Nobuhito Inami

Fast magnetization precession observed in L10-FePt epitaxial thin film

Fast magnetization precession is observed in L10-FePt alloy epitaxial thin films excited and detected by all-optical means. The precession frequency varies from 45 to 65 GHz depending on the applied magnetic field strength and direction, which can be explained by a uniform precession model taking account of first- and second-order uniaxial magnetic anisotropy. The lowest effective Gilbert damping constant has a minimum value of 0.055, which is about half that in Co/Pt multilayers and is comparable to Ni/Co multilayers with perpendicular magnetic anisotropy.

Synthesis-condition dependence of carbon nanotube growth by alcohol catalytic chemical vapor deposition method

Abstract We report the dependence of growth yield of single-walled carbon nanotubes (SWNTs) on heat-treatment time and catalyst film thickness by the alcohol catalytic chemical vapor deposition method. Three types of heat-treatment, synthesis of 30 min, synthesis of 30 min after annealing of 30 min, and synthesis of 60 min, were investigated. Thickness of Co catalyst film was varied from 1 to 10 nm. In the case of thinner Co film less than 3 nm, long synthesis time of 60 min is favorable for the effective SWNT growth, because of the small amount of Co catalyst. In the case of thicker Co film more than 3 nm, an amount of grown SWNTs by 30 min synthesis after 30 min annealing and by 60 min synthesis was much higher than that by 30 min synthesis without annealing, showing that total heat-treatment time of 60 min is important for the SWNT growth. Results suggest that the conversion from the thicker film of Co to nano-particle which acts as catalyst takes place during the first 30 min.

Fabrication of spintronics device by direct synthesis of single-walled carbon nanotubes from ferromagnetic electrodes

Abstract We describe an alternative method for realizing a carbon nanotube spin field-effect transistor device by the direct synthesis of single-walled carbon nanotubes (SWNTs) on substrates by alcohol catalytic chemical vapor deposition. We observed hysteretic magnetoresistance (MR) at low temperatures due to spin-dependent transport. In these devices, the maximum ratio in resistance variation of MR was found to be 1.8%.

Observation of Precessional Magnetization Dynamics in L10-FePt Thin Films with Different L10 Order Parameter Values

Fast magnetization precession was observed in L10-FePt thin films with different L10 order parameter values by all optical pump–probe technique. Precession frequency was varied widely for the films with different order parameter, which is due to large difference in perpendicular magnetic anisotropy. Gilbert damping constant (α) was estimated from relaxation time as apparent damping. Clear difference in α was not observed with different perpendicular magnetic anisotropy.

Electrical detection of millimeter-waves by magnetic tunnel junctions using perpendicular magnetized L10-FePd free layer.

Spin dynamics excited by spin-polarized current in magnetic tunnel junctions (MTJs) is potentially useful in nanoscale electrical oscillation sources and detection devices. A spin oscillator/detector should work at a high frequency, such as that of a millimeter-wave, where the quality of a semiconductor device is restricted by carrier mobility, the CR time constant, and so on. Developers of spin systems for practical use need to find out how to excite spin dynamics (i) in the millimeter-wave region, (ii) with low power consumption (ex: no external magnetic field, low damping material), and (iii) for broad frequency modulation. Here L10-ordered FePd alloy with perpendicular magnetocrystalline anisotropy (PMA) and a low damping constant, 0.007, was used for the free layer in the MTJs, and a homodyne-detected ferromagnetic resonance (FMR) signal was obtained at around 30 GHz together with the possibility of one-octave frequency modulation. The FMR signal in out-of-plane magnetized L10-ordered FePd free layer could be excited without an external magnetic field by injecting in-plane spin polarized alternating current. This study shows the potential utility of L10-ordered alloy materials such as FePt, CoPt, MnAl, and MnGa in a variety of millimeter-wave spin devices.

