Nir Yaacobi-Gross

Diketopyrrolopyrrole-Diketopyrrolopyrrole-Based Conjugated Copolymer for High-Mobility Organic Field-Effect Transistors

In this communication, we report the synthesis of a novel diketopyrrolopyrrole-diketopyrrolopyrrole (DPP-DPP)-based conjugated copolymer and its application in high-mobility organic field-effect transistors. Copolymerization of DPP with DPP yields a copolymer with exceptional properties such as extended absorption characteristics (up to ~1100 nm) and field-effect electron mobility values of >1 cm(2) V(-1) s(-1). The synthesis of this novel DPP-DPP copolymer in combination with the demonstration of transistors with extremely high electron mobility makes this work an important step toward a new family of DPP-DPP copolymers for application in the general area of organic optoelectronics.

Fused dithienogermolodithiophene low band gap polymers for high-performance organic solar cells without processing additives.

We report the synthesis of a novel ladder-type fused ring donor, dithienogermolodithiophene, in which two thieno[3,2-b]thiophene units are held coplanar by a bridging dialkyl germanium. Polymerization of this extended monomer with N-octylthienopyrrolodione by Stille polycondensation afforded a polymer, pDTTG-TPD, with an optical band gap of 1.75 eV combined with a high ionization potential. Bulk heterojunction solar cells based upon pDTTG-TPD:PC(71)BM blends afforded efficiencies up to 7.2% without the need for thermal annealing or processing additives.

Hole‐Transporting Transistors and Circuits Based on the Transparent Inorganic Semiconductor Copper(I) Thiocyanate (CuSCN) Processed from Solution at Room Temperature

The wide bandgap and highly transparent inorganic compound copper(I) thiocyanate (CuSCN) is used for the first time to fabricate p-type thin-film transistors processed from solution at room temperature. By combining CuSCN with the high-k relaxor ferroelectric polymeric dielectric P(VDF-TrFE-CFE), we demonstrate low-voltage transistors with hole mobilities on the order of 0.1 cm(2) V(-1) s(-1) . By integrating two CuSCN transistors, unipolar logic NOT gates are also demonstrated.

High‐Efficiency, Solution‐Processed, Multilayer Phosphorescent Organic Light‐Emitting Diodes with a Copper Thiocyanate Hole‐Injection/Hole‐Transport Layer

Copper thiocyanate (CuSCN) is introduced as a hole-injection/hole-transport layer (HIL/HTL) for solution-processed organic light-emitting diodes (OLEDs). The OLED devices reported here with CuSCN as HIL/HTL perform significantly better than equivalent devices fabricated with a PEDOT:PSS HIL/HTL, and solution-processed, phosphorescent, small-molecule, green OLEDs with maximum luminance ≥10 000 cd m(-2) , maximum luminous efficiency ≤50 cd A(-1) , and maximum luminous power efficiency ≤55 lm W(-1) are demonstrated.

Copper thiocyanate: An attractive hole transport/extraction layer for use in organic photovoltaic cells

We report the advantageous properties of the inorganic molecular semiconductor copper(I) thiocyanate (CuSCN) for use as a hole collection/transport layer (HTL) in organic photovoltaic (OPV) cells. CuSCN possesses desirable HTL energy levels [i.e., valence band at −5.35 eV, 0.35 eV deeper than poly(3,4-ethylenedioxythiophene):polystyrenesulfonate (PEDOT:PSS)], which produces a 17% increase in power conversion efficiency (PCE) relative to PEDOT:PSS-based devices. In addition, a two-fold increase in shunt resistance for the solar cells measured in dark conditions is achieved. Ultimately, CuSCN enables polymer:fullerene based OPV cells to achieve PCE > 8%. CuSCN continues to offer promise as a chemically stable and straightforward replacement for the commonly used PEDOT:PSS.

