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Featured researches published by Nan Huang.


ACS Applied Materials & Interfaces | 2015

Enhanced Performance of Nanocrystalline ZnO DNA Biosensor via Introducing Electrochemical Covalent Biolinkers

Chun Wang; Nan Huang; Hao Zhuang; Xin Jiang

Zinc oxide (ZnO) is considered to be one of the most promising candidates for the third-generation DNA biosensor because of its good chemical stability, wonderful biocompatibility, easy surface modification, and numerous kinds of nanostructures. In this work, we report a new and simple method to modify ZnO surface for the immobilization of oligonucleotides by electrochemical covalent grafting of diazonium salts. The atomic force microscope, X-ray photoelectron spectroscopy, surface contact angle system, and electrochemical workstation were employed to characterize the functionalization process. Fluorescence results show that this kind of DNA biosensor from covalently linking strategy has an enhanced performance compared to that based on an electrostatic adsorption route. The functionalized ZnO biosensor has the capability to distinguish four-base mismatched, one-base mismatched, and complementary DNA sequences. Moreover, a linear relationship has been observed between the fluorescence intensity and the concentration of the complementary DNA in the solution within the range from 10(-6) to 10(-9) M, offering us a possibility in the qualitative determination of the level of target DNA.


Journal of Materials Chemistry | 2017

Battery-like supercapacitors from diamond networks and water-soluble redox electrolytes

Siyu Yu; Nianjun Yang; Hao Zhuang; Soumen Mandal; Oliver Aneurin Williams; Bing Yang; Nan Huang; Xin Jiang

Enhanced performance of electrochemical capacitors can be achieved by larger capacitances as well as higher power and energy densities. In this work, such battery-like supercapacitors were fabricated using a three-dimensional and conductive diamond network as the capacitor electrode and water-soluble redox couples as the electrolyte. In 0.05 M Fe(CN)63−/4− + 1.0 M Na2SO4 aqueous solution, a capacitance of 73.42 mF cm−2 was obtained at a current density of 1 mA cm−2. This value is 10 000 times higher than the capacitance of diamond electric double layer capacitors (EDLCs). The energy and power densities of a fabricated diamond network symmetric pseudocapacitor were up to 56.50 W h kg−1 and 13.7 kW kg−1, respectively. Compared with those of diamond EDLCs obtained with the same cell voltage, they are enhanced about 3500 and 1440 fold, respectively. Therefore the combination of diamond networks and water-soluble redox electrolytes is a novel approach to construct electrochemical capacitors and thus bridges the gap between normal dielectric capacitors and rechargeable batteries.


Langmuir | 2016

Photochemical Modification of Single Crystalline GaN Film Using n-Alkene with Different Carbon Chain Lengths as Biolinker

Chun Wang; Hao Zhuang; Nan Huang; Steffen Heuser; Christoph Schlemper; Zhaofeng Zhai; Baodan Liu; Thorsten Staedler; Xin Jiang

As a potential material for biosensing applications, gallium nitride (GaN) films have attracted remarkable attention. In order to construct GaN biosensors, a corresponding immobilization of biolinkers is of great importance in order to render a surface bioactive. In this work, two kinds of n-alkenes with different carbon chain lengths, namely allylamine protected with trifluoroacetamide (TFAAA) and 10-aminodec-1-ene protected with trifluoroacetamide (TFAAD), were used to photochemically functionalize single crystalline GaN films. The successful linkage of both TFAAA and TFAAD to the GaN films is confirmed by time-of-flight secondary ion mass spectrometry (ToF-SIMS) measurement. With increased UV illumination time, the intensity of the secondary ions corresponding to the linker molecules initially increases and subsequently decreases in both cases. Based on the SIMS measurements, the maximum coverage of TFAAA is achieved after 14 h of UV illumination, while only 2 h is required in the case of TFAAD to reach the situation of a fully covered GaN surface. This finding leads to the conclusion that the reaction rate of TFAAD is significantly higher compared to TFAAA. Measurements by atomic force microscopy (AFM) indicate that the coverage of GaN films by a TFAAA layer leads to an increased surface roughness. The atomic terraces, which are clearly observable for the pristine GaN films, disappear once the surface is fully covered by a TFAAA layer. Such TFAAA layers will feature a homogeneous surface topography even for reaction times of 24 h. In contrast to this, TFAAD shows strong cross-polymerization on the surface, this is confirmed by optical microscopy. These results demonstrate that TFAAA is a more suitable candidate as biolinker in context of the GaN surfaces due to its improved controllability.


