Nihar Pradhan

Field-Effect Transistors Based on Few-Layered α-MoTe2

Here we report the properties of field-effect transistors based on a few layers of chemical vapor transport grown α-MoTe2 crystals mechanically exfoliated onto SiO2. We performed field-effect and Hall mobility measurements, as well as Raman scattering and transmission electron microscopy. In contrast to both MoS2 and MoSe2, our MoTe2 field-effect transistors are observed to be hole-doped, displaying on/off ratios surpassing 10(6) and typical subthreshold swings of ∼140 mV per decade. Both field-effect and Hall mobilities indicate maximum values approaching or surpassing 10 cm(2)/(V s), which are comparable to figures previously reported for single or bilayered MoS2 and/or for MoSe2 exfoliated onto SiO2 at room temperature and without the use of dielectric engineering. Raman scattering reveals sharp modes in agreement with previous reports, whose frequencies are found to display little or no dependence on the number of layers. Given that MoS2 is electron-doped, the stacking of MoTe2 onto MoS2 could produce ambipolar field-effect transistors and a gap modulation. Although the overall electronic performance of MoTe2 is comparable to those of MoS2 and MoSe2, the heavier element Te leads to a stronger spin-orbit coupling and possibly to concomitantly longer decoherence times for exciton valley and spin indexes.

High Photoresponsivity and Short Photoresponse Times in Few-Layered WSe2 Transistors

Here, we report the photoconducting response of field-effect transistors based on three atomic layers of chemical vapor transport grown WSe2 crystals mechanically exfoliated onto SiO2. We find that trilayered WSe2 field-effect transistors, built with the simplest possible architecture, can display high hole mobilities ranging from 350 cm(2)/(V s) at room temperature (saturating at a value of ∼500 cm(2)/(V s) below 50 K) displaying a strong photocurrent response, which leads to exceptionally high photoresponsivities up to 7 A/W under white light illumination of the entire channel for power densities p < 10(2) W/m(2). Under a fixed wavelength of λ = 532 nm and a laser spot size smaller than the conducting channel area, we extract photoresponsitivities approaching 100 mA/W with concomitantly high external quantum efficiencies up to ∼40% at room temperature. These values surpass values recently reported from more complex architectures, such as graphene and transition metal dichalcogenides based heterostructures. Also, trilayered WSe2 phototransistors display photoresponse times on the order of 10 μs. Our results indicate that the addition of a few atomic layers considerably decreases the photoresponse times, probably by minimizing the interaction with the substrates, while maintaining a very high photoresponsivity.

Manipulation of magnetization states of ferromagnetic nanorings by an applied azimuthal Oersted field

We manipulate the magnetic states of ferromagnetic nanorings with an azimuthal Oersted field directed along the ring circumference. The circular field is generated by passing current through an atomic force microscope tip positioned at the center of the ring, and can directly control the chirality of the vortex state. We demonstrate switching from an onion state to a vortex state and between two vortex states, using magnetic force microscopy to image the resulting magnetic states. The understanding of the magnetization switching behavior in an azimuthal Oersted field could improve practical magnetic data storage devices.

Multiple 360° domain wall switching in thin ferromagnetic nanorings in a circular magnetic field

Micromagnetic simulations of the vortex switching process of thin ferromagnetic rings under the application of a circular field, as if created from a current-carrying wire passing through the ring center, reveal that for rings with sub-micron dimensions and thicknesses on the order of the exchange length, the vortex to vortex switching process occurs through the nucleation and annihilation of multiple 360° domain walls (DWs). The DWs can be characterized by their circulation relative to the vortex circulation; the DWs form in pairs with opposite topological indices. The DW with the same circulation annihilates first, which has a smaller energy barrier to overcome before annihilating. The contributions from both the exchange energy and demagnetization energy must be considered to predict which DW will annihilate first. Either wall could be annihilated by offsetting the current toward the wall being targeted.

The effect of Microstructure in Exchange Decoupling of SmCo5/Co bi-layers at low temperatures

Here, we investigated the influence of grain formation on the magnetization reversal of SmCo5/Co at low temperature. A set of SmCo5/Co bi-layer samples were fabricated under identical conditions on MgO(100) and glass substrates with a Cr underlayer. Analysis of each magnetic layer by an Atomic Force Microscope (AFM) reveals that MgO(100) results small and uniform grain formation of 23 nm in contrast to 57 nm on glass, and x-ray diffraction studies show that the sample on MgO(100) has high crystallinity with SmCo5(11 0) phase. At room temperature, both samples exhibit good hard magnetic properties with coercivity (HC) of 13.2 kOe and 12.5 kOe, and energy products (BH)max of 14.5 MGOe and 5.3 MGOe for samples on MgO(100) and glass, respectively. Low temperature hysteresis measurements show an exchange decoupling at low temperatures for the sample on glass, and this is due to the formation of large grains on glass that reduces the effective inter-grain exchange coupling between phases.