Nobuhiko Nakamura

Frank Partial Dislocation in 4H-SiC Epitaxial Layer by MSE Method

We have been trying to improve a quality of crystal, using the metastable solvent epitaxy (MSE) method, one of the solution methods. In MSE, a Frank-type fault is formed by conversion of a threading screw dislocation (TSD) in the substrate. To study the status of the growth, we performed plane-viewed TEM observation. Analysis of Burgers vectors in the TEM image showed Frank PDs (Partial Dislocations) which do not include a components and Frank PDs which include a components. The total Burgers vectors of Frank-type fault including a components are represented as b=a/3+c, which indicates some TSDs in the substrate also include a components.