Efficient organic solar cells using copper(I) iodide (CuI) hole transport layers

We report the fabrication of high power conversion efficiency (PCE) polymer/fullerene bulk heterojunction (BHJ) photovoltaic cells using solution-processed Copper (I) Iodide (CuI) as hole transport layer (HTL). Our devices exhibit a PCE value of ∼5.5% which is equivalent to that obtained for control devices based on the commonly used conductive polymer poly(3,4-ethylenedioxythiophene): polystyrenesulfonate as HTL. Inverted cells with PCE >3% were also demonstrated using solution-processed metal oxide electron transport layers, with a CuI HTL evaporated on top of the BHJ. The high optical transparency and suitable energetics of CuI make it attractive for application in a range of inexpensive large-area optoelectronic devices.

Incorporation of benzocarborane into conjugated polymer systems: synthesis, characterisation and optoelectronic properties

We present the novel 1,4-difunctionalisation of benzocarborane with organometallic groups suitable for cross-coupling and its subsequent insertion for the first time into conjugated polymer backbones. Copolymers with solubilised cyclopentadithiophene and diketopyrrolopyrrole derivatives were prepared by Stille polymerisation in good molecular weight. The physical, material and optoelectronic properties of the resulting polymers were investigated, demonstrating that benzocarborane acts similarly to a stabilised, electron-deficient cis-diene linker. We also report the first polymer field effect transistors incorporating a benzocarborane in the backbone.

Effect of Chalcogens on Electronic and Photophysical Properties of Vinylene-Based Diketopyrrolopyrrole Copolymers.

Three vinylene linked diketopyrrolopyrrole based donor-acceptor (D-A) copolymers have been synthesized with phenyl, thienyl, and selenyl units as donors. Optical and electronic properties were investigated with UV-vis absorption spectroscopy, cyclic voltammetry, near edge X-ray absorption spectroscopy, organic field effect transistor (OFET) measurements, and density functional theory (DFT) calculations. Optical and electrochemical band gaps decrease in the order phenyl, thienyl, and selenyl. Only phenyl-based polymers are nonplanar, but the main contributor to the larger band gap is electronic, not structural effects. Thienyl and selenyl polymers exhibit ambipolar charge transport but with higher hole than electron mobility. Experimental and theoretical results predict the selenyl system to have the best transport properties, but OFET measurements prove the thienyl system to be superior with p-channel mobility as high as 0.1 cm(2) V(-1) s(-1).

Flexible Blade‐Coated Multicolor Polymer Light‐Emitting Diodes for Optoelectronic Sensors

A method to print two materials of different functionality during the same printing step is presented. In printed electronics, devices are built layer by layer and conventionally only one type of material is deposited in one pass. Here, the challenges involving printing of two emissive materials to form polymer light-emitting diodes (PLEDs) that emit light of different wavelengths without any significant changes in the device characteristics are described. The surface-energy-patterning technique is utilized to print materials in regions of interest. This technique proves beneficial in reducing the amount of ink used during blade coating and improving the reproducibility of printed films. A variety of colors (green, red, and near-infrared) are demonstrated and characterized. This is the first known attempt to print multiple materials by blade coating. These devices are further used in conjunction with a commercially available photodiode to perform blood oxygenation measurements on the wrist, where common accessories are worn. Prior to actual application, the threshold conditions for each color are discussed, in order to acquire a stable and reproducible photoplethysmogram (PPG) signal. Finally, based on the conditions, PPG and oxygenation measurements are successfully performed on the wrist with green and red PLEDs.

Solution-processed p-type copper(I) thiocyanate (CuSCN) for low-voltage flexible thin-film transistors and integrated inverter circuits

We report on low operating voltage thin-film transistors (TFTs) and integrated inverters based on copper(I) thiocyanate (CuSCN) layers processed from solution at low temperature on freestanding plastic foils. As-fabricated coplanar bottom-gate and staggered top-gate TFTs exhibit hole-transporting characteristics with average mobility values of 0.0016 cm2 V1 s 1 and 0.013 cm2 V1 s 1 , respectively, current on/off ratio in the range 102 –104 , and maximum operating voltages between 3.5 and 10 V, depending on the gate dielectric employed. The promising TFT characteristics enable fabrication of unipolar NOT gates on flexible free-standing plastic substrates with voltage gain of 3.4 at voltages as low as 3.5 V. Importantly, discrete CuSCN transistors and integrated logic inverters remain fully functional even when mechanically bent to a tensile radius of 4 mm, demonstrating the potential of the technology for flexible electronics.