Ningfeng Huang

Electrical and Optical Characterization of Surface Passivation in GaAs Nanowires

We report a systematic study of carrier dynamics in Al(x)Ga(1-x)As-passivated GaAs nanowires. With passivation, the minority carrier diffusion length (L(diff)) increases from 30 to 180 nm, as measured by electron beam induced current (EBIC) mapping, and the photoluminescence (PL) lifetime increases from sub-60 ps to 1.3 ns. A 48-fold enhancement in the continuous-wave PL intensity is observed on the same individual nanowire with and without the Al(x)Ga(1-x)As passivation layer, indicating a significant reduction in surface recombination. These results indicate that, in passivated nanowires, the minority carrier lifetime is not limited by twin stacking faults. From the PL lifetime and minority carrier diffusion length, we estimate the surface recombination velocity (SRV) to range from 1.7 × 10(3) to 1.1 × 10(4) cm·s(-1), and the minority carrier mobility μ is estimated to lie in the range from 10.3 to 67.5 cm(2) V(-1) s(-1) for the passivated nanowires.

GaAs Nanowire Array Solar Cells with Axial p–i–n Junctions

Because of unique structural, optical, and electrical properties, solar cells based on semiconductor nanowires are a rapidly evolving scientific enterprise. Various approaches employing III-V nanowires have emerged, among which GaAs, especially, is under intense research and development. Most reported GaAs nanowire solar cells form p-n junctions in the radial direction; however, nanowires using axial junction may enable the attainment of high open circuit voltage (Voc) and integration into multijunction solar cells. Here, we report GaAs nanowire solar cells with axial p-i-n junctions that achieve 7.58% efficiency. Simulations show that axial junctions are more tolerant to doping variation than radial junctions and lead to higher Voc under certain conditions. We further study the effect of wire diameter and junction depth using electrical characterization and cathodoluminescence. The results show that large diameter and shallow junctions are essential for a high extraction efficiency. Our approach opens up great opportunity for future low-cost, high-efficiency photovoltaics.

Broadband absorption of semiconductor nanowire arrays for photovoltaic applications

We use electromagnetic simulations to carry out a systematic study of broadband absorption in vertically-aligned semiconductor nanowire arrays for photovoltaic applications. We study six semiconductor materials that are commonly used for solar cells. We optimize the structural parameters of each nanowire array to maximize the ultimate efficiency. We plot the maximal ultimate efficiency as a function of height to determine how it approaches the perfect-absorption limit. We further show that the ultimate efficiencies of optimized nanowire arrays exceed those of equal-height thin films for all six materials and over a wide range of heights from 100?nm to 100??m.

Effect of aperiodicity on the broadband reflection of silicon nanorod structures for photovoltaics.

We carry out a systematic numerical study of the effects of aperiodicity on silicon nanorod anti-reflection structures. We use the scattering matrix method to calculate the average reflection loss over the solar spectrum for periodic and aperiodic arrangements of nanorods. We find that aperiodicity can either improve or deteriorate the anti-reflection performance, depending on the nanorod diameter. We use a guided random-walk algorithm to design optimal aperiodic structures that exhibit lower reflection loss than both optimal periodic and random aperiodic structures.

Tandem Solar Cells Using GaAs Nanowires on Si: Design, Fabrication, and Observation of Voltage Addition

Multijunction solar cells provide us a viable approach to achieve efficiencies higher than the Shockley-Queisser limit. Due to their unique optical, electrical, and crystallographic features, semiconductor nanowires are good candidates to achieve monolithic integration of solar cell materials that are not lattice-matched. Here, we report the first realization of nanowire-on-Si tandem cells with the observation of voltage addition of the GaAs nanowire top cell and the Si bottom cell with an open circuit voltage of 0.956 V and an efficiency of 11.4%. Our simulation showed that the current-matching condition plays an important role in the overall efficiency. Furthermore, we characterized GaAs nanowire arrays grown on lattice-mismatched Si substrates and estimated the carrier density using photoluminescence. A low-resistance connecting junction was obtained using n(+)-GaAs/p(+)-Si heterojunction. Finally, we demonstrated tandem solar cells based on top GaAs nanowire array solar cells grown on bottom planar Si solar cells. The reported nanowire-on-Si tandem cell opens up great opportunities for high-efficiency, low-cost multijunction solar cells.

