Naresh Kumar Thipparapu

Bi-doped fiber amplifier with a flat gain of 25 dB operating in the wavelength band 1320–1360 nm

Bismuth (Bi)-doped phosphosilicate fibers have been fabricated by the modified chemical vapor deposition (MCVD)-solution doping technique under different process conditions. The influence of fabrication conditions on unsaturable loss in fibers has been investigated. Pump wavelength dependent Bi gain has been studied to obtain a flat gain over a wide bandwidth. A diode pumped all-fiber Bi-doped amplifier with a flat gain of 25±1  dB from 1320-1360 nm (40 nm) has been demonstrated for -10  dBm of input signal power with a noise figure (NF) ranging from 4-6 dB. Moreover, a small signal gain of 29 dB and a NF of 4.5 dB at 1340 nm has been achieved for an input signal power of -30  dBm.

1120 nm diode-pumped Bi-doped fiber amplifier

Bismuth-doped aluminosilicate fiber has been fabricated by the MCVD-solution doping method and characterized for its unsaturable loss and gain. The amplifier performance has been compared for a novel pumping wavelength of 1120 nm with the conventional pumping wavelength region of 1047 nm. Unsaturable loss was 65% and 35% at 1047 and 1120 nm, pump wavelengths, respectively. A maximum gain of about 8 dB at 1180 nm for a fiber length of 100 m was observed with 1120 nm pumping. Gain enhancement of 70% was achieved with the 1120 nm pump as compared to the 1047 nm pump. A further 3.5 dB gain was obtained on simultaneous pumping at 1047 and 1120 nm.

Cladding-Pumped Er/Yb-Doped Multi-Element Fiber Amplifier for Wideband Applications

A cladding-pumped multi-element fiber (MEF) comprising 4-Er/Yb-doped signal fibers and single multimode pump fiber has been used to demonstrate a wideband amplifier. The MEF amplifier has been characterized for different pump powers and signal fiber lengths. A maximum gain of 37 dB and corresponding noise figure of 7.3 dB have been obtained with an input signal of -23 dBm in the C-band. The signal fibers were cascaded to provide >17-dB gain over a 80-nm bandwidth covering a wavelength range of 1536-1615 nm.

Self-mode-locked bismuth-doped fiber laser operating at 1340nm

Bismuth (Bi)-doped fiber (BDF) lasers and amplifiers have been demonstrated in different glass hosts (i.e., aluminosilicate, phosphosilicate and germanosilicate) covering the 1150–1800nm wavelength region [1-3]. Pulsed Bi-doped fiber lasers (BDFLs) are of great interest owing to their potential applications in medicine, material processing and optical fiber communications. The first Bi-doped pulsed fiber laser was demonstrated in 2007 with 50ps pulses at 1161nm in a Bi-doped silicate fiber using SESAM as a saturable absorber (SA) [4]. A number of studies have since reported on BDFLs [3-6], however, the pulse dynamics in BDFs have not been fully understood due to the unsaturable loss and excited state absorption present in these fibers [7]. In this paper, we present an all fiber self-mode-locked BDFL operating at 1340nm with a minimum pulse width of 1.5ns, the first demonstration of its kind.

Dataset for Bismuth-doped all-fiber mode-locked laser operating at 1340 nm

Dataset supporting: Thipparapu, N. K., Guo, C., Barua, P., Umnikov, A., Taranta, A., & Sahu, J. (2017). Bismuth-doped all-fiber mode-locked laser operating at 1340 nm. Optics Letters, 42(24).

Dataset for Self-mode-locked Bismuth-doped Fiber Laser Operating at 1340nm

Bismuth (Bi)-doped fiber (BDF) lasers and amplifiers have been demonstrated in different glass hosts (i.e., aluminosilicate, phosphosilicate and germanosilicate) covering the 1150–1800nm wavelength region [1-3]. Pulsed Bi-doped fiber lasers (BDFLs) are of great interest owing to their potential applications in medicine, material processing and optical fiber communications. The first Bi-doped pulsed fiber laser was demonstrated in 2007 with 50ps pulses at 1161nm in a Bi-doped silicate fiber using SESAM as a saturable absorber (SA) [4]. A number of studies have since reported on BDFLs [3-6], however, the pulse dynamics in BDFs have not been fully understood due to the unsaturable loss and excited state absorption present in these fibers [7]. In this paper, we present an all fiber self-mode-locked BDFL operating at 1340nm with a minimum pulse width of 1.5ns, the first demonstration of its kind.

Dataset for Bi-doped Fiber Amplifier with a Flat Gain of 25dB Operating in the Wavelength Band 1320-1360nm.

Bismuth (Bi) -doped phosphosilicate fibers have been fabricated by the modified chemical vapor deposition (MCVD) -solution doping technique under different process conditions. The influence of fabrication conditions on unsaturable loss in fibers has been investigated. Pump wavelength dependent Bi gain has been studied to obtain a flat gain over a wide bandwidth. A diode pumped all-fiber Bi-doped amplifier with a flat gain of 25 ± 1dB from 1320-1360nm (40nm) has been demonstrated for -10 dBm of input signal power with a noise figure (NF) ranging from 4–6 dB. Moreover, a small signal gain of 29 dB and a NF of 4.5dB at 1340 nm have been achieved for an input signal power of -30dBm.

Diode Pumped Bi-doped Fiber Laser Operating at 1360nm

Bi-doped phosphosilicate fibers are fabricated by MCVD-solution doping technique under different oxidation conditions. Fibers are evaluated for unsaturable loss and laser performance. A 22mW all-fiber Bi-laser is demonstrated at 1360nm by LD pumping at 1267nm.

Wideband multi-element Er-doped fiber amplifier

A multi-element Er-doped fiber amplifier (MEEDFA) is demonstrated in which the gain profile is extended into the S and L bands. Each fiber element of the MEEDFA is found to provide a maximum gain of 37 dB and a noise figure of < 4 dB in the C-band. The gain profile of the amplifier is shifted towards longer wavelength by cascading fiber elements. The novel geometry of the multi-element fiber (MEF) could allow for the development of a broadband amplifier in a split-band configuration. The proposed amplifier can operate in the wavelength band of 1520 to 1595 nm (75 nm), with a minimum gain of 20 dB.