Nan Lin

An exploration of slab-coupled semiconductor lasers

To obtain a high-power and efficient single-mode laser, a new laser called the slab coupled optical waveguide laser (SCOWL) has been developed. We have simulated its structure and grown the chip with this structure by low-pressure metal organic chemical vapor deposition. We have also produced the broad-area SCOWL and compared it with the traditional structure laser in terms of some performances. This work lays the foundation for further research of ridged lasers with the same structure.

Hetero-Epitaxial Defects and Optical Characteristics of SiCGe Layers Grown on 6H-SiC Substrate

By means of SEM, TEM, UV-VIS optical transmission spectra and photoluminescence spectra tests, hetero-epitaxial defects and optical characteristics of SiCGe layers grown on 6H-SiC substrate were studied. SEM and TEM images have shown that the SiCGe were grown in layer-by-layer mode with APD and DPB defects which were caused by the thermal and lattice mismatches between SiCGe and SiC. Transmission spectra results have shown the calculated band gap of the SiCGe layer was 2.31eV. Room temperature photoluminescence spectra have shown that the peak wavelength and the FWHM of SiCGe layer were closely related to its Ge contents and the hetero-epitaxial defects.