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Dive into the research topics where Nikolai V. Morozov is active.

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Featured researches published by Nikolai V. Morozov.


power and timing modeling optimization and simulation | 2009

Quasi-delay-insensitive computing device: methodological aspects and practical implementation

Yuri Stepchenkov; Yuri Diachenko; Victor N. Zakharov; Yuri Rogdestvenski; Nikolai V. Morozov; Dmitri Stepchenkov

The approaches to self-timed hardware design are presented. The conditions of intersystem integration of synchronous and self-timed devices are considered through the example of the quasi-delay-insensitive computing device development. This device performs functions of division and square root extraction. It operates with numbers of single and double precisions corresponding to the IEEE 754 standard.


east-west design and test symposium | 2015

Speed-independent floating point coprocessor

Yuri Stepchenkov; Victor N. Zakharov; Yuri Rogdestvenski; Yuri Diachenko; Nikolai V. Morozov; Dmitri Stepchenkov

Speed-independent fused multiply-add unit as a coprocessor is represented. It purely conforms to IEEE 754 Standard. For minimization hardware and power consumption, a number of pipeline stages is reduced down to two. Wallace tree in the multiplier utilizes redundant self-timed code. Represented unit is developed on a base of standard 65-nm CMOS bulk process. It provides a performance up to 0.54 Gflops, and power consumption at level of 450 m W/Gflops.


east-west design and test symposium | 2015

Cell library for speed-independent VLSI

Yuri Stepchenkov; Victor N. Zakharov; Yuri Diachenko; Nikolai V. Morozov; Dmitri Stepchenkov

Paper describes content and implementation features of the cell library intended for digital self-timed (speed-independent) circuit design. The library contains more than 200 cells. Self-timed triggers with unary input and triggers with forced output are presented. The library was certified by means of developed characterization tool and was practically tested in a set of digital signal processing units manufactured in differential CMOS processes.


Quantum Electronics | 1999

Nonlinear absorption and optical strength of BaF{sub 2} and Al{sub 2}O{sub 3} at the wavelength of 248 nm

Nikolai V. Morozov; P B Sergeev; V. M. Reiterov

An experimental investigation was made of the dependence of the transmission of BaF{sub 2} and Al{sub 2}O{sub 3} samples on the intensity of KrF-laser radiation ({lambda} = 248 nm) pulses of 85 ns duration. The two-photon absorption coefficients were found at {lambda} = 248 nm and their values for these two crystals were 0.5 {+-} 0.2 and 2 {+-} 1 cm Gw{sup -1}. The surface and bulk laser breakdown thresholds were determined for these samples. (nonlinear optical phenomena)An experimental investigation was made of the dependence of the transmission of BaF2 and Al2O3 samples on the intensity of KrF-laser radiation (λ = 248 nm) pulses of 85 ns duration. The two-photon absorption coefficients were found at λ = 248 nm and their values for these two crystals were 0.5 ± 0.2 and 2 ± 1 cm Gw-1. The surface and bulk laser breakdown thresholds were determined for these samples.


Quantum Electronics | 1993

Electron-beam-induced absorption of laser radiation at λ = 193, 248, and 353 nm in quartz glass

Arkady V. Amosov; V. S. Barabanov; S. Yu Gerasimov; Nikolai V. Morozov; P B Sergeev; V. N. Stepanchuk

The absorption of laser radiation at λ = 193, 248, and 353 nm in KU-1 quartz glass has been measured during the application to the test samples of an electron beam with an energy density up to 1 J/cm2 in a pulse 80 ns long. The induced optical density is a linear function of the specific power of the ionizing radiation applied to the sample. The coefficients of these linear proportionalities are 8, 4.6, and 0.5 cm2/GW at the specified wavelengths. Analysis shows that this coefficient gives the most comprehensive characterization of the optical properties of the material at the time at which the intense ionizing radiation is applied.


Quantum Electronics | 1994

Optical breakdown of quartz glass by XeF laser radiation

Arkady V. Amosov; V. S. Barabanov; S. Yu Gerasimov; Nikolai V. Morozov; P B Sergeev; V. N. Stepanchuk


Quantum Electronics | 1999

Nonlinear absorption and optical strength of BaF2 and Al2O3 at the wavelength of 248 nm

Nikolai V. Morozov; V. M. Reiterov; P B Sergeev


Quantum Electronics | 2018

Formation of a carbon nanofilm on oil-coated KU-1 glass annealed by KrF laser radiation

P B Sergeev; Nikolai V. Morozov; A N Kirichenko


Problems of advanced micro- and nanoelectronic systems development | 2018

Delay-Insensitive Floating Point Multiply-Add-Subtract Unit

I.A. Sokolov; Yu.V. Rozhdestvenskij; Yu.G. Diachenko; Yu.A. Stepchenkov; Nikolai V. Morozov; D.Yu. Stepchenkov; D.Yu. Djachenko


Problems of Perspective Micro- and Nanoelectronic Systems Development - 2010 (ÌÝÑ-2010) | 2010

Self-Timed Computing Device for High-Reliable Applications

Yu.A. Stepchenkov; Yu.G. Diachenko; Yu.V. Rozhdestvenskij; Nikolai V. Morozov; D.Yu. Stepchenkov

Collaboration


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P B Sergeev

Russian Academy of Sciences

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V. S. Barabanov

Russian Academy of Sciences

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Dmitri Stepchenkov

Russian Academy of Sciences

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V. M. Reiterov

Vavilov State Optical Institute

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Victor N. Zakharov

Russian Academy of Sciences

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Yuri Diachenko

Russian Academy of Sciences

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Yuri Stepchenkov

Russian Academy of Sciences

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Yuri Rogdestvenski

Russian Academy of Sciences

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