Nobuyoshi Yamada

Electronic structures of B 2p and C 2p levels in boron-doped diamond films studied using soft x-ray absorption and emission spectroscopy

X-ray absorption (XAS) and emission (XES) spectroscopy near B K and C K edges have been performed on metallic (

Holes in the Valence Band of Superconducting Boron-Doped Diamond Film Studied by Soft X-ray Absorption and Emission Spectroscopy

ensuremath{sim}0.1phantom{rule{0.3em}{0ex}}mathrm{at.}phantom{rule{0.2em}{0ex}}%

Soft x-ray spectroscopy experiments on the near K-edge of B in MB2(M=Mg, Al, Ta, and Nb)

B, B-diamond) and semiconducting (

Superconducting properties of (Y1−xPrx)Ba2Cu4O8 compounds

ensuremath{sim}0.03phantom{rule{0.3em}{0ex}}mathrm{at.}phantom{rule{0.2em}{0ex}}%

Effect of Pr substitution on superconductivity in (PrxY1−x)Ba2Cu4O8

B and N, BN-diamond) doped diamond films. Both B K XAS and XES spectra show a metallic partial density of states (PDOS) with the Fermi energy of

Magnetic properties of ϵ-Mn3Ge

185.3phantom{rule{0.3em}{0ex}}mathrm{eV}

Resonance photoemission of LaCoO3(111) and La0.9Sr0.1CoO3(111)

, and there is no apparent boron-concentration dependence in contrast to the different electric property. In C K XAS spectrum of B-diamond, the impurity state ascribed to boron is clearly observed near the Fermi level. The Fermi energy is found to be almost same with the top of the valence band of nondoped diamond:

Electronic structure of B 2 p σ and p π states in MgB 2 , AlB 2 , and ZrB 2 single crystals

{E}_{V}=283.9phantom{rule{0.3em}{0ex}}mathrm{eV}

Nuclear spin-spin coupling in La 2 − x Sr x CuO 4 studied by stimulated echo decay

. C K XAS of BN-diamond shows both the B-induced shallow level and N-induced deep and broad levels as the in-gap states, in which the shallow level is in good agreement with the activation energy

Magnetic and X-ray studies of ξ-Mn2.6Ge

({E}_{a}=0.37phantom{rule{0.3em}{0ex}}mathrm{eV})