Nicola Nedev

Absorption and transport properties of Si rich oxide layers annealed at various temperatures

Thin films of SiOx (x = 1.15, d = 1 and 2 µm), deposited by thermal vacuum evaporation of SiO on n- and p-type crystalline Si or quartz substrates, and then furnace annealed at 250, 700 and 1000 °C, are studied. Optical and infrared transmission measurements prove phase separation upon annealing at 700 and 1000 °C and growth of amorphous Si nanoparticles upon annealing at 700 °C, whose optical band gap is ~2.6 eV. High-resolution electron microscopy data confirm growth of Si nanocrystals with average size ~5 nm in the films annealed at 1000 °C. Both kinds of transmission data were used to estimate the nanoparticle volume fraction and values of 0.2–0.25 and 0.25–0.30 for the films annealed at 700 and 1000 °C, respectively, are determined. Current–voltage characteristics (at fields >5 × 104 V cm−1) are measured on metal/SiOx/c-Si/metal structures to explore carrier transport mechanisms in all kinds of samples. They are nearly symmetric, which indicates that in all samples carrier transport via structures is dominated by the transport in the SiOx layers. It is concluded that current transport is space-charge-limited for the layers annealed at 250 °C. In the films further annealed at 700 °C containing amorphous nanoparticles, Poole–Frenkel transport mechanism is reported while tunnelling is assumed for the films annealed at 1000 °C.

Structural and optical properties of β-Ga2O3 thin films grown by plasma-assisted molecular beam epitaxy

Epitaxial beta-gallium oxide (β-Ga2O3) has been deposited on c-plane sapphire by plasma-assisted molecular-beam epitaxy technique using two methods. One method relied on a compound Ga2O3 source with oxygen plasma while the second used elemental Ga source with oxygen plasma. A side-by-side comparison of the growth parameters between these two methods has been demonstrated. With various substrate temperatures, pure phase (2¯01) oriented β-Ga2O3 thin films were obtained using both sources. Reflection high energy electron diffraction patterns displayed a threefold reconstruction during the growth. X-ray photoelectron spectroscopy analysis showed a shift in the binding energy of the Ga 2p peaks consistent with a Ga being in a +3 oxidation state. For transparent oxide like β-Ga2O3, it is important to determine the index of refraction (n) and its functional dependence on the wavelength. The Cauchy dispersion relation was employed to evaluate the refractive index, film thickness, roughness values, and extinction ...

MOS structures containing silicon nanoparticles for memory device applications

Metal-oxide-silicon structures containing layers with amorphous or crystalline silicon nanoparticles in a silicon oxide matrix are fabricated by sequential physical vapour deposition of SiOx (x = 1.15) and RF sputtering of SiO2 on n-type crystalline silicon, followed by high temperature annealing in an inert gas ambient. Depending on the annealing temperature, 700°C or 1000°C, amorphous or crystalline silicon nanoparticles are formed in the silicon oxide matrix. The annealing process is used not only for growing nanoparticles but also to form a dielectric layer with tunnelling thickness at the silicon/insulator interface. High frequency C-V measurements demonstrate that both types of structures can be charged negatively or positively by applying a positive or negative voltage on the gate. The structures with amorphous silicon nanoparticles show several important advantages compared to the nanocrystal ones, such as lower defect density at the interface between the crystalline silicon wafer and the tunnel silicon oxide, better retention characteristics and better reliability.

Enhanced antifungal activity by disinfected titanium dioxide nanotubes via reduced nano-adhesion bonds

We have provided evidence that the beneficial effect of super-oxidized water (SOW) disinfected Ti6Al4V-TiO2 nanotubes (NTs) can reduce bacterial adhesion and biofilm formation. However, the need of antifungal nanostructured surfaces with osteoactive capabilities is an important goal that has been arising for dental implants (DI) applications. Thus, in the present study we isolated and tested the effects of Candida albicans (C. albicans) on disinfected, wetter and nanoroughness NTs compared to a non-modified control. Moreover, we elucidated part of the fungal adhesion mechanism by studying and relating the mycotic adhesion kinetics and the formation of fungal nanoadhesion bonds among the experimental materials, to gain new insight of the fungal-material-interface. Similarly, the initial behavior of human alveolar bone osteoblasts (HAOb) was microscopically evaluated. NTs significantly reduced the yeasts adhesion and viability with non-outcomes of biofilm than the non-modified surface. Cross-sectioning of the fungal cells revealed promoted nano-contact bonds with superior fungal spread on the control alloy interface; meanwhile NTs evidenced decreased tendency along time; suggesting, down-regulation by the nanostructured morphology and the SOW treatment. Importantly, the initial performance of HAOb demonstrated strikingly promoted anchorage with effects of filopodia formation and increased vital cell on NTs with SOW. The present study proposes SOW treatment as an active protocol for synthesis and disinfection of NTs with potent antifungal capability, acting in part by the reduction of nano-adhesion bonds at the surface-fungal interface; opening up a novel route for the investigation of mycotic-adhesion processes at the nanoscale for bone implants applications.

