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Proceedings of SPIE | 2017

VCSELs for optical communication at Fuji Xerox

Takashi Kondo; Junichiro Hayakawa; Naoki Jogan; Akemi Murakami; Jun Sakurai; Xiaodong Gu; Fumio Koyama

We introduce the characteristics of vertical-cavity surface-emitting lasers (VCSELs) for use in optical communications. In the field of optical interconnections and networks, 850 nm VCSELs are key optical transmitters due to their high-speed modulation and low power consumption. One promising candidate for achieving high-speed modulations exceeding 50 Gbps is the transverse-coupled-cavity (TCC) VCSEL. In this talk, we demonstrate the characteristics of 850 nm transverse-coupled-cavity VCSELs, which helped us achieve a high 3dB modulation bandwidth (30 GHz) at 0 °C and realize eye-opening at the large-signal modulation rate of 48 Gbps. The VCSELs epilayer structure was grown by MOCVD. The active region consists of three strained InGaAs QWs surrounded by AlGaAs barriers. The n-type and p-type DBRs are composed of AlGaAs/AlGaAs, respectively. A line-shaped H+ ion was implanted at the center of the bowtie-shaped post, dividing it into two cavities. The threshold current of the TCC VCSEL with an oxide aperture of 3.6 μm is 0.33 mA. Only the left-side cavity is pumped, while the right cavity is unpumped. The effect of modulation bandwidth enhancement was observed over a wide temperature range of 120K thanks to an optical feedback in the coupled cavities. These results show the possibility of achieving high-speed VCSELs without any temperature or bias control. We also demonstrate an ultra-compact photodetector-integrated VCSEL with two laterally-coupled cavities. An output power and a photocurrent exhibit similar tendencies under a wide range of temperature changes. This device could be also used for monitoring output power without a conventional photodetector mounted separately.


Archive | 2017

METHOD OF MANUFACTURING SURFACE-EMITTING SEMICONDUCTOR LASER ELEMENT

Junichiro Hayakawa; Akemi Murakami; Takashi Kondo; Naoki Jogan; Jun Sakurai


Archive | 2018

LIGHT EMITTING ELEMENT, LIGHT EMITTING ELEMENT ARRAY, AND LIGHT TRANSMISSION DEVICE

Junichiro Hayakawa; Akemi Murakami; Takashi Kondo; Naoki Jogan; Jun Sakurai


Archive | 2018

LIGHT EMITTING ELEMENT ARRAY AND OPTICAL TRANSMISSION DEVICE

Junichiro Hayakawa; Akemi Murakami; Takashi Kondo; Naoki Jogan; Jun Sakurai


Archive | 2017

METHOD OF MANUFACTURING OPTICAL SEMICONDUCTOR ELEMENT

Naoki Jogan; Jun Sakurai; Akemi Murakami; Takashi Kondo; Kazutaka Takeda; Junichiro Hayakawa


Archive | 2017

VERTICAL CAVITY SURFACE EMITTING LASER ARRAY AND METHOD FOR MANUFACTURING VERTICAL CAVITY SURFACE EMITTING LASER ARRAY

Takashi Kondo; Akemi Murakami; Naoki Jogan; Junichiro Hayakawa; Jun Sakurai


international semiconductor laser conference | 2016

Temperature dependence of small signal response of 850 nm transverse-coupled-cavity VCSELs

Takashi Kondo; Junichiro Hayakawa; Naoki Jogan; Akemi Murakami; Jun Sakurai; X. Gu; Fumio Koyama


international semiconductor laser conference | 2016

Temperature characteristics of photo detector integrated transverse-coupled-cavity VCSELs

Naoki Jogan; Junichiro Hayakawa; Takashi Kondo; Akemi Murakami; Jun Sakurai; X. Gu; Fumio Koyama


Archive | 2016

SURFACE EMITTING SEMICONDUCTOR LASER DEVICE

Junichiro Hayakawa; Akemi Murakami; Takashi Kondo; Kazutaka Takeda; Naoki Jogan; Jun Sakurai


Archive | 2016

Surface-emitting semiconductor laser device and method for producing the same

Naoki Jogan; Jun Sakurai; Akemi Murakami; Takashi Kondo; Kazutaka Takeda; Junichiro Hayakawa

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