Design and performance of a compact scanning transmission X-ray microscope at the Photon Factory

We present a new compact instrument designed for scanning transmission X-ray microscopy. It has piezo-driven linear stages, making it small and light. Optical components from the virtual source point to the detector are located on a single optical table, resulting in a portable instrument that can be operated at a general-purpose spectroscopy beamline without requiring any major reconstruction. Careful consideration has been given to solving the vibration problem common to high-resolution microscopy, so as not to affect the spatial resolution determined by the Fresnel zone plate. Results on bacteriogenic iron oxides, single particle aerosols, and rare-earth permanent magnets are presented as examples of its performance under diverse applications.

Fabrication of perpendicularly magnetized magnetic tunnel junctions with L10-CoPt/Co2MnSi hybrid electrode

Magnetic tunnel junctions (MTJs) of perpendicularly magnetized L10-CoPt/Co2MnSi/MgO/FePt structure were fabricated. In-plane x-ray diffraction measurements and element specific evaluation of magnetic properties using soft x-ray magnetic circular dichroism were carried out to examine quite thin Co2MnSi (CMS) inserted layer between CoPt and MgO interface. Ordered B2-CMS was successfully fabricated onto L10-CoPt as thin as 1 nm thick, and CMS layer shows perpendicular magnetic anisotropy below 3 nm thick via exchange coupling with CoPt layer. In the MTJ-stacking, epitaxial growth was confirmed except for partial misalignment in the upper FePt layer, and coercive field difference clearly appeared between the bottom and the top ferromagnetic electrodes.

Enhanced orbital magnetic moments in magnetic heterostructures with interface perpendicular magnetic anisotropy.

We have studied the magnetic layer thickness dependence of the orbital magnetic moment in magnetic heterostructures to identify contributions from interfaces. Three different heterostructures, Ta/CoFeB/MgO, Pt/Co/AlOx and Pt/Co/Pt, which possess significant interface contribution to the perpendicular magnetic anisotropy, are studied as model systems. X-ray magnetic circular dichroism spectroscopy is used to evaluate the relative orbital moment, i.e. the ratio of the orbital to spin moments, of the magnetic elements constituting the heterostructures. We find that the relative orbital moment of Co in Pt/Co/Pt remains constant against its thickness whereas the moment increases with decreasing Co layer thickness for Pt/Co/AlOx, suggesting that a non-zero interface orbital moment exists for the latter system. For Ta/CoFeB/MgO, a non-zero interface orbital moment is found only for Fe. X-ray absorption spectra shows that a particular oxidized Co state in Pt/Co/AlOx, absent in other heterosturctures, may give rise to the interface orbital moment in this system. These results show element specific contributions to the interface orbital magnetic moments in ultrathin magnetic heterostructures.

Molecular mixing in donor and acceptor domains as investigated by scanning transmission X-ray microscopy

The nanolevel molecular structure of a bulk heterojunction (BHJ) with a donor (D) polymer and acceptor (A) fullerene derivative is indispensable for true comprehension of highly efficient organic photovoltaic devices. Here, we performed scanning transmission X-ray microscopy of a poly(9,9-dioctylfluorene-co-bithiophene) (F8T2)/[6,6]-phenyl C71-butyric acid methyl ester (PC71BM) blend film with periodic nanostructure. The spatially resolved carbon K-edge absorption spectra revealed that the nanostructure consists of two types of domains with considerable molecular mixing. The fullerene mass fraction is 71 ± 1 and 33 ± 2 wt % for the PC71BM- and F8T2-rich domains, respectively.

Device characteristics of carbon nanotube transistor fabricated by direct growth method

We have fabricated carbon nanotube (CNT) field-effect transistors (FETs) by direct growth of single-wall CNTs between the source and drain electrodes, and investigated their device characteristics. The FETs show ambipolar operation. The temperature and bias voltage dependence of device characteristics are consistent with device operation of the Schottky-type FET. The carrier injection barrier heights for both the electron and hole carriers show small values of 17–74meV, without any additional specific treatment after device fabrication.