CrystEngComm | 2016

Defect-induced strain relaxation in 3C-SiC films grown on a (100) Si substrate at low temperature in one step

Bing Yang; Hao Zhuang; Junhao Li; Nan Huang; Lusheng Liu; Kaiping Tai; Xin Jiang

The epitaxial deposition of a 3C-SiC film on a (100) Si substrate has been achieved at low temperature in one step using the microwave plasma CVD technique. A high density of defects such as misfit dislocations, stacking faults (SF) and twin boundaries (TB) is generated in the film. Defect-induced strain distribution in the 3C-SiC film is analyzed by the geometric phase analysis (GPA) method combined with X-ray diffraction (XRD) and Raman spectroscopy. The strain analysis at an atomic level reveals that periodical misfit dislocations at the interface generate high local compressive strain (>20%) around the core of the dislocations in the SiC film, relaxing the major part of the intrinsic strain. A highly compressive interfacial layer is found to form between the SiC film and Si substrate regardless of the carbonization temperature. This interfacial layer is linked with the carbonization step of the film growth process. In addition, twins and stacking faults provide a complementary route for strain relaxation during the film growth process. It is found that more strain is accommodated at the matrix/twin interface during twin nucleation rather than that at the growth stage. The atomic understanding of the effects of crystalline defects on strain relaxation will provide important implications for the control of defects in SiC films and design of high-performance SiC devices.


CrystEngComm | 2018

Fabrication of silicon-vacancy color centers in diamond films: tetramethylsilane as a new dopant source

Bing Yang; Junhao Li; Liang Guo; Nan Huang; Lusheng Liu; Zhaofeng Zhai; Wenjing Long; Xin Jiang

Color centers in diamonds hold great promise for applications in optical sensors, bio-imaging, and quantum communication. Here, we synthesize Si-doped diamond films with Si-vacancy (SiV) centers by the flow of tetramethylsilane (TMS, Si(CH3)4) gas using the microwave plasma chemical vapor deposition technique. In order to achieve high emission efficiency of the SiV centers, the effect of the TMS content on the microstructural evolution and photoluminescence (PL) of this type of color center is investigated using various spectroscopic techniques and high resolution transmission electron microscopy (HRTEM). The introduction of TMS gas in the diamond films leads to grain refinement of the diamond crystals and a weak SiV PL intensity located at 738 nm, at a growth temperature of 650 °C. For diamond films grown at 870 °C, the addition of Si atoms results in grain refinement and the transition of the diamond grains from micro-size without doping (no TMS) to nano-level at a Si/C ratio of 1/100. The SiV PL intensity exhibits a non-monotonic behavior with increasing Si/C ratios. At a Si/C ratio of 1/3100, the diamond film features a structure of nano-grains separated with (100) micro-grains, and displays a maximum in the PL intensity of the SiV centers: a very strong narrow peak at 738 nm with a FWHM of about 5.1 nm. Increasing the Si/C ratio promotes the formation of a nanocrystalline structure and the decrease of the SiV PL intensity. The combination of Raman spectral and HRTEM analysis implies that the PL quenching of the SiV center with the increasing Si/C ratios is attributed to the formation of amorphous carbon. Our results not only demonstrate that the diamond film, featuring a structure of nano-crystals with (100) micro-crystals, could be a promising material with high-efficiency SiV centers, but also highlight that this approach to balancing the concentration of Si impurities and the crystalline quality of the diamond films could advance the fabrication of high-emission SiV centers for optical applications.