Copper Corrosion by Atmospheric Pollutants in the Electronics Industry

Hydrogen sulphide (H2S) is considered one of the most corrosive atmospheric pollutants. It is a weak, diprotic, reducing acid, readily soluble in water and dispersed into the air by winds when emitted from natural, industrial, and anthropogenic sources. It is a pollutant with a high level of toxicity impairing human health and the environment quality. It attacks copper forming thin films of metallic sulphides or dendrite whiskers, which are cathodic to the metal substrate, enhancing corrosion. H2S is actively involved in microbially influenced corrosion (MIC) which develops in water, involving sulphur based bacteria, in oxidizing and reducing chemical reactions. H2S is found in concentrated geothermal brines, in the atmosphere of geothermal fields, and in municipal sewage systems. Other active atmospheric pollutants include SOX, NOX, and CO. This investigation reports on the effects of H2S on copper in microelectronic components of equipment and devices, with the formation of nonconductive films that lead to electrical failures.

Disinfection of titanium dioxide nanotubes using super-oxidized water decrease bacterial viability without disrupting osteoblast behavior.

Amorphous titanium dioxide (TiO2) nanotubes (NTs) on Ti6Al4V alloy were synthesized by anodization using a commercially available super-oxidized water (SOW). The NT surfaces were sterilized by ultraviolet (UV) irradiation and disinfected using SOW. The adhesion and cellular morphology of pig periosteal osteoblast (PPO) cells and the behavior of Staphylococcus aureus (S. aureus) cultured on the sterilized and disinfected surfaces were investigated. A non-anodized Ti6Al4V disc sterilized by UV irradiation (without SOW) was used as control. The results of this study reveal that the adhesion, morphology and filopodia development of PPO cells in NTs are dramatically improved, suggesting that SOW cleaning may not disrupt the benefits obtained by NTs. Significantly decreased bacterial viability in NTs after cleaning with SOW and comparing with non-cleaned NTs was seen. The results suggest that UV and SOW could be a recommendable method for implant sterilization and disinfection without altering osteoblast behavior while decreasing bacterial viability.

The promotion of antibacterial effects of ti6al4v alloy modified with TiO 2 nanotubes using a superoxidized solution

The purpose of the present study was to synthetize 80 nm diameter TiO2 nanotubes (NTs) on Ti6Al4V alloy using a commercially superoxidized water (SOW) enriched with fluoride to reduce anodization time and promote the antibacterial efficacy against Staphylococcus aureus (S. aureus). The alloy discs were anodized for 5 min and as a result, NTs of approximately 80 nm diameters were obtained with similar morphology as reported in previous studies using longer anodization times (1-2 h). Filed emissionscanning electron microscopy (FE-SEM) and energy dispersive X-ray spectroscopy (EDX) were used to characterize the materials surfaces. The NTs showed significantly decreased S. aureus viability after 1, 3, and 5 days of culture in comparison to nonanodized alloy. Likewise, SEM analysis also suggested lower bacterial adhesion on the NTs surface. No differences in bacterial morphology and topography were observed on both materials, as analyzed by SEM and atomic force microscopy (AFM). In conclusion, 80 nm diameter NTs were grown on Ti6Al4V alloy in 5 min by using a SOW solution enriched with fluoride, which resulted in a material with promoted antibacterial efficacy against S. aureus for up to 5 days of in vitro culture when compared to nonanodized alloy.

Radiation Dosimeter Based on Metal-Oxide-Semiconductor Structures Containing Silicon Nanocrystals

MOS structures containing silicon nanocrystals in the gate dielectric have been tested as dosimeters for ionizing radiation. Before irradiation the nanocrystals have been charged with electrons by applying a pulse to the gate electrode. The γ-irradiation with doses in the range 0-100 Gy causes approximately linear variation of the flatband voltage, resulting in sensitivities of ~ 2.5 mV/Gy. At higher doses the sensitivity decreases because of decrease of the oxide electric field.

Formation of Si Nanocrystals in Thin SiO2 Films for Memory Device Applications

X-ray Diffraction and Reflectivity, Transmission Electron Microscopy and Atomic Force Microscopy were applied to study the effect of thermal annealing on the properties of thin SiOx films (~ 15 nm) prepared by thermal evaporation of SiO in vacuum. It has been shown that furnace annealing at 1000 oC causes phase separation and formation of uniformly distributed Si nanocrystals into a SiO2 matrix. Clockwise hysteresis has been observed in the C-V curves measured and explained by assuming charging and discharging of the NCs with carriers, which tunnel from the Si substrate.

Study of SiO

SiOx (1 <; x <; 2) thin films for potential application as a core of submicrometer optical waveguides were deposited by thermal evaporation of SiO. The optical properties of the films were modified during the deposition process, tuning the refractive index between 1.5 and 2. Some propagation characteristics of the optical slab waveguides such as optical modes effective indices, intensity distribution profiles, and propagation losses were measured and compared to theoretical calculations. Our results show the viability of SiOx as a core material for submicrometer waveguides in the visible and near-infrared spectra.