Nicole Wollschläger

A deep etching mechanism for trench-bridging silicon nanowires.

Introducing a single silicon nanowire with a known orientation and dimensions to a specific layout location constitutes a major challenge. The challenge becomes even more formidable, if one chooses to realize the task in a monolithic fashion with an extreme topography, a characteristic of microsystems. The need for such a monolithic integration is fueled by the recent surge in the use of silicon nanowires as functional building blocks in various electromechanical and optoelectronic applications. This challenge is addressed in this work by introducing a top-down, silicon-on-insulator technology. The technology provides a pathway for obtaining well-controlled silicon nanowires along with the surrounding microscale features up to a three-order-of-magnitude scale difference. A two-step etching process is developed, where the first shallow etch defines a nanoscale protrusion on the wafer surface. After applying a conformal protection on the protrusion, a deep etch step is carried out forming the surrounding microscale features. A minimum nanowire cross-section of 35 nm by 168 nm is demonstrated in the presence of an etch depth of 10 μm. Nanowire cross-sectional features are characterized via transmission electron microscopy and linked to specific process steps. The technology allows control on all dimensional aspects along with the exact location and orientation of the silicon nanowire. The adoption of the technology in the fabrication of micro and nanosystems can potentially lead to a significant reduction in process complexity by facilitating direct access to the nanowire during surface processes such as contact formation and doping.

Microstructure, smoothening effect, and local defects of alumina sol-gel coatings on ground steel

Porous alumina films with thicknesses of a few microns were prepared via a dip-coating technique on steel P92. The coating is shown to protect the steel against massive corrosion, which is typical in the hot reactive environment of coal-fired power plants. To mimic real conditions ground steel plates were coated with a boehmite-sol. This leads to an overall smoothing of the formerly rough surface. In the following short annealing step the inner porous construction with worm-like particles consisting of nano-crystallites and amorphous alumina is formed. Due to the simultaneous diffusion of chromium and iron ions out of the bulk steel material into the porous alumina coating, a dense interface with satisfactory adhesion is formed. However, the film exhibits few local defects like cracks or dense alumina nodules caused by steep edges in the ground surface or agglomeration of boehmite-sol components, respectively. Cracks especially have to be avoided. This problem can be overcome so far by slight modifications in the sol preparation process and surface treatment of the substrates. Nevertheless, the results demonstrate the potential of sol-gel-based alumina coatings as a time-saving and cost-saving protection type for commercial steel P92.Graphical Abstract

Determination of the Elastic Behavior of Silicon Nanowires within a Scanning Electron Microscope

Three-point bending tests were performed on double-anchored, 110 silicon nanowire samples in the vacuum chamber of a scanning electron microscope SEM via a micromanipulator equipped with a piezoresistive force sensor. Nanowires with widths of 35 nm and 74 nm and a height of 168 nm were fabricated. The nanowires were obtained monolithically along with their 10 μm tall supports through a top-down fabrication approach involving a series of etching processes. The exact dimension of wire cross sections was determined by transmission electron microscopy TEM. Conducting the experiments in an SEM chamber further raised the opportunity of the direct observation of any deviation from ideal loading conditions such as twisting, which could then be taken into consideration in simulations. Measured force-displacement behavior was observed to exhibit close resemblance to simulation results obtained by finite element modeling, when the bulk value of 169 GPa was taken as the modulus of elasticity for 110 silicon. Hence, test results neither show any size effect nor show evidence of residual stresses for the considered nanoscale objects. The increased effect of the native oxide with reduced nanowire dimensions was captured as well. The results demonstrate the potential of the developed nanowire fabrication approach for the incorporation in functional micromechanical devices.

Top-down technique for scaling to nano in silicon MEMS

Nanoscale building blocks impart added functionalities to microelectromechanical systems (MEMS). The integration of silicon nanowires with MEMS-based sensors leading to miniaturization with improved sensitivity and higher noise immunity is one example highlighting the advantages of this multiscale approach. The accelerated pace of research in this area gives rise to an urgent need for batch-compatible solutions for scaling to nano. To address this challenge, a monolithic fabrication approach of silicon nanowires with 10-μm-thick silicon-on-insulator (SOI) MEMS is developed in this work. A two-step Si etching approach is adopted, where the first step creates a shallow surface protrusion and the second step releases it in the form of a nanowire. It is during this second deep etching step that MEMS—with at least a 2-order-of-magnitude scale difference—is formed as well. The technique provides a pathway for preserving the lithographic resolution and transforming it into a very high mechanical precision in the...

A multi-functional MEMS-SPM for quantitative characterization of nano-objects

Based upon the micro-fabrication technology, a series of MEMS scanning probe microscopes (MEMS-SPM) have been developed in the national metrology institute Physikalisch-Technische Bundesanstalt (PTB) in Braunschweig. In comparison with those traditional AFMs, the MEMS-SPM features generally a vertical deflection up to 10 μm with a resolution of 0.2 nm, a non-linearity less than 0.03%, and a testing force up to several hundreds of μN with a force resolution down to 1 nN by means of a capacitive displacement sensing technique. As a result, these MEMS-SPMs can be successfully applied in the field of nanodimensional and nanomechanical metrology. Mechanical design of the MEMS-SPM is reported in this manuscript. Proof-of-principle measurements using a prototype of the MEMS-SPM are detailed in this manuscript, verifying the capabilities of the MEMS-SPM.

Superplastic behavior of silica nanowires obtained by direct patterning of silsesquioxane-based precursors

Silica nanowires spanning 10 μm-deep trenches are fabricated from different types of silsesquioxane-based precursors by direct e-beam patterning on silicon followed by release through deep reactive ion etching. Nanowire aspect ratios as large as 150 are achieved with a critical dimension of about 50 nm and nearly rectangular cross-sections. In situ bending tests are carried out inside a scanning electron microscope, where the etch depth of 10 [Formula: see text] provides sufficient space for deformation. Silica NWs are indeed observed to exhibit superplastic behavior without fracture with deflections reaching the full etch depth, about two orders of magnitude larger than the nanowire thickness. A large-deformation elastic bending model is utilized for predicting the deviation from the elastic behavior. The results of forty different tests indicate a critical stress level of 0.1-0.4 GPa for the onset of plasticity. The study hints at the possibility of fabricating silica nanowires in a monolithic fashion through direct e-beam patterning of silsesquioxane-based resins. The fabrication technology is compatible with semiconductor manufacturing and provides silica nanowires with a very good structural integrity.

Characterization of porous, TiO2 nanoparticle films using on-axis TKD in SEM – a new nano-analysis tool for a large-scale application

A combined methodical approach is tested with respect to the characterization of the inner structure of porous TiO2 layers as typically used in modern dye sensitized solar cells (DSSC). Their performance is directly linked to the surface area of the pore network. The micrometer thick layer employed was manufactured by screen-printing of a starting TiO2 powder constituted of shape-controlled, bipyramidal anatase nanoparticles on FTO/glass substrates. The analytical methods exploited in our study are Focused Ion Beam (FIB) slicing followed by 3D reconstruction as well as the new approach transmission Kikuchi diffraction (TKD) technology in the scanning electron microscope (SEM). Size and shape distribution of the TiO2 NPs within the layer can be extracted. SEM in transmission mode and atomic force microscopy (AFM) have been used to verify the dimensional data obtained by the new combined methodical approach. Its analytical benefits but also the challenges and limitations are highlighted.