Nita Dilawar Sharma

Fabrication of non-polar GaN based highly responsive and fast UV photodetector

We report the fabrication of ultraviolet photodetector on non-polar (11–20), nearly stress free, Gallium Nitride (GaN) film epitaxially grown on r-plane (1–102) sapphire substrate. High crystalline film leads to the formation of two faceted triangular islands like structures on the surface. The fabricated GaN ultraviolet photodetector exhibited a high responsivity of 340 mA/W at 5 V bias at room temperature which is the best performance reported for a-GaN/r-sapphire films. A detectivity of 1.24 × 109 Jones and noise equivalent power of 2.4 × 10−11 WHz−1/2 were also attained. The rise time and decay time of 280 ms and 450 ms have been calculated, respectively, which were the fastest response times reported for non-polar GaN ultraviolet photodetector. Such high performance devices substantiate that non-polar GaN can serve as an excellent photoconductive material for ultraviolet photodetector based applications.

Highly c-axis oriented growth of GaN film on sapphire (0001) by laser molecular beam epitaxy using HVPE grown GaN bulk target

Growth temperature dependant surface morphology and crystalline properties of the epitaxial GaN layers grown on pre-nitridated sapphire (0001) substrates by laser molecular beam epitaxy (LMBE) were investigated in the range of 500–750 °C. The grown GaN films were characterized using high resolution x-ray diffraction, atomic force microscopy (AFM), micro-Raman spectroscopy, and secondary ion mass spectroscopy (SIMS). The x-ray rocking curve full width at a half maximum (FWHM) value for (0002) reflection dramatically decreased from 1582 arc sec to 153 arc sec when the growth temperature was increased from 500 °C to 600 °C and the value further decreased with increase of growth temperature up to 720 °C. A highly c-axis oriented GaN epitaxial film was obtained at 720 °C with a (0002) plane rocking curve FWHM value as low as 102 arc sec. From AFM studies, it is observed that the GaN grain size also increased with increasing growth temperature and flat, large lateral grains of size 200-300 nm was obtained for t...

Anharmonic behavior and structural phase transition in Yb2O3

The investigation of structural phase transition and anharmonic behavior of Yb2O3 has been carried out by high-pressure and temperature dependent Raman scattering studies respectively. In situ Raman studies under high pressure were carried out in a diamond anvil cell at room temperature which indicate a structural transition from cubic to hexagonal phase at and above 20.6 GPa. In the decompression cycle, Yb2O3 retained its high pressure phase. We have observed a Stark line in the Raman spectra at 337.5 cm−1 which arises from the electronic transition between 2 F 5/2 and 2 F 7/2 multiplates of Yb3+ (4f 13) levels. These were followed by temperature dependent Raman studies in the range of 80–440 K, which show an unusual mode hardening with increasing temperature. The hardening of the most dominant mode (T g + A g ) was analyzed in light of the theory of anharmonic phonon-phonon interaction and thermal expansion of the lattice. Using the mode Gruneisen parameter obtained from high pressure Raman measurements; we have calculated total anharmonicity of the T g + A g mode from the temperature dependent Raman data.

High pressure behavior of nano-crystalline CeO2 up to 35 GPa: a Raman investigation

The present paper reports the results of in situ Raman studies carried out on nano-crystalline CeO2 up to a pressure of 35 GPa at room temperature. The material was characterized at ambient conditions using X-ray diffraction and Raman spectroscopy and was found to have a cubic structure. We observed the Raman peak at ambient at 465 cm−1, which is characteristic of the cubic structure of the material. The sample was pressurized using a diamond anvil cell using ruby fluorescence as the pressure monitor, and the phase evolution was tracked by Raman spectroscopy. With an increase in the applied pressure, the cubic band was seen to steadily shift to higher wavenumbers. However, we observed the appearance of a number of new peaks around a pressure of about 34.7 GPa. CeO2 was found to undergo a phase transition to an orthorhombic α -PbCl2-type structure at this pressure. With the release of the applied pressure, the observed peaks steadily shift to lower wavenumbers. On decompression, the high pressure phase existed down to a total release of pressure.

Temperature dependent variations of phonon interactions in nanocrystalline cerium oxide

The temperature dependent anharmonic behavior of the phonon modes of nanocrystalline CeO2 was investigated in the temperature range of 80-440 K. The anharmonic constants have been derived from the shift in phonon modes fitted to account for the anharmonic contributions as well as the thermal expansion contribution using the high pressure parameters derived from our own high pressure experimental data reported previously. The total anharmonicity has also been estimated from the true anharmonicity as well as quasiharmonic component. In the line-width variation analysis, the cubic anharmonic term was found to dominate the quartic term. Finally, the phonon lifetime also reflected the trend so observed.

Raman scattering of rare earth sesquioxide Ho2O3: A pressure and temperature dependent study

Pressure and temperature dependent Raman scattering studies on Ho2O3 have been carried out to investigate the structural transition and the anharmonic behavior of the phonons. Ho2O3 undergoes a transition from cubic to monoclinic phase above 15.5 GPa, which is partially reversible on decompression. The anharmonic behavior of the phonon modes of Ho2O3 from 80 K to 440 K has been investigated. We find an anomalous line-width change with temperature. The mode Gruneisen parameter of bulk Ho2O3 was estimated from high pressure Raman investigation up to 29 GPa. Furthermore, the anharmonic components were calculated from the temperature dependent Raman scattering.