Acta Biomaterialia | 2018

Hydration-induced nano- to micro-scale self-recovery of the tooth enamel of the giant panda

Zengqian Liu; Z.Y. Weng; Zhaofeng Zhai; Nan Huang; Zhenjun Zhang; Jun Tan; Chuanbin Jiang; D. Jiao; Guoqi Tan; Jian Zhang; Xin Jiang; Zhefeng Zhang; Robert O. Ritchie

The tooth enamel of vertebrates comprises a hyper-mineralized bioceramic, but is distinguished by an exceptional durability to resist impact and wear throughout the lifetime of organisms; however, enamels exhibit a low resistance to the initiation of large-scale cracks comparable to that of geological minerals based on fracture mechanics. Here we reveal that the tooth enamel, specifically from the giant panda, is capable of developing durability through counteracting the early stage of damage by partially recovering its innate geometry and structure at nano- to micro- length-scales autonomously. Such an attribute results essentially from the unique architecture of tooth enamel, specifically the vertical alignment of nano-scale mineral fibers and micro-scale prisms within a water-responsive organic-rich matrix, and can lead to a decrease in the dimension of indent damage in enamel introduced by indentation. Hydration plays an effective role in promoting the recovery process and improving the indentation fracture toughness of enamel (by ∼73%), at a minor cost of micro-hardness (by ∼5%), as compared to the dehydrated state. The nano-scale mechanisms that are responsible for the recovery deformation, specifically the reorientation and rearrangement of mineral fragments and the inter- and intra-prismatic sliding between constituents that are closely related to the viscoelasticity of organic matrix, are examined and analyzed with respect to the structure of tooth enamel. Our study sheds new light on the strategies underlying Natures design of durable ceramics which could be translated into man-made systems in developing high-performance ceramic materials. STATEMENT OF SIGNIFICANCE: Tooth enamel plays a critical role in the function of teeth by providing a hard surface layer to resist wear/impact throughout the lifetime of organisms; however, such enamel exhibits a remarkably low resistance to the initiation of large-scale cracks, of hundreds of micrometers or more, comparable to that of geological minerals. Here we reveal that tooth enamel, specifically that of the giant panda, is capable of partially recovering its geometry and structure to counteract the early stages of damage at nano- to micro-scale dimensions autonomously. Such an attribute results essentially from the architecture of enamel but is markedly enhanced by hydration. Our work discerns a series of mechanisms that lead to the deformation and recovery of enamel and identifies a unique source of durability in the enamel to accomplish this function. The ingenious design of tooth enamel may inspire the development of new durable ceramic materials in man-made systems.


ACS Applied Materials & Interfaces | 2015

Diamond Network: Template-Free Fabrication and Properties

Hao Zhuang; Nianjun Yang; Haiyuan Fu; Lei Zhang; Chun Wang; Nan Huang; Xin Jiang


Sensors and Actuators B-chemical | 2016

Hybrid diamond/graphite films as electrodes for anodic stripping voltammetry of trace Ag+ and Cu2+

Yuning Guo; Nan Huang; Bing Yang; Chun Wang; Hao Zhuang; Qingquan Tian; Zhaofeng Zhai; Lusheng Liu; Xin Jiang


Electrochemistry Communications | 2014

Cubic SiC for trace heavy metal ion analysis

Hao Zhuang; Chun Wang; Nan Huang; Xin Jiang


Surface & Coatings Technology | 2016

Growth of large-scale heteroepitaxial 3C-SiC films and nanosheets on silicon substrates by microwave plasma enhanced CVD at higher powers

Chun Wang; Nan Huang; Hao Zhuang; Zhaofeng Zhai; Bing Yang; Lusheng Liu; Xin Jiang

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Xin Jiang

Chinese Academy of Sciences

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Chun Wang

Chinese Academy of Sciences

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Zhaofeng Zhai

Chinese Academy of Sciences

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Lusheng Liu

Chinese Academy of Sciences

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Junhao Li

Chinese Academy of Sciences

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Qingquan Tian

Chinese Academy of Sciences

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Xinyi Jia

Chinese Academy of Sciences

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Yuning Guo

Chinese Academy of Sciences

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