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Dive into the research topics where Nikhil V. Medhekar is active.

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Featured researches published by Nikhil V. Medhekar.


ACS Nano | 2010

Hydrogen Bond Networks in Graphene Oxide Composite Paper: Structure and Mechanical Properties

Nikhil V. Medhekar; Ashwin Ramasubramaniam; Rodney S. Ruoff; Vivek B. Shenoy

A multilayered composite structure formed by a random stacking of graphene oxide (GO) platelets is an attractive candidate for novel applications in nanoelectromechanical systems and paper-like composites. We employ molecular dynamics simulations with reactive force fields to elucidate the structural and mechanical properties of GO paper-like materials. We find that the large-scale properties of these composites are controlled by hydrogen bond networks that involve functional groups on individual GO platelets and water molecules within the interlayer cavities. Water content controls both the extent and collective strength of these interlayer hydrogen bond networks, thereby affecting the interlayer spacing and elastic moduli of the composite. Additionally, the chemical composition of the individual GO platelets also plays a critical role in establishing the mechanical properties of the composite--a higher density of functional groups leads to increased hydrogen bonding and a corresponding increase in stiffness. Our studies suggest the possibility of tuning the properties of GO composites by altering the density of functional groups on individual platelets, the water content, and possibly the functional groups participating in hydrogen bonding with interlayer water molecules.


Advanced Materials | 2013

Enhanced Charge Carrier Mobility in Two-Dimensional High Dielectric Molybdenum Oxide

Sivacarendran Balendhran; Junkai Deng; Jian Zhen Ou; Sumeet Walia; James Scott; Jianshi Tang; Kang L. Wang; Matthew R. Field; Salvy P. Russo; Serge Zhuiykov; Michael S. Strano; Nikhil V. Medhekar; Sharath Sriram; Madhu Bhaskaran; Kourosh Kalantar-zadeh

We demonstrate that the energy bandgap of layered, high-dielectric α-MoO(3) can be reduced to values viable for the fabrication of 2D electronic devices. This is achieved through embedding Coulomb charges within the high dielectric media, advantageously limiting charge scattering. As a result, devices with α-MoO(3) of ∼11 nm thickness and carrier mobilities larger than 1100 cm(2) V(-1) s(-1) are obtained.


ACS Nano | 2013

Electrochemical Control of Photoluminescence in Two-Dimensional MoS2 Nanoflakes

Yichao Wang; Jian Zhen Ou; Sivacarendran Balendhran; Adam F. Chrimes; Majid Mortazavi; David D. Yao; Matthew R. Field; Kay Latham; Vipul Bansal; James Friend; Serge Zhuiykov; Nikhil V. Medhekar; Michael S. Strano; Kourosh Kalantar-zadeh

Two-dimensional (2D) transition metal dichalcogenide semiconductors offer unique electronic and optical properties, which are significantly different from their bulk counterparts. It is known that the electronic structure of 2D MoS2, which is the most popular member of the family, depends on the number of layers. Its electronic structure alters dramatically at near atomically thin morphologies, producing strong photoluminescence (PL). Developing processes for controlling the 2D MoS2 PL is essential to efficiently harness many of its optical capabilities. So far, it has been shown that this PL can be electrically or mechanically gated. Here, we introduce an electrochemical approach to actively control the PL of liquid-phase-exfoliated 2D MoS2 nanoflakes by manipulating the amount of intercalated ions including Li(+), Na(+), and K(+) into and out of the 2D crystal structure. These ions are selected as they are crucial components in many bioprocesses. We show that this controlled intercalation allows for large PL modulations. The introduced electrochemically controlled PL will find significant applications in future chemical and bio-optical sensors as well as optical modulators/switches.


