Nobuhiko Sawaki | Researchain

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Featured researches published by Nobuhiko Sawaki.

Archive | 1997

Iii-v compd. semiconductor, manufacture thereof and semiconductor element

Hisayoshi Hanai; Kazumasa Hiramatsu; Naoyoshi Maeda; Hidetada Matsushima; Yoshinobu Ono; Nobuhiko Sawaki; 尚良前田; 善伸小野; 和政平松; 秀忠松嶋; 宣彦澤木; 寿佳花井

Journal of Electron Microscopy | 2000

Gradual tilting of crystallographic orientation and configuration of dislocations in GaN selectively grown by vapour phase epitaxy methods

Noriyuki Kuwano; Keisuke Tsukamoto; Wataru Taki; Kayo Horibuchi; Kensuke Oki; Yasutoshi Kawaguchi; Takumi Shibata; Nobuhiko Sawaki; Kazumasa Hiramatsu

Archive | 2000

Iii-v compound semiconductor and manufacturing method thereof

Kazumasa Hiramatsu; Yasutoshi Kawaguchi; Naoyoshi Maeda; Hideto Miyake; Yoshinobu Ono; Nobuhiko Sawaki; Hiroki Sone; 秀人三宅; 尚良前田; 善伸小野; 靖利川口; 和政平松; 曽根弘樹; 宣彦澤木

Archive | 2003

Nitride semiconductor crystalline layer, manufacturing method therefor, and substrate for manufacturing the same

Yoshio Honda; Y. Nishimura; Nobuhiko Sawaki; 善央本田; 宣彦澤木; 慶之西村

Archive | 2006

Base material for luminescent layer formation, luminous body, and luminescent material

Akira Kiyama; Rentaro Mori; Hiroya Inaoka; Masayuki Ichiyanagi; Nobuhiko Sawaki; Yoshio Honda; Yasuyuki Yanase

Archive | 2006

Substrat zur Ausbildung einer Lichtemissionsschicht, Lichtemissionsvorrichtung und Lichtemissionsmaterial Substrate to form a light emitting layer, light emitting device and light emission material

Yoshio Honda; Masayuki Ichiyanagi; Hiroya Inaoka; Akira Kiyama; Rentaro Mori; Nobuhiko Sawaki; Yasuyuki Vanase

Archive | 2005

Substrate for luminescent layer formation, luminant and luminescent substance

Yoshio Honda; Masayuki Ichiyanagi; Hiroya Inaoka; Akira Kiyama; Rentaro Mori; Nobuhiko Sawaki; Yasuyuki Yanase; 昌幸一柳; 明木山; 善央本田; 康行柳瀬; 連太郎森; 宣彦澤木; 宏弥稲岡

Archive | 2003

工学部・工学研究科の経験した教育評価 : 大学評価・学位授与機構による分野別教育評価を受けて

宣彦澤木; Nobuhiko Sawaki

Japanese journal of applied physics. Pt. 1, Regular papers & short notes | 2001

Raman Scattering Study of InGaN Grown by Metalorganic Vapor Phase Epitaxy on (0001) Sapphire Substrates : Optical Properties of Condensed Matter

Touko Sugiura; Yasutoshi Kawaguchi; Takehiko Tsukamoto; Hiroya Andoh; Masahito Yamaguchi; Kazumasa Hiramatsu; Nobuhiko Sawaki

Archive | 1998

Element auf Basis von GaN mit niedriger Versetzungsdichte, seine Verwendung und Herstellungsverfahren

Kazumasa Hiramatsu; Tadatomo C; O Itami Factory Kazuyuki; Keiji c; o Itami Factory Miyashita; Youichiro c; o Itami Factory Ohuchi; Hiroaki c; o Itami Factory Okagawa; Nobuhiko Sawaki; Takumi Shibata; Katsunori Yahashi

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