Namdong Kim

Functionalization of graphene: covalent and non-covalent approaches, derivatives and applications.

Approaches, Derivatives and Applications Vasilios Georgakilas,† Michal Otyepka,‡ Athanasios B. Bourlinos,‡ Vimlesh Chandra, Namdong Kim, K. Christian Kemp, Pavel Hobza,‡,§,⊥ Radek Zboril,*,‡ and Kwang S. Kim* †Institute of Materials Science, NCSR “Demokritos”, Ag. Paraskevi Attikis, 15310 Athens, Greece ‡Regional Centre of Advanced Technologies and Materials, Department of Physical Chemistry, Faculty of Science, Palacky University Olomouc, 17. listopadu 12, 771 46 Olomouc, Czech Republic Center for Superfunctional Materials, Department of Chemistry, Pohang University of Science and Technology, San 31, Hyojadong, Namgu, Pohang 790-784, Korea Institute of Organic Chemistry and Biochemistry, Academy of Sciences of the Czech Republic, v.v.i., Flemingovo naḿ. 2, 166 10 Prague 6, Czech Republic

Charge Transfer Chemical Doping of Few Layer Graphenes: Charge Distribution and Band Gap Formation

The properties of few layer (one layer (1 L) to four layer (4 L)) graphenes doped by adsorption and intercalation of Br(2) and I(2) vapors are investigated. The Raman spectra of the graphene G vibrations are observed as a function of the number of layers. There is no evidence for chemical reaction disrupting the basal plane pi electron conjugation. Adsorption of bromine on 1 L graphene creates a high doped hole density, well beyond that achieved by electrical gating with an ionic polymer electrolyte. In addition, the 2D Raman band is completely quenched. The 2 L bilayer spectra indicate that the doping by adsorbed I(2) and Br(2) is symmetrical on the top and bottom layers. Br(2) intercalates into 3 L and 4 L graphenes. The combination of both surface and interior doping with Br(2) in 3 L and 4 L creates a relatively constant doping level per layer. In contrast, the G spectra of 3 L and 4 L with surface adsorbed I(2) indicate that the hole doping density is larger on the surface layers than on the interior layers and that I(2) does not intercalate into 3 L and 4 L. This adsorption-induced potential difference between surface and interior layers implies that a band gap opens in the bilayer type bands of 3 L and 4 L.

Synthesis and electrical characterization of magnetic bilayer graphene intercalate.

We report synthesis and transport properties of the minimal graphite intercalation compound, a ferric chloride (FeCl(3))(n) island monolayer inside bilayer graphene. Chemical doping by the intercalant is simultaneously probed by micro-Raman spectroscopy and Hall measurements. Quantum oscillations of conductivity originate from microscopic domains of intercalated and unintercalated regions. A slight upturn in resistance related to magnetic transition is observed. Two-dimensional intercalation in bilayer graphene opens new possibilities to engineer two-dimensional properties of intercalates.

Control of the π plasmon in a single layer graphene by charge doping

We report that the behavior of a low-energy π plasmon excitation in a single layer graphene (SLG) can be modified by doping external potassium (K) atoms, a feature demanded to realize the graphene plasmonics. Using high-resolution electron-energy-loss spectroscopy, we find that upon K-doping the π plasmon energy increases by 1.1 eV due to the K-induced electron density up to n = 7 × 1013 cm−2 in SLG. The four modified dispersions for different K-dopings, however, are found to merge into a single universal curve when plotted in the dimensionless coordinates indicating that the unique plasmonic character of SLG is preserved despite the K-dopings.

Kinetic roughening of ion-sputtered Pd(001) surface: beyond the Kuramoto-Sivashinsky model.

We investigate the kinetic roughening of Ar+ ion-sputtered Pd(001) surface both experimentally and theoretically. In situ real-time x-ray reflectivity and in situ scanning tunneling microscopy show that nanoscale adatom islands form and grow with increasing sputter time t. Surface roughness W(t) and lateral correlation length xi(t) follow the scaling laws W(t) approximately t(beta) and xi(t) approximately t(1/z) with the exponents beta approximately 0.20 and 1/z approximately 0.20, for an ion beam energy epsilon=0.5 keV, which is inconsistent with the prediction of the Kuramoto-Sivashinsky (KS) model. We thereby extend the KS model by applying the coarse-grained continuum approach of the Sigmund theory to the order of O(inverted Delta(4),h(2)), where h is the surface height, and derive a new term of the form inverted Delta(2)(inverted Delta h)(2) which plays a decisive role in describing the observed morphological evolution of the sputtered surface.