Nano Letters | 2015

Plasmon Resonances of Highly Doped Two-Dimensional MoS2

Yichao Wang; Jian Zhen Ou; Adam F. Chrimes; Benjamin J. Carey; Torben Daeneke; Manal M. Y. A. Alsaif; Majid Mortazavi; Serge Zhuiykov; Nikhil V. Medhekar; Madhu Bhaskaran; James Friend; Michael S. Strano; Kourosh Kalantar-zadeh

The exhibition of plasmon resonances in two-dimensional (2D) semiconductor compounds is desirable for many applications. Here, by electrochemically intercalating lithium into 2D molybdenum disulfide (MoS2) nanoflakes, plasmon resonances in the visible and near UV wavelength ranges are achieved. These plasmon resonances are controlled by the high doping level of the nanoflakes after the intercalation, producing two distinct resonance peak areas based on the crystal arrangements. The system is also benchmarked for biosensing using bovine serum albumin. This work provides a foundation for developing future 2D MoS2 based biological and optical units.


Journal of Physical Chemistry C | 2013

Bonding charge density and ultimate strength of monolayer transition metal dichalcogenides

Junwen Li; Nikhil V. Medhekar; Vivek B. Shenoy

Two-dimensional (2D) semiconducting transition metal dichalcogenides (TMDs) can withstand a large deformation without fracture or inelastic relaxation, making them attractive for application in novel strain-engineered and flexible electronic and optoelectronic devices. In this study, we characterize the mechanical response of monolayer group VI TMDs to large elastic deformation using first-principles density functional theory calculations. We find that the ultimate strength and the overall stress response of these 2D materials is strongly influenced by their chemical composition and loading direction. We demonstrate that differences in the observed mechanical behavior can be attributed to the spatial redistribution of the occupied hybridized electronic states in the region between the transition metal atom and the chalcogens. In spite of the strong covalent bonding between the transition metal and the chalcogens, we find that a simple linear relationship can be established to describe the dependence of the mechanical strength on the charge transfer from the transition metal atom to the chalcogens.


Journal of Physics: Condensed Matter | 2009

Stress-enhanced pattern formation on surfaces during low energy ion bombardment

Nikhil V. Medhekar; Wai-Lun Chan; Vivek B. Shenoy; Eric Chason

Ion-induced surface patterns (sputter ripples) are observed to grow more rapidly than predicted by current models, suggesting that additional sources of roughening may be involved. Using a linear stability analysis, we consider the contribution of ion-induced stress in the near surface region to the formation rate of ripples. This leads to a simple model that combines the effects of stress-induced roughening with the curvature-dependent erosion model of Bradley and Harper. The enhanced growth rate observed on Cu surfaces appears to be consistent with the magnitude of stress measured from wafer curvature measurements.


Journal of the American Chemical Society | 2012

Influence of Electric Field on SERS: Frequency Effects, Intensity Changes, and Susceptible Bonds

Sharath Sriram; Madhu Bhaskaran; Shijian Chen; Sasani Jayawardhana; Paul R. Stoddart; Jefferson Zhe Liu; Nikhil V. Medhekar; Kourosh Kalantar-zadeh; Arnan Mitchell

The fundamental mechanism proposed to explain surface-enhanced Raman scattering (SERS) relies on electromagnetic field enhancement at optical frequencies. In this work, we demonstrate the use of microfabricated, silver nanotextured electrode pairs to study, in situ, the influence of low frequency (5 mHz to 1 kHz) oscillating electric fields on the SERS spectra of thiophenol. This applied electric field is shown to affect SERS peak intensities and influence specific vibrational modes of the analyte. The applied electric field perturbs the polar analyte, thereby altering the scattering cross section. Peaks related to the sulfurous bond which binds the molecule to the silver nanotexture exhibit strong and distinguishable responses to the applied field, due to varying bending and stretching mechanics. Density functional theory simulations are used to qualitatively verify the experimental observations. Our experimental and simulation results demonstrate that the SERS spectral changes relate to electric field induced molecular reorientation, with dependence on applied field strength and frequency. This demonstration creates new opportunities for external dynamic tuning and multivariate control of SERS measurements.


