N. V. Melnikova

Influence of the composition on the electrical properties of amorphous chalcogenides AgGe1 + xAs1 − xS3

This article is devoted to the synthesis and examination of the electrical properties of amorphous chalcogenides AgGe1 + xAs1 − xS3 (x = 0.1, 0.4–0.6, 0.9) at low temperatures. The studies are performed in order to obtain materials with improved characteristics (an increase in the fraction of the ionic transfer, a decrease in the temperatures of its emergence, and an increase in conductivity). The synthesized compounds are electron-ion conductors. An increase in the Ge fraction leads to an increase in the temperature corresponding to the onset of ionic transport and to a decrease in conductivity.

Electric properties of Cu-Ag-Ge-As-Se ionic conductors at high pressures

The effect of static pressure on the electric properties of vitreous materials Cu1 − xAgxGeAsSe3, where x = 0.95, 0.9, and 0.85 is studied. The pressure dependences of impedance and dielectric loss tangent at pressures 15–45 GPa are analyzed. The ranges of substantial changes in the electrical properties of the samples are found.

Atomic structure and ionic conductivity of glassy materials based on silver sulfide

The effect of the composition of glassy ionic conductors AgGe1 + xAs1–xS3 and the composites based on these materials containing single-walled carbon nanotubes (CNT) AgGe1+xAs1–x(S + CNT)3, on the atomic structure and ionic conductivity is analyzed.

Effect of high pressures on the electrical properties of the perovskite-like phases of ACu3V4O12

The electrical properties of new perovskite-like compounds ACu3V4O12 (A = Gd, Er, Tm) were studied at high pressures (10–50 GPa). The effect of the composition and structure of the compounds on the baric ranges of substantial changes in the behavior of the electrical characteristics was analyzed.

Influence of high pressure on the electrical properties of amorphous chalcogenides of the Ag-Ge-As-S system

New AgGe1 + xAs1 − xS3 (x = 0.1, 0.4–0.9) silver chalcogenides are synthesized and certified. Their electrical properties are studied at pressures of up to 45 GPa by means of impedance spectroscopy. Regions of significant variations in electrical properties are detected via analysis of an impedance hodograph, the baric dependencies of resistance, and the dielectric loss tangent.

Synthesis of CeCu3–xMnxV4O12 (x = 0–3) at High Pressures and Temperatures

CeCu3–xMnxV4O12 (x = 0–3) with perovskite-like structure are synthesized at high pressures and temperatures. Their crystal structures are characterized by X-ray diffraction (space group Im

Electrical properties and the structure changing of polycrystalline materials from the system Cu-As-Ge-S at high pressure

\bar 3

Influence of external effects on the electrical properties of high pressure perovskite-like phases CaCu3Ti4-xVxO12

3¯, Z = 2). The temperature dependences of their electroresistance are studied.