Optical Reflectivity and Raman Scattering in Few-Layer-Thick Graphene Highly Doped by K and Rb

We report the optical reflectivity and Raman scattering of few layer (L) graphene exposed to K and Rb vapors. Samples many tens of layers thick show the reflectivity and Raman spectra of the stage 1 bulk alkali intercalation compounds (GICs) KC(8) and RbC(8). However, these bulk optical and Raman properties only begin to appear in samples more than about 15 graphene layers thick. The 1 L to 4 L alkali exposed graphene Raman spectra are profoundly different than the Breit-Wigner-Fano (BWF) spectra of the bulk stage 1 compounds. Samples less than 10 layers thick show Drude-like plasma edge reflectivity dip in the visible; alkali exposed few layer graphenes are significantly more transparent than intrinsic graphene. Simulations show the in-plane free electron density is lower than in the bulk stage 1 GICs. In few layer graphenes, alkalis both intercalate between layers and adsorb on the graphene surfaces. Charge transfer electrically dopes the graphene sheets to densities near and above 10(+14) electrons/cm(2). New intrinsic Raman modes at 1128 and 1264 cm(-1) are activated by in-plane graphene zone folding caused by strongly interacting, locally crystalline alkali adlayers. The K Raman spectra are independent of thickness for L = 1-4, indicating that charge transfer from adsorbed and intercalated K layers are similar. The Raman G mode is downshifted and significantly broadened from intrinsic graphene. In contrast, the Rb spectra vary strongly with L and show increased doping by intercalated alkali as L increases. Rb adlayers appear to be disordered liquids, while intercalated layers are locally crystalline solids. A significant intramolecular G mode electronic resonance Raman enhancement is observed in K exposed graphene, as compared with intrinsic graphene.

Observation of magnetic-field-modulated energy gap in carbon nanotubes

We have measured the low-bias four-probe conductance of carbon nanotubes as a function of magnetic field parallel to the tube axis. The measured data showed a clear energy gap near the Fermi level whose magnitude changed with the magnetic field. The electrical transport properties of the nanotube turned out to be critically dependent on the change of energy gap. The periodic oscillation of the magnetoresistance of a carbon nanotube can be explained by the periodic modulation of the energy gap with the magnetic field.

Persistent Topological Surface State at the Interface of Bi2Se3 Film Grown on Patterned Graphene

We employed graphene as a patternable template to protect the intrinsic surface states of thin films of topological insulators (TIs) from environment. Here we find that the graphene provides high-quality interface so that the Shubnikov de Haas (SdH) oscillation associated with a topological surface state could be observed at the interface of a metallic Bi2Se3 film with a carrier density higher than ∼ 10(19) cm(-3). Our in situ X-ray diffraction study shows that the Bi2Se3 film grows epitaxially in a quintuple layer-by-layer fashion from the bottom layer without any structural distortion by interfacial strain. The magnetotransport measurements including SdH oscillations stemming from multiple conductance channels reveal that the topological surface state, with the mobility as high as ∼ 0.5 m(2)/(V s), remains intact from the graphene underneath without degradation. Given that the graphene was prepatterned on arbitrary insulating substrates, the TI-based microelectronic design could be exploited. Our study thus provides a step forward to observe the topological surface states at the interface without degradation by tuning the interface between TI and graphene into a measurable current for device application.

Proximity Effect Induced Electronic Properties of Graphene on Bi2Te2Se

We report that the π-electrons of graphene can be spin-polarized to create a phase with a significant spin-orbit gap at the Dirac point (DP) using a graphene-interfaced topological insulator hybrid material. We have grown epitaxial Bi2Te2Se (BTS) films on a chemical vapor deposition (CVD) graphene. We observe two linear surface bands from both the CVD graphene notably flattened and BTS coexisting with their DPs separated by 0.53 eV in the photoemission data measured with synchrotron photons. We further demonstrate that the separation between the two DPs, Δ(D-D), can be artificially fine-tuned by adjusting the amount of Cs atoms adsorbed on the graphene to a value as small as Δ(D-D) = 0.12 eV to find any proximity effect induced by the DPs. Our density functional theory calculation shows the opening of a spin-orbit gap of ∼20 meV in the π-band, enhanced by 3 orders of magnitude from that of a pristine graphene, and a concomitant phase transition from a semimetallic to a quantum spin Hall phase when Δ(D-D) ≤ 0.20 eV. We thus present a practical means of spin-polarizing the π-band of graphene, which can be pivotal to advance graphene-based spintronics.

Possible evidence of non-Fermi liquid behaviour from Quasi-one-dimensional indium nanowires

We report possible evidence of non-Fermi liquid (NFL) observed at room temperature from the quasi one-dimensional (1D) indium (In) nanowires self-assembled on Si(111)-7?7 surface. Using high-resolution electron-energy-loss spectroscopy, we have measured energy and width dispersions of a low energy intrasubband plasmon excitation in the In nanowires. We observe the energy-momentum dispersion ?(q) in the low q limit exactly as predicted by both NFL theory and the random-phase-approximation. The unusual non-analytic width dispersion ?(q) ~ q? measured with an exponent ?=1.40?0.24, however, is understood only by the NFL theory. Such an abnormal width dispersion of low energy excitations may probe the NFL feature of a non-ideal 1D interacting electron system despite the significantly suppressed spin-charge separation (?40?meV).