Journal of Physics D | 2016

First principles many-body calculations of electronic structure and optical properties of SiC nanoribbons

Naresh Alaal; Vaideesh Loganathan; Nikhil V. Medhekar; Alok Shukla

A first principles many-body approach is employed to calculate the band structure and optical response of nanometer sized ribbons of SiC. Many-body effects are incorporated using the GW approximation, and excitonic effects are included using the Bethe-Salpeter equation. Both unpassivated and hydrogen passivated armchair SiC nanoribbons are studied. As a consequence of low dimensionality, large quasiparticle corrections are seen to the Kohn-Sham energy gaps. In both cases quasiparticle band gaps are increased by up to 2 eV, as compared to their Kohn-Sham energy values. Inclusion of electron-hole interactions modifies the absorption spectra significantly, giving rise to strongly bound excitonic peaks in these systems.The results suggest that hydrogen-passivated armchair SiC nanoribbons have the potential to be used in optoelectronic devices operating in the UV-Vis region of the spectrum. We also compute the formation energies of these nanoribbons as a function of their widths, and conclude that hydrogen-saturated ribbons will be much more stable as compared to the bare ones.


Scientific Reports | 2016

Cation/Anion Substitution in Cu2ZnSnS4 for Improved Photovoltaic Performance.

Balakrishna Ananthoju; Jeotikanta Mohapatra; Manoj K. Jangid; D. Bahadur; Nikhil V. Medhekar; M. Aslam

Cations and anions are replaced with Fe, Mn, and Se in CZTS in order to control the formations of the secondary phase, the band gap, and the micro structure of Cu2ZnSnS4. We demonstrate a simplified synthesis strategy for a range of quaternary chalcogenide nanoparticles such as Cu2ZnSnS4 (CZTS), Cu2FeSnS4 (CFTS), Cu2MnSnS4 (CMTS), Cu2ZnSnSe4 (CZTSe), and Cu2ZnSn(S0.5Se0.5)4 (CZTSSe) by thermolysis of metal chloride precursors using long chain amine molecules. It is observed that the crystal structure, band gap and micro structure of the CZTS thin films are affected by the substitution of anion/cations. Moreover, secondary phases are not observed and grain sizes are enhanced significantly with selenium doping (grain size ~1 μm). The earth-abundant Cu2MSnS4/Se4 (M = Zn, Mn and Fe) nanoparticles have band gaps in the range of 1.04–1.51 eV with high optical-absorption coefficients (~104 cm−1) in the visible region. The power conversion efficiency of a CZTS solar cell is enhanced significantly, from 0.4% to 7.4% with selenium doping, within an active area of 1.1 ± 0.1 cm2. The observed changes in the device performance parameters might be ascribed to the variation of optical band gap and microstructure of the thin films. The performance of the device is at par with sputtered fabricated films, at similar scales.


Journal of Applied Physics | 2012

Band engineering of Ni1−xMgxO alloys for photocathodes of high efficiency dye-sensitized solar cells

Junkai Deng; Majid Mortazavi; Nikhil V. Medhekar; Jefferson Zhe Liu

Density functional theory calculations were carried out for Ni1−xMgxO alloys using both GGA+U method and hybrid exchange-correlation functional HSE06. We find that the band gap of Ni1−xMgxO is a nonlinear function of MgO concentration with a strong bowing behavior at high Mg content. Band edge alignment is determined using heterojunction superlattice models. The valence-band-maximum of Ni1−xMgxO is shown to be tunable within a range of 0.90 eV. By comparing with the highest-occupied-molecular-orbital levels of some of the most widely used dye molecules, we propose that Ni1−xMgxO is a promising alternate to replace NiO photocathode in dye-sensitized solar cells with an enhanced open-circuit voltage and transparency of cathode films.

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Vivek B. Shenoy

University of Pennsylvania

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Junkai Deng

Xi'an Jiaotong University

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Ravichandar Babarao

Commonwealth Scientific and Industrial Research Organisation

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Alok Shukla

Indian Institute of Technology Bombay

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Balakrishna Ananthoju

Indian Institute of Technology Bombay

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