Nikolai V. Morozov
Russian Academy of Sciences
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Featured researches published by Nikolai V. Morozov.
power and timing modeling optimization and simulation | 2009
Yuri Stepchenkov; Yuri Diachenko; Victor N. Zakharov; Yuri Rogdestvenski; Nikolai V. Morozov; Dmitri Stepchenkov
The approaches to self-timed hardware design are presented. The conditions of intersystem integration of synchronous and self-timed devices are considered through the example of the quasi-delay-insensitive computing device development. This device performs functions of division and square root extraction. It operates with numbers of single and double precisions corresponding to the IEEE 754 standard.
east-west design and test symposium | 2015
Yuri Stepchenkov; Victor N. Zakharov; Yuri Rogdestvenski; Yuri Diachenko; Nikolai V. Morozov; Dmitri Stepchenkov
Speed-independent fused multiply-add unit as a coprocessor is represented. It purely conforms to IEEE 754 Standard. For minimization hardware and power consumption, a number of pipeline stages is reduced down to two. Wallace tree in the multiplier utilizes redundant self-timed code. Represented unit is developed on a base of standard 65-nm CMOS bulk process. It provides a performance up to 0.54 Gflops, and power consumption at level of 450 m W/Gflops.
east-west design and test symposium | 2015
Yuri Stepchenkov; Victor N. Zakharov; Yuri Diachenko; Nikolai V. Morozov; Dmitri Stepchenkov
Paper describes content and implementation features of the cell library intended for digital self-timed (speed-independent) circuit design. The library contains more than 200 cells. Self-timed triggers with unary input and triggers with forced output are presented. The library was certified by means of developed characterization tool and was practically tested in a set of digital signal processing units manufactured in differential CMOS processes.
Quantum Electronics | 1999
Nikolai V. Morozov; P B Sergeev; V. M. Reiterov
An experimental investigation was made of the dependence of the transmission of BaF{sub 2} and Al{sub 2}O{sub 3} samples on the intensity of KrF-laser radiation ({lambda} = 248 nm) pulses of 85 ns duration. The two-photon absorption coefficients were found at {lambda} = 248 nm and their values for these two crystals were 0.5 {+-} 0.2 and 2 {+-} 1 cm Gw{sup -1}. The surface and bulk laser breakdown thresholds were determined for these samples. (nonlinear optical phenomena)An experimental investigation was made of the dependence of the transmission of BaF2 and Al2O3 samples on the intensity of KrF-laser radiation (λ = 248 nm) pulses of 85 ns duration. The two-photon absorption coefficients were found at λ = 248 nm and their values for these two crystals were 0.5 ± 0.2 and 2 ± 1 cm Gw-1. The surface and bulk laser breakdown thresholds were determined for these samples.
Quantum Electronics | 1993
Arkady V. Amosov; V. S. Barabanov; S. Yu Gerasimov; Nikolai V. Morozov; P B Sergeev; V. N. Stepanchuk
The absorption of laser radiation at λ = 193, 248, and 353 nm in KU-1 quartz glass has been measured during the application to the test samples of an electron beam with an energy density up to 1 J/cm2 in a pulse 80 ns long. The induced optical density is a linear function of the specific power of the ionizing radiation applied to the sample. The coefficients of these linear proportionalities are 8, 4.6, and 0.5 cm2/GW at the specified wavelengths. Analysis shows that this coefficient gives the most comprehensive characterization of the optical properties of the material at the time at which the intense ionizing radiation is applied.
Quantum Electronics | 1994
Arkady V. Amosov; V. S. Barabanov; S. Yu Gerasimov; Nikolai V. Morozov; P B Sergeev; V. N. Stepanchuk
Quantum Electronics | 1999
Nikolai V. Morozov; V. M. Reiterov; P B Sergeev
Quantum Electronics | 2018
P B Sergeev; Nikolai V. Morozov; A N Kirichenko
Problems of advanced micro- and nanoelectronic systems development | 2018
I.A. Sokolov; Yu.V. Rozhdestvenskij; Yu.G. Diachenko; Yu.A. Stepchenkov; Nikolai V. Morozov; D.Yu. Stepchenkov; D.Yu. Djachenko
Problems of Perspective Micro- and Nanoelectronic Systems Development - 2010 (ÌÝÑ-2010) | 2010
Yu.A. Stepchenkov; Yu.G. Diachenko; Yu.V. Rozhdestvenskij; Nikolai V. Morozov; D.Yu. Stepchenkov