Nathalie Vast

Superconductivity from doping boron icosahedra

We propose an alternative route to achieve the superconducting state in boron-rich solids, the hole doping of

Boron carbides from first principles

{\mathrm{B}}_{12}

Thermoelectric transport properties of silicon: Toward an ab initio approach

icosahedra. For this purpose we consider a prototype metallic phase of

Wannier interpolation of the electron-phonon matrix elements in polar semiconductors: Polar-optical coupling in GaAs

{\mathrm{B}}_{13}{\mathrm{C}}_{2}

Coherent phonon coupling to individual Bloch states in photoexcited bismuth.

. We show that in this compound the boron icosahedral units are mainly responsible for the large phonon frequencies logarithmic average,

Carbon-rich icosahedral boron carbide designed from first principles

65.8\phantom{\rule{0.3em}{0ex}}\text{meV}

turboEELS—A code for the simulation of the electron energy loss and inelastic X-ray scattering spectra using the Liouville–Lanczos approach to time-dependent density-functional perturbation theory☆

, and the moderate electron-phonon coupling

Electron energy loss and inelastic x-ray scattering cross sections from time-dependent density-functional perturbation theory

\ensuremath{\lambda}=0.81

Hot electron relaxation dynamics in semiconductors: assessing the strength of the electron–phonon coupling from the theoretical and experimental viewpoints

. We suggest that this high

LATTICE DYNAMICS OF ICOSAHEDRAL ALPHA -BORON UNDER PRESSURE

{T}_{c}