Establishing a Continuous Chain of Traceability for Pressure Measurements up to 40 MPa

Abstract: An Ultrasonic Interferometer Manometer (UIM) has been in use as the primary pressure standard at the National Physical Laboratory in India (NPLI) for absolute and gauge modes up to 130 kPa since 1982. However, the primary pneumatic pressure standard in gauge mode up to 6 MPa was based on the performance of controlled clearance Piston Gauges (CCPG). The uncertainty of measurements in UIM and CCPG were of great concern in establishing the primary pneumatic pressure scale of NPLI. To bridge the gap between the high vacuum, both in absolute and gauge modes, pneumatic pressure and hydraulic pressure up to 1 GPa, a conscientious attempt has been made to establish a uniform scale in the entire pressure range from 1 × 10−4 to 1 × 109 Pa that utilizes the UIM as the primary pressure standard. This paper presents the results of this entire systematic exercise up to a pressure of 40 MPa, in terms of the characterization of the piston gauges by the method of cross floating in the overlapping pressure ranges, so that the measurement uncertainty in one range is transferred to the other range. We have evaluated the effective area (Ap) as a function of measured pressure (p) and estimated the zero pressure effective area (Ao) and pressure distortion coefficient (λ) with an uncertainty statement, and then linked them to establish a new traceability chart which has superseded the old NPLI pressure scale. These established uncertainties are now included in the key comparison database (KCDB) maintained by the Bureau International des Poids et Mesures (BIPM).

A comparative approach for the characterization of a pneumatic piston gauge up to 8 MPa using finite element calculations

This paper reports the behavior of a well-characterized pneumatic piston gauge in the pressure range up to 8 MPa through simulation using finite element method (FEM). Experimentally, the effective area of this piston gauge has been estimated by cross-floating to obtain A0 and λ. The FEM technique addresses this problem through simulation and optimization with standard commercial software (ANSYS) where the material properties of the piston and cylinder, dimensional measurements, etc are used as the input parameters. The simulation provides the effective area Ap as a function of pressure in the free deformation mode. From these data, one can estimate Ap versus pressure and thereby Ao and λ. Further, we have carried out a similar theoretical calculation of Ap using the conventional method involving the Dadsons as well as Johnson–Newhall equations. A comparison of these results with the experimental results has been carried out.

Temperature dependent Raman investigation of multiwall carbon nanotubes

We report anomalous observations in our investigations of the temperature dependent Raman spectroscopic measurement of multiwall carbon nanotubes. The Micro-Raman spectra were recorded with the laser source having 514.5 nm wavelength and within the temperature range of 80–440 K. The major Raman bands, the G and D band, are observed at 1584 and 1348 cm−1, respectively, at ambient. The absence of the radial breathing mode confirms the multiwall nature of carbon nanotubes. It has been observed that with an increase in the temperature above 120 K, there is a shift in Raman bands towards the higher wave-number region. However, a drop in the G and D bands is observed from 80 to 120 K which was not observed for the second order band. Thereafter, all Raman modes exhibited mode hardening up to about 320 K followed by mild softening of the phonon modes. Linear temperature coefficients were found to have higher contribution to mode hardening as compared to higher order terms. Total anharmonicity estimation shows a predominant effect of the quasi-harmonic term as compared to the true anharmonic term.We report anomalous observations in our investigations of the temperature dependent Raman spectroscopic measurement of multiwall carbon nanotubes. The Micro-Raman spectra were recorded with the laser source having 514.5 nm wavelength and within the temperature range of 80–440 K. The major Raman bands, the G and D band, are observed at 1584 and 1348 cm−1, respectively, at ambient. The absence of the radial breathing mode confirms the multiwall nature of carbon nanotubes. It has been observed that with an increase in the temperature above 120 K, there is a shift in Raman bands towards the higher wave-number region. However, a drop in the G and D bands is observed from 80 to 120 K which was not observed for the second order band. Thereafter, all Raman modes exhibited mode hardening up to about 320 K followed by mild softening of the phonon modes. Linear temperature coefficients were found to have higher contribution to mode hardening as compared to higher order terms. Total anharmonicity estimation shows a p...

Erratum: “Fabrication of non-polar GaN based highly responsive and fast UV photodetector” [Appl. Phys. Lett. 110, 103507 (2017)]

We report the fabrication of ultraviolet photodetector on non-polar (11–20), nearly stress free, Gallium Nitride (GaN) film epitaxially grown on r-plane (1–102) sapphire substrate. High crystalline film leads to the formation of two faceted triangular islands like structures on the surface. The fabricated GaN ultraviolet photodetector exhibited a high responsivity of 340 mA/W at 5 V bias at room temperature which is the best performance reported for a-GaN/r-sapphire films. A detectivity of 1.24 × 109 Jones and noise equivalent power of 2.4 × 10−11 WHz−1/2 were also attained. The rise time and decay time of 280 ms and 450 ms have been calculated, respectively, which were the fastest response times reported for non-polar GaN ultraviolet photodetector. Such high performance devices substantiate that non-polar GaN can serve as an excellent photoconductive material for ultraviolet photodetector based applications.