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Dive into the research topics where Nianqiang Li is active.

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Featured researches published by Nianqiang Li.


Optics Letters | 2017

Secure communication systems based on chaos in optically pumped spin-VCSELs

Nianqiang Li; H. Susanto; Ben Cemlyn; Ian D. Henning; M.J. Adams

We report on a master and slave configuration consisting of two optically pumped spin-vertical-cavity surface-emitting lasers for chaos synchronization and secure communication. Under appropriate conditions, high-quality chaos synchronization is achieved. We propose two encryption schemes, where either the pump magnitude or polarization is modulated. The results show that these allow for Gb/s transmission of secure data, but exhibit different features: one indicates that the message can be recovered by the total intensity, but not the polarization components, whereas the other shows that the message can be better or exclusively retrieved from the polarization components at high bit rates.


Optics Letters | 2017

High frequency continuous birefringence-induced oscillations in spin-polarized vertical-cavity surface-emitting lasers

Maria Susana Torre; H. Susanto; Nianqiang Li; K. Schires; Matias F. Salvide; Ian D. Henning; M.J. Adams; Antonio Hurtado

Sustained, large amplitude and tunable birefringence-induced oscillations are obtained in a spin-vertical cavity surface-emitting laser (spin-VCSEL). Experimental evidence is provided using a spin-VCSEL operating at 1300 nm, under continuous-wave optical pumping and at room temperature. Numerical and stability analyses are performed to interpret the experiments and to identify the combined effects of pump ellipticity, spin relaxation rate, and cavity birefringence. Importantly, the frequency of the induced oscillations is determined by the devices birefringence rate, which can be tuned to very large values. This opens the path for ultrafast spin-lasers operating at record frequencies exceeding those possible in traditional semiconductor lasers and with ample expected impact in disparate disciplines (e.g., datacomms, spectroscopy).


Semiconductor Lasers and Laser Dynamics VIII | 2018

Injection locking of two laterally-coupled semiconductor laser arrays

Nianqiang Li; H. Susanto; Benjamin Rhodri Cemlyn; Ian D. Henning; M.J. Adams

In this paper the injection locking properties of two laterally-coupled semiconductor lasers (LCSLs) are studied numerically. We consider external injection into either one (single external-injection scheme) or both (simultaneous external-injection scheme) of the LCSLs. We present stability maps for both schemes in the plane of the frequency detuning and the injection strength, where attention is centered on the influence of the waveguiding structures, the laser separation, the pump rate, and the frequency offset between the two coupled lasers. Our results contribute to a better understanding of LCSLs under external injection.


Scientific Reports | 2018

Locking bandwidth of two laterally coupled semiconductor lasers subject to optical injection

Nianqiang Li; H. Susanto; Ben Cemlyn; Ian D. Henning; M.J. Adams

We report here for the first time (to our knowledge), a new and universal mechanism by which a two-element laser array is locked to external optical injection and admits stably injection-locked states within a nontrivial trapezoidal region. The rate equations for the system are studied both analytically and numerically. We derive a simple mathematical expression for the locking conditions, which reveals that two parallel saddle-node bifurcation branches, not reported for conventional single lasers subject to optical injection, delimit the injection locking range and its width. Important parameters are the linewidth enhancement factor, the laser separation, and the frequency offset between the two laterally-coupled lasers; the influence of these parameters on locking conditions is explored comprehensively. Our analytic approximations are validated numerically by using a path continuation technique as well as direct numerical integration of the rate equations. More importantly, our results are not restricted by waveguiding structures and uncover a generic locking behavior in the lateral arrays in the presence of injection.


Spintronics X | 2017

Quantum dot spin-V(E)CSELs: polarization switching and periodic oscillations

Dimitris Alexandropoulos; H. Susanto; Ian D. Henning; M.J. Adams; Nianqiang Li

Spin-polarized vertical (external) cavity surface-emitting lasers [Spin-V(E)CSELs] using quantum dot (QD) material for the active region, can display polarization switching between the right- and left-circularly polarized fields via control of the pump polarization. In particular, our previous experimental results have shown that the output polarization ellipticity of the spin-V(E)CSEL emission can exhibit either the same handedness as that of the pump polarization or the opposite, depending on the experimental operating conditions. In this contribution, we use a modified version of the spin-flip model in conjunction with combined time-independent stability analysis and direct time integration. With two representative sets of parameters our simulation results show good agreement with experimental observations. In addition periodic oscillations provide further insight into the dynamic properties of spin-V(E)CSELs.


Physical Review A | 2017

Effects of detuning, gain-guiding, and index antiguiding on the dynamics of two laterally coupled semiconductor lasers

M.J. Adams; Nianqiang Li; Ben Cemlyn; H. Susanto; Ian D. Henning


Physical Review A | 2017

Stability and bifurcation analysis of spin-polarized vertical-cavity surface-emitting lasers

Nianqiang Li; H. Susanto; Ben Cemlyn; Ian D. Henning; M.J. Adams


Electronics | 2016

Stability Analysis of Quantum-Dot Spin-VCSELs

Nianqiang Li; Dimitris Alexandropoulos; H. Susanto; Ian D. Henning; M.J. Adams


Semiconductor Science and Technology | 2018

Near-threshold high spin amplification in a 1300 nm GaInNAs spin laser

Ben Cemlyn; M.J. Adams; Edmund Harbord; Nianqiang Li; Ian D. Henning; Ruth Oulton; Ville-Markus Korpijärvi; Mircea Guina


Semiconductor Science and Technology | 2018

Algebraic expressions for the polarisation response of spin-VCSELs

M.J. Adams; Nianqiang Li; Ben Cemlyn; H. Susanto; Ian D. Henning

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Antonio Hurtado

University of Strathclyde

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Maria Susana Torre

National Scientific and Technical Research Council

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