Light-Assisted, Templated Self-Assembly of Gold Nanoparticle Chains

We experimentally demonstrate the technique of light-assisted, templated self-assembly (LATS) to trap and assemble 200 nm diameter gold nanoparticles. We excite a guided-resonance mode of a photonic-crystal slab with 1.55 μm laser light to create an array of optical traps. Unlike our previous demonstration of LATS with polystyrene particles, we find that the interparticle interactions play a significant role in the resulting particle patterns. Despite a two-dimensionally periodic intensity profile in the slab, the particles form one-dimensional chains whose orientations can be controlled by the incident polarization of the light. The formation of chains can be understood in terms of a competition between the gradient force due to the excitation of the mode in the slab and optical binding between particles.

Carrier dynamics and doping profiles in GaAs nanosheets

We have recently demonstrated that GaAs nanosheets can be grown by metal-organic chemical vapor deposition (MOCVD). Here, we investigate these nanosheets by secondary electron scanning electron microscopy (SE-SEM) and electron beam induced current (EBIC) imaging. An abrupt boundary is observed between an initial growth region and an overgrowth region in the nanosheets. The SE-SEM contrast between these two regions is attributed to the inversion of doping at the boundary. EBIC mapping reveals a p-n junction formed along the boundary between these two regions. Rectifying I–V behavior is observed across the boundary further indicating the formation of a p-n junction. The electron concentration (ND) of the initial growth region is around 1 × 1018 cm−3, as determined by both Hall effect measurements and low temperature photoluminescence (PL) spectroscopy. Based on the EBIC data, the minority carrier diffusion length of the nanosheets is 177 nm, which is substantially longer than the corresponding length in unpassivated GaAs nanowires measured previously.

Design of Passivation Layers on Axial Junction GaAs Nanowire Solar Cells

We design a surface passivation scheme for axial junction GaAs nanowire solar cells and simulate its performance by coupled optical and electrical simulations. This design uses a wide bandgap AlGaAs shell layer to generate modulation doping in the active region and protect photogenerated carriers from the surface and top contact. The design has both excellent optical and electrical properties and achieves 21.3% power conversion efficiency when using realistic material parameters, which is 2.7 times higher than an optimized bare nanowire. Furthermore, the design is largely insensitive to surface quality and junction position, assuming moderate bulk material quality.

Near-Field, On-Chip Optical Brownian Ratchets

Nanoparticles in aqueous solution are subject to collisions with solvent molecules, resulting in random, Brownian motion. By breaking the spatiotemporal symmetry of the system, the motion can be rectified. In nature, Brownian ratchets leverage thermal fluctuations to provide directional motion of proteins and enzymes. In man-made systems, Brownian ratchets have been used for nanoparticle sorting and manipulation. Implementations based on optical traps provide a high degree of tunability along with precise spatiotemporal control. Here, we demonstrate an optical Brownian ratchet based on the near-field traps of an asymmetrically patterned photonic crystal. The system yields over 25 times greater trap stiffness than conventional optical tweezers. Our technique opens up new possibilities for particle manipulation in a microfluidic, lab-on-chip environment.

Optical Epitaxial Growth of Gold Nanoparticle Arrays

We use an optical analogue of epitaxial growth to assemble gold nanoparticles into 2D arrays. Particles are attracted to a growth template via optical forces and interact through optical binding. Competition between effects determines the final particle arrangements. We use a Monte Carlo model to design a template that favors growth of hexagonal particle arrays. We experimentally demonstrate growth of a highly stable array of 50 gold particles with 200 nm diameter, spaced by 1.1 μm.