the astrophysical energy range, between 0.2 and 0.8 MeV (far below the Coulomb barrier, 3.8 MeV), as it represents the main destruction channel in He-rich environments. The lowest energy at which this reaction has been studied with direct measurements is ∼0.66 MeV, covering only the upper tail of the Gamow window, causing the reaction-rate evaluation to be based on extrapolation. To investigate lower energies, the 19F(α, p) 22Ne reaction has been studied by means of the Trojan horse method, applied to the quasi-free 6Li (19F, p22Ne)2H reaction at Ebeam = 6 MeV. The indirect cross section of the 19F(α, p) 22Ne reaction at energies ≲1 MeV was extracted, fully covering the astrophysical region of interest and overlapping existing direct data for normalization. Several resonances have been detected for the first time inside the Gamow window. The reaction rate has been calculated, showing an increase up to a factor of 4 with respect to the literature at astrophysical temperatures. This might lead to potential major astrophysical implications.

Single-Photon-Emitting Optical Centers in Diamond Fabricated upon Sn Implantation

The fabrication of luminescent defects in single-crystal diamond upon Sn implantation and annealing is reported. The relevant spectral features of the optical centers (emission peaks at 593.5, 620.3, 630.7, and 646.7 nm) are attributed to Sn-related defects through the correlation of their photoluminescence (PL) intensity with the implantation fluence. Single Sn-related defects were identified and characterized through the acquisition of their second-order autocorrelation emission functions, by means of Hanbury-Brown and Twiss interferometry. The investigation of their single-photon emission regime as a function of excitation laser power revealed that Sn-related defects are based on three-level systems with a 6 ns radiative decay lifetime. In a fraction of the studied centers, the observation of a blinking PL emission is indicative of the existence of a dark state. Furthermore, absorption dependence on the polarization of the excitation radiation with ∼45% contrast was measured. This work shed light on th...

Temperature dependent TRIBIC in CZT detectors

Abstract Temperature dependence of the ion beam induced charge (IBIC) collection efficiency was studied in CdZnTe (CZT) in the range 166–330 K. A lateral surface between sputtered Au electrodes of the simple planar counter-grade CZT was irradiated by a focused 3 MeV proton microbeam. Measured charge collection efficiency profiles change with temperature. In order to understand better the charge collection mechanism at different temperatures time resolved ion beam induced charge (TRIBIC) technique was applied as well. Charge transients from the output of the preamplifier recorded by a fast storage oscilloscope showed that the electron transport is strongly influenced by temperature. Both IBIC and TRIBIC measurements showed negligible hole charge collection contribution in the studied detector.

Charge multiplication effect in thin diamond films

Herein, we report on the enhanced sensitivity for the detection of charged particles in single crystal chemical vapour deposition (scCVD) diamond radiation detectors. The experimental results demonstrate charge multiplication in thin planar diamond membrane detectors, upon impact of 18 MeV O ions, under high electric field conditions. Avalanche multiplication is widely exploited in devices such as avalanche photo diodes, but has never before been reproducibly observed in intrinsic CVD diamond. Because enhanced sensitivity for charged particle detection is obtained for short charge drift lengths without dark counts, this effect could be further exploited in the development of sensors based on avalanche multiplication and radiation detectors with extreme radiation hardness.

A gas ionisation detector in the axial (Bragg) geometry used for the time-of-flight elastic recoil detection analysis

In this paper, time-of-flight elastic recoil detection analysis spectrometer with a newly constructed gas ionization detector for energy detection is presented. The detector is designed in the axial (Bragg) geometry with a 3 × 3 array of 50 nm thick Si3N4 membranes as an entrance window. 40 mbar isobutane gas was sufficient to stop a 30 MeV primary iodine beam as well as all recoils in the detector volume. Spectrometer and detector performances were determined showing significant improvement in the mass and energy resolution, respectively, comparing to the spectrometer with a standard silicon particle detector for